Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN Search Results

    LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2193

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA2193 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION ISAHAYA 2SA2193 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage amplify application.


    Original     		PDF 2SA2193 2SA2193 -50mA SC-70

    2SC5395

    Abstract: 2sc53
    Text: 〈transistor〉 2SC5395 For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro（Frame type） DESCRIPTION 2SC5395 is a silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. OUTLINE DRAWING


    Original     		PDF 2SC5395 2SC5395 2sc53

    isahaya

    Abstract: RT1A3906
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 RT1A3906 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING ISAHAYA RT1A3906 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage amplify application.


    Original     		PDF RT1A3906 RT1A3906 -50mA isahaya

    2SC5814

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application.


    Original     		PDF 2SC5814 2SC5814 JEITASC-59 O-236

    2SC3052

    Abstract: transistor 2sc3052 2sc3052 if
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.


    Original     		PDF 2SC3052 2SC3052 100mA JEITASC-59 O-236 transistor 2sc3052 2sc3052 if

    2SC5625

    Abstract: isahaya
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5625 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, 2.5 It is designed for low frequency voltage application.


    Original     		PDF 2SC5625 2SC5625 SC-59 isahaya

    2sc3928

    Abstract: 2SC3928 equivalent
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3928 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3928 is a super mini package resin sealed silicon NPN epitaxial transistor, 2.5 It is designed for low frequency voltage application.


    Original     		PDF 2SC3928 2SC3928 JEITASC-59 2SC3928 equivalent

    2SC3928A

    Abstract: isahaya
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3928A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3928A is a super mini package resin sealed silicon NPN epitaxial transistor, 2.5 It is designed for low frequency voltage application.


    Original     		PDF 2SC3928A 2SC3928A JEITASC-59 isahaya

    2SC4154

    Abstract: ISA1602AM1
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC4154 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.


    Original     		PDF 2SC4154 2SC4154 ISA1602AM1. 100mA JEITASC-70 ISA1602AM1

    2SC5974A

    Abstract: MUTING AND SWITCHING APPLICATION
    Text: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5974A 2SC5974A MUTING AND SWITCHING APPLICATION

    2SC5996

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5996 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Unit : mm OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5996 2SC5996 SC-70

    2SC5383

    Abstract: 2SC538 ultra low noise NPN transistor
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Ultra super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.


    Original     		PDF 2SC5383 2SC5383 100mA JEITASC-75A 2SC538 ultra low noise NPN transistor

    2SC4155

    Abstract: TYPE 270
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC4155 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC4155 is a super mini package resin sealed silicon NPN epitaxial transistor, 2.1 It is designed for low frequency voltage application.


    Original     		PDF 2SC4155 2SC4155 JEITASC-70 TYPE 270

    2SC4155A

    Abstract: isahaya
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC4155A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Super mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC4155A is a super mini package resin sealed silicon NPN epitaxial transistor, 2.1 It is designed for low frequency voltage application.


    Original     		PDF 2SC4155A 2SC4155A JEITASC-70 isahaya

    2sc2320

    Abstract: TRANSISTOR 2sc2320 2SC2320/L
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPfTAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.


    OCR Scan     		PDF 2SC2320 2SC2320 100mA, SC-43 270Hz X10-3 TRANSISTOR 2sc2320 2SC2320/L

    2SC3928

    Abstract: mitsubishi marking
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3928 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3928 is a super mini package silicon NPN epitaxial type OUTLINE DRAWING transistor. It Is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC3928 2SC3928 2SA1530. mitsubishi marking

    2SC2603

    Abstract: 2SC2603 F 2SC2603 E transistor 2sc2603 2SC2603 G cl 100 hie hre hfe
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC2603 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2603 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING 4.3M A X frequency voltage amplify application. Small package for easy mounting.


    OCR Scan     		PDF 2SC2603 2SC2603 100mA f-270Hz 270Hz 2SC2603 F 2SC2603 E transistor 2sc2603 2SC2603 G cl 100 hie hre hfe

    2SC4266

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.


    OCR Scan     		PDF 2SC4266 2SC4266 2SA1630.

    D425 transistor

    Abstract: TRANSISTOR D425 D425 2SA1602 rfft 2SC4154 X10-3 MARKING HRA j506
    Text: SMALL-SIGNAL TRANSISTOR 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING Unit: mm 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC4154 2SC4154 2SA1602. 100mA, SC-70 270Hz 270Hz X10-3 D425 transistor TRANSISTOR D425 D425 2SA1602 rfft X10-3 MARKING HRA j506

    2sc4155

    Abstract: 2SA1603
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC4155 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4155 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING 2.1 ± 0.2 type transistor. It is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC4155 2SC4155 2SA1603. SC-70 2SA1603

    CL1501

    Abstract: 2SC4154
    Text: M ITSUBISHI SEMICONDUCTOR <SM ALL-SIGNAL TRANSISTO R 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING type transistor. It is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC4154 2SC4154 2SA1602. 100mA, SC-70 270Hz X10-3 CL1501

    2SC1310

    Abstract: transistor 5104 db CC103 2cC103
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.


    OCR Scan     		PDF 2SC1310 2SC1310 150mV 100mA, 270Hz 30kHz transistor 5104 db CC103 2cC103

    2SC1708

    Abstract: 2SC170 2SC1708A
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX


    OCR Scan     		PDF 2SC1708A 2SC1708A 150MHz 270Hz X10-3 2SC1708 2SC170

    2SC2320L

    Abstract: h a 431 transistor RO10K
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX


    OCR Scan     		PDF 2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K