Untitled
Abstract: No abstract text available
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA2118Z
850MHz
SPA2118Z
MCR03
ECB-101161
DS110720
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA1118Z
850MHz
850MHz
SPA1118Z
MCH18
100nH,
1008HQ
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA1118Z
850MHz
850MHz
SPA1118Z
MCH18
100nH,
1008HQ
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Untitled
Abstract: No abstract text available
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA2118Z
850MHz
SPA2118Z
MCR03
ECB-101161
DS121024
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1watt wireless amplifier schematic
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA1118Z
850MHz
SPA1118Z
100nH,
MCH18
106K020R
1watt wireless amplifier schematic
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Untitled
Abstract: No abstract text available
Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction
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SXA-3318B
400MHz
2500MHz
MCH18
MCR100J
1960MHz
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a3bz
Abstract: No abstract text available
Text: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
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SXA389BZ
400MHz
2500MHz
OT-89
SXA389BZ
OT-89
ECB-101499
a3bz
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a3bz
Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Text: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
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SXA389BZ
400MHz
2500MHz
SXA389BZ
OT-89
DS110610
a3bz
SXA-389BZ
Sirenza amplifier SOT-89 Marking
1485C
trace code marking RFMD
lot code RFMD
SXA389BZSQ
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transistor 1p3
Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology
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SXA-3318B
400MHz
2500MHz
SXA-3318B
28dBm
AM03M
transistor 1p3
SXA3318B
SXA3318BZ
sirenza rfmd
AH03L
MCH18
TAJB104KLRH
TAJB106K020R
L350
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transistor 1p3
Abstract: No abstract text available
Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction
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SXA-3318B
400MHz
2500MHz
AM03M
MCR100J
transistor 1p3
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Untitled
Abstract: No abstract text available
Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic
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SPA2118Z
850MHz
SPA2118Z
LL1608-FS
1008HQ
MCR03
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high power amp 100mhz 1w
Abstract: CGA-3318 CGA3318 CGA3318Z CGA-3318Z ETC1-1-13 SOIC-08
Text: CGA-3318 Z CGA-3318(Z) Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s CGA-3318(Z) is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318
EDS-101993
CGA3318
CGA3318Z
CGA-3318Z
CGA-3318
high power amp 100mhz 1w
CGA3318
CGA3318Z
CGA-3318Z
ETC1-1-13
SOIC-08
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marking code macom
Abstract: macom marking MAcom device marking marking macom ETC1-1T Macom marking code HEMT marking P CGA-3318
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318Z
CGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
CGA3318ZSR
marking code macom
macom marking
MAcom device marking
marking macom
ETC1-1T
Macom marking code
HEMT marking P
CGA-3318
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CGA3318ZSR
Abstract: CGA-3318
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318Z
CGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
25pcs
CGA3318ZSR
CGA3318ZSR
CGA-3318
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CGA-3318
Abstract: CGA3318Z CGA3318 CGA-3318Z CGA3318ZSB ETC1-1-13 SOIC-08 macom rf amp Macom marking code marking code macom
Text: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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CGA-3318Z
CGA-3318Z
CGA3318
CGA3318Z
CGA3318ZSB
CGA3318ZSQ
25pcs
CGA3318ZSR
CGA-3318
CGA3318Z
CGA3318
CGA3318ZSB
ETC1-1-13
SOIC-08
macom rf amp
Macom marking code
marking code macom
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XA3Z
Abstract: No abstract text available
Text: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
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SXA-389
400MHz
2500MHz
OT-89
400MHz
to2500MHz
XA3Z
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SZA6044Z
Abstract: HEMT marking P 24 lead plastic qfn 4mmX4mm
Text: SZA-6044 SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
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SZA-6044
SZA-6044
DS110714
SZA-6044"
SZA6044ZSQ
SZA6044ZSR
SZA6044Z
SZA6044ZPCK-EVB1
SZA6044Z
HEMT marking P
24 lead plastic qfn 4mmX4mm
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25c2625
Abstract: ECB-101161 267M3502104
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
DS121024
25c2625
ECB-101161
267M3502104
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
the-9421
DS110720
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xa3b
Abstract: No abstract text available
Text: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features
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SXA-389B
400MHz
2500MHz
OT-89
OT-89
ECB-101499
xa3b
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
SPA2318ZSQ
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InP transistor HEMT
Abstract: sxa389z XA3Z MCH18 SXA-389 SXA-389B SXA-389Z
Text: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
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SXA-389
400MHz
2500MHz
OT-89
400MHz
to2500MHz
InP transistor HEMT
sxa389z
XA3Z
MCH18
SXA-389B
SXA-389Z
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a3bz
Abstract: MMIC SXA 389Bz marking MCH18 SXA-389B trace code marking RFMD EL115
Text: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic
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SXA-389B
400MHz
2500MHz
OT-89
OT-89
ECB-101499
a3bz
MMIC SXA 389Bz marking
MCH18
trace code marking RFMD
EL115
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a3bz
Abstract: SXA-389B Sirenza amplifier SOT-89 MMIC SOT 89 marking CODE c4 MCH18 267M3502104 marking c7 sot-89 marking code sirenza SXA-389BZSQ EL115
Text: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic
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SXA-389B
400MHz
2500MHz
OT-89
DS100712
a3bz
Sirenza amplifier SOT-89
MMIC SOT 89 marking CODE c4
MCH18
267M3502104
marking c7 sot-89
marking code sirenza
SXA-389BZSQ
EL115
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