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    LOW LEVEL RF AMPLIFIER CIRCUIT Search Results

    LOW LEVEL RF AMPLIFIER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    LOW LEVEL RF AMPLIFIER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematics for a PA amplifier

    Abstract: MAX2242 APP3249 DECT schematic AN3249
    Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DECT, Power Amplifier, PA, 1.9GHz, 1905MHz, 1905 MHz, DECT PA, DECT power amplifier May 27, 2004 APPLICATION NOTE 3249 1.9GHz DECT Power Amplifier Delivers +27dBm from 3.6V at 41% PAE The MAX2242 is an ultra-low cost silicon bipolar power amplifier PA with integrated bias-circuitry, logic-level


    Original     		PDF 1905MHz, 27dBm MAX2242 29dBm schematics for a PA amplifier APP3249 DECT schematic AN3249

    PCB Rogers RO4003 substrate

    Abstract: No abstract text available
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN PCB Rogers RO4003 substrate

    VMMK-2403

    Abstract: No abstract text available
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN

    VMMK-2403

    Abstract: A004R RO4350 VMMK-2403-TR1G
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN A004R RO4350 VMMK-2403-TR1G

    Untitled

    Abstract: No abstract text available
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN

    Untitled

    Abstract: No abstract text available
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN

    Untitled

    Abstract: No abstract text available
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN

    VMMK-2403

    Abstract: 24GHz Radar USL00 WLP0402 AN-5378
    Text: VMMK-2403 2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2403 is an easy-to-use, high linearity low noise amplifier in a miniaturized wafer level package WLP . The low noise and unconditionally stable performance makes this amplifier ideal as a primary or subsequent gain block of an RF receiver in applications from


    Original     		PDF VMMK-2403 VMMK-2403 100mm 250mm. AV02-2003EN 24GHz Radar USL00 WLP0402 AN-5378

    MACOM MMIC RF AMP

    Abstract: 16xY MD57-0001 MD57-0001SMB MD57-0001TR L2 sot26
    Text: Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8-1.0 GHz MD57-0001 MD57-0001 Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz Features • • • SOT-26 -5 to +5 dBm LO Drive Level High Isolation, 28 dB LO to RF Inexpensive SOT-26 Package


    Original     		PDF MD57-0001 OT-26 OT-26 MD57-0001 MD57-0001SMB AV10328 MACOM MMIC RF AMP 16xY MD57-0001TR L2 sot26

    Untitled

    Abstract: No abstract text available
    Text: Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2


    Original     		PDF MSG43004

    MSG43004

    Abstract: 5.5 GHz power amplifier
    Text: Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2


    Original     		PDF MSG43004 MSG43004 5.5 GHz power amplifier

    12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: rf power detector circuit diagram HEAT DETECTOR DIAGRAM integrated video detector 38MHZ 150 150w audio amplifier circuit 400HZ DIP-14H PC1366 fm modulation application circuit
    Text: PC1366 LINEAR INTEGRATED CIRCUIT B/W TV VIF PROCESSING CIRCUIT DESCRIPTION Contek PC1366 is designed for B/W TV VIF processing purpose. It includes VIF amplifier video low level detector RF AGC, IF AGC and noise reduction circuit. FEATURES *High input sensitivity Typ.30dB m.


    Original     		PDF PC1366 PC1366 DIP-14H 38MHz 38MHz 400MHz 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM rf power detector circuit diagram HEAT DETECTOR DIAGRAM integrated video detector 150 150w audio amplifier circuit 400HZ DIP-14H fm modulation application circuit

    PC1366

    Abstract: HEAT DETECTOR DIAGRAM 400HZ DIP-14H fm modulation application circuit rf power detector circuit diagram integrated video detector 38MHZ circuit diagram of fm
    Text: UTC PC1366 LINEAR INTEGRATED CIRCUIT B/W TV VIF PROCESSING CIRCUIT DESCRIPTION UTC PC1366 is designed for B/W TV VIF processing purpose. It includes VIF amplifier，video low level detector RF AGC, IF AGC and noise reduction circuit. FEATURES *High input sensitivity Typ.30dBµ.


    Original     		PDF PC1366 DIP-14H 38MHz 400MHz 38MHz HEAT DETECTOR DIAGRAM 400HZ DIP-14H fm modulation application circuit rf power detector circuit diagram integrated video detector circuit diagram of fm

    400HZ

    Abstract: DIP-14H PC1366 integrated video detector
    Text: UTC PC1366 LINEAR INTEGRATED CIRCUIT B/W TV VIF PROCESSING CIRCUIT DESCRIPTION UTC PC1366 is designed for B/W TV VIF processing purpose. It includes VIF amplifier，video low level detector RF AGC, IF AGC and noise reduction circuit. FEATURES *High input sensitivity Typ.30dBµ.


