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    LOW BARRIER SCHOTTKY Search Results

    LOW BARRIER SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    LOW BARRIER SCHOTTKY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 867 FEATURES INCLUDE: • Low Barrier • Excellent Matching


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    DMF-3070 PDF

    DUAL DIODE

    Abstract: No abstract text available
    Text: 5082-2279 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching


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    PDF

    DMF-3070

    Abstract: No abstract text available
    Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching


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    DMF-3070 DMF-3070 PDF

    BYV133

    Abstract: BYV133F
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV133F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and


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    BYV133F OT186 BYV133 PDF

    PBYR1045

    Abstract: PBYR1045F PBYR2045CTF
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These


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    OT186 PBYR2045CTF PBYR20Repetitive PBYR1045 PBYR1045F PDF

    BYV118

    Abstract: BYV118F PBYR645CT
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV118F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack plastic envelope featuring low forward voltage drop and


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    BYV118F OT186 BYV118 PBYR645CT PDF

    BYV143

    Abstract: BYV143F PBYR745
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION BYV143F series QUICK REFERENCE DATA Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and


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    BYV143F OT186 BYV143 PBYR745 PDF

    DIODE 1439

    Abstract: PBYR745 PBYR745F PBYR1545CTF 1439 diode
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These


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    OT186 PBYR1545CTF PBYR15FRepetitive DIODE 1439 PBYR745 PBYR745F 1439 diode PDF

    45PTF

    Abstract: 109 DIODE PBYR1645 PBYR1645F PBYR3045PTF pbyr3045
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These


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    OT199 PBYR3045PTF PBYR30Repetitive 45PTF 109 DIODE PBYR1645 PBYR1645F pbyr3045 PDF

    PBYR1645

    Abstract: PBYR3045PTF PBYR1645F
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These


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    OT199 PBYR3045PTF PBYR30Repetitive PBYR1645 PBYR1645F PDF

    PBYR1645

    Abstract: PBYR1645F PBYR2545CTF FULL WAVE RECTIFIER CIRCUITS
    Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These


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    OT186 PBYR2545CTF PBYR25Repetitive PBYR1645 PBYR1645F FULL WAVE RECTIFIER CIRCUITS PDF

    MPEN-230AF

    Abstract: sanken sanken power transistor CF35
    Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    MPEN-230AF Package---TO-262 100Vguarantee D01-006EA-051202 MPEN-230AF sanken sanken power transistor CF35 PDF

    diode B105

    Abstract: Sanken catalogue MPEN-230AF
    Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    MPEN-230AF Package---TO-262 100Vguarantee D01-006EA-051202 diode B105 Sanken catalogue MPEN-230AF PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    MPEN-230AF Package---TO-262 100Vguarantee 0E-01 0E-02 0E-03 D01-006EA-051202 PDF

    schematic diagram UPS

    Abstract: SanRex BKR400AB10 SanRex ups schematic diode schottky 200A diode schottky 400A power supply 100v 30a schematic UPS design BKR400AB10 SCHOTTKY RECTIFIER 400A
    Text: SanRex Schottky Barrier Diode BKR400AB10 IO AV = 400A, VRRM=100V, VFM=0.68V SanRex outstanding metal barrier technology allows BKR400AB10 Schottky Barrier Diode Module to feature a very low forward voltage drop. This device also has low leakage current, low thermal resistance and improved avalanche energy


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    BKR400AB10 BKR400AB10 O-244 BKR400AB BKR400AC schematic diagram UPS SanRex BKR400AB10 SanRex ups schematic diode schottky 200A diode schottky 400A power supply 100v 30a schematic UPS design SCHOTTKY RECTIFIER 400A PDF

    RB080L-30

    Abstract: Rohm Schottky Barrier Diodes
    Text: RB080L-30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. 1 Schottky Barrier Diodes RB080L-30 [ Product description ] Outline ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics.


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    RB080L-30 60Hz/1cyc barrier/rb080l-30/print RB080L-30 Rohm Schottky Barrier Diodes PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


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    2SB139100MA 2SB139100MA 002mA@ 390mm; 295mm; PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


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    2SB267100MA 2SB267100MA 002mA PDF

    FME-210B

    Abstract: sanken CF35 Sanken catalog
    Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


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    FME-210B Package---TO220F FME-210B 150Vguarantee D01-012EA-070322 sanken CF35 Sanken catalog PDF

    sanken power transistor

    Abstract: SJPB-D4
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D4B is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters


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    PDF

    sanken power transistor

    Abstract: for rectifier
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D6 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters


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    PDF

    SANKEN

    Abstract: sanken power transistor
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-L3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-L3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters


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    0E-01 0E-02 0E-03 SANKEN sanken power transistor PDF

    sanken power transistor

    Abstract: "Sanken Electric"
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D9 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D9 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters


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    PDF

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


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    FMEN-220A Package---TO220F FMEN-220A 0E-01 D01-010EA-060310 sanken power transistor CF35 sanken DSA0016518 Sanken catalog "Sanken Rectifiers" PDF