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    LOW COLLECTOR-EMITTER SATURATION VOLTAGE Search Results

    LOW COLLECTOR-EMITTER SATURATION VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    LOW COLLECTOR-EMITTER SATURATION VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSD1221 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB906 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    Original     		PDF KSD1221 KSB906

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    Original     		PDF KSD1406 KSB1015 O-220F

    KSE200

    Abstract: KSE210 kse21
    Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 IC= -100 Complement to KSE200 ˆ{ TO-126 ~ ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage


    Original     		PDF KSE210 KSE200 O-126 500mA 500mA, 200mA 100mA, 10MHz KSE200 KSE210 kse21

    FJC1386

    Abstract: FJC2098
    Text: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF FJC1386 FJC2098 OT-89 FJC1386 FJC2098

    FJC1386

    Abstract: FJC2098
    Text: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF FJC1386 FJC2098 OT-89 FJC1386 FJC2098

    Untitled

    Abstract: No abstract text available
    Text: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF FJC1386 FJC2098 OT-89 FJC1386PTF FJC1386QTF FJC1386RTF OT-89

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1745 Features Very small-sized package. Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage


    Original     		PDF 2SA1745 -200mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC1386 FJC2098 OT-89 FJC1386

    FJC1386

    Abstract: FJC2098 SOT89 transistor marking 4A
    Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC1386 FJC2098 OT-89 FJC1386 FJC2098 SOT89 transistor marking 4A

    Untitled

    Abstract: No abstract text available
    Text: DSS4140U N EW PRODU CT LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Low Collector-Emitter Saturation Voltage, VCE(SAT) Complementary PNP Type Available (DSS5140U)


    Original     		PDF DSS4140U DSS5140U) OT-323 J-STD-020D MIL-STD-202, DS31689

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1980UF Features Low collector saturation voltage. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage


    Original     		PDF 2SA1980UF -100mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1820 Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage


    Original     		PDF 2SD1820

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1820A Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage


    Original     		PDF 2SD1820A

    KSC5019

    Abstract: No abstract text available
    Text: KSC5019 NPN EPITAXIAL SILICON TRANSISTOR LOW SATURATION • VCE sat =0.5V (IC=2A, IB=50mA) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)


    Original     		PDF KSC5019 PW10ms, Cycle30% KSC5019

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS * Telephone switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2500 MEDIUM POWER AMPLIFIER LOW SATURATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)


    OCR Scan     		PDF KSC2500 GGS477S

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220F • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    OCR Scan     		PDF KSD1406 KSB1015 O-220F

    Untitled

    Abstract: No abstract text available
    Text: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTO R EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Symbol Rating


    OCR Scan     		PDF KSC5047

    Untitled

    Abstract: No abstract text available
    Text: KSA1241 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Vfoltage • Complement to KSC3076 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol J Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    OCR Scan     		PDF KSA1241 KSC3076 --30V

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC5019 LOW SATURATION • VCE sat =0.5V (lc=2A, lB=50mA) ABSOLUTE MAXIMUM RATINGS (TA=25t:) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)


    OCR Scan     		PDF KSC5019

    Untitled

    Abstract: No abstract text available
    Text: KSE210 PNP EPITAXIAL SILICO N TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65ffiz @ lc= -IOO1A TO-126 Complement to K SE200 A BSO LU TE MAXIMUM RATINGS Rating


    OCR Scan     		PDF KSE210 65ffiz SE200 O-126 10MHz 100mA,

    Untitled

    Abstract: No abstract text available
    Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 60 V Collector Emitter Voltage


    OCR Scan     		PDF KSD1406 KSB1015

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSP94 MPSA44