    Original     		PDF PC1366 DIP-14H QW-R111-003 400HZ DIP-14H integrated video detector

    M513

    Abstract: MD57-0001 MD57-0001SMB MD57-0001TR RF mixer oscillator 20 mhz
    Text: Low Cost MMIC Mixer with Local Oscillator Amplifier 0.8 GHz - 1.0 GHz Features MD57-0001 V3 Functional Schematic • -5 to +5 dBm LO Drive Level • High Isolation, 28 dB LO to RF • SOT-26 package Description The MD57-0001 is a floating FET mixer with an onchip LO amplifier. The LO drive for the MD57-0001


    Original     		PDF MD57-0001 OT-26 MD57-0001 MD570001 ampli15 M513 MD57-0001SMB MD57-0001TR RF mixer oscillator 20 mhz

    MSG43004

    Abstract: 5.5 GHz power amplifier
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages


    Original     		PDF 2002/95/EC) MSG43004 MSG43004 5.5 GHz power amplifier

    M513

    Abstract: MD57-0001 MD57-0001SMB MD57-0001TR
    Text: MD57-0001 Low Cost MMIC Mixer with Local Oscillator Amplifier 0.8 - 1.0 GHz Features Rev. V3 Functional Schematic • -5 to +5 dBm LO Drive Level • High Isolation, 28 dB LO to RF • SOT-26 package Description The MD57-0001 is a floating FET mixer with an onchip LO amplifier. The LO drive for the MD57-0001


    Original     		PDF MD57-0001 OT-26 MD57-0001 M513 MD57-0001SMB MD57-0001TR

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages


    Original     		PDF 2002/95/EC) MSG43004

    M513

    Abstract: MAMX-008611 MAMX-008611-000000 MAMX-008611-TR1000 MAMX-008611-TR3000 MD57-0001
    Text: MAMX-008611 Low Cost MMIC Mixer with Local Oscillator Amplifier 0.8 - 1.0 GHz Features • • • • • • • Rev. V1 Functional Schematic -5 to +5 dBm LO Drive Level High Isolation, 28 dB LO to RF Lead Free SOT-26 package 100% Matte Tin Plating over Copper


    Original     		PDF MAMX-008611 OT-26 MD57-0001 MAMX-008611 MAMX008611 M513 MAMX-008611-000000 MAMX-008611-TR1000 MAMX-008611-TR3000 MD57-0001

    M513

    Abstract: MAMX-008611 MAMX-008611-000000 MAMX-008611-TR1000 MAMX-008611-TR3000 MD57-0001 900 mhz oscillator
    Text: RoHS Compliant Low Cost MMIC Mixer with Local Oscillator Amplifier 0.8 GHz - 1.0 GHz Functional Schematic Features • • • • • • • MAMX-008611 V1 -5 to +5 dBm LO Drive Level High Isolation, 28 dB LO to RF Lead Free SOT-26 package 100% Matte Tin Plating over Copper


    Original     		PDF MAMX-008611 OT-26 MD57-0001 MAMX-008611 MAMX008611 fre15 M513 MAMX-008611-000000 MAMX-008611-TR1000 MAMX-008611-TR3000 MD57-0001 900 mhz oscillator

    A01 MMIC

    Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
    Text: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level


    Original     		PDF BFP420, CMY91 BFP183W 10dBm A01 MMIC siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm

    Untitled

    Abstract: No abstract text available
    Text: AM204437WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.


    Original     		PDF AM204437WM-BM-R AM204437WM-BM-R 37dBm 50-ohm 1800mA, 10mils 100mA, 300mA 1400mA

    n-channel enhancement mode vmos power fet

    Abstract: DV1201K
    Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications


    OCR Scan     		PDF DV1201K DV1201K n-channel enhancement mode vmos power fet

    L0730

    Abstract: 8087 architecture and configuration MFL0
    Text: MD57-0001 M/A-COM Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 G H z-1 .0 GHz Features • • • yMâCGM Æ R F & Microwave Products SOT-26 -5 to +5 dBm LO Drive Level High Isolation, 28 dB LO to RF Inexpensive SOT-26 Package 2 ,9 ± 0 ,2 .075 ± .00 8


    OCR Scan     		PDF MD57-0001 OT-26 OT-26 MD57-0001 MD57-0001SMB L0730 8087 architecture and configuration MFL0