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    LOT CODE NE NEC Search Results

    LOT CODE NE NEC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy

    LOT CODE NE NEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA1118Z 850MHz 850MHz SPA1118Z MCH18 100nH, 1008HQ

    Untitled

    Abstract: No abstract text available
    Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias


    Original     		PDF SPA1118Z 850MHz SPA1118Z 106K020R MCH18

    Untitled

    Abstract: No abstract text available
    Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT


    Original     		PDF SPA1118Z 850MHz SPA1118Z DS111217 ECB-101161

    AT880

    Abstract: lot code RFMD
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias


    Original     		PDF SPA2118Z 850MHz SPA2118Z ECB-101161 DS111219 AT880 lot code RFMD

    Untitled

    Abstract: No abstract text available
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA2118Z 850MHz SPA2118Z LL1608-FS 1008HQ MCR03

    lot code RFMD

    Abstract: ECB-101161
    Text: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT


    Original     		PDF SPA2118Z 850MHz SPA2118Z 950MHz ECB-101161 DS120502 lot code RFMD

    transistor 1p3

    Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
    Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology


    Original     		PDF SXA-3318B 400MHz 2500MHz SXA-3318B 28dBm AM03M transistor 1p3 SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 TAJB104KLRH TAJB106K020R L350

    transistor 1p3

    Abstract: No abstract text available
    Text: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction


    Original     		PDF SXA-3318B 400MHz 2500MHz AM03M MCR100J transistor 1p3

    Untitled

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT


    Original     		PDF SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz SPA2318ZSQ

    an 214 amp schematic diagram

    Abstract: ROHM MCR03 ECB-101161
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz an 214 amp schematic diagram ROHM MCR03 ECB-101161

    ECB-101161

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS111219 ECB-101161

    MC 3041 opto

    Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE


    Original     		PDF MIL-PRF-19500/548D MIL-PRF-19500/548C 4N47A, 4N48A, 4N49A, 4N47U, 4N48U, 4N49U MC 3041 opto 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator

    zt3243

    Abstract: zt3243lfey ZT3243LFEA zt3243l ZT3243F ZT3243FEA ZT3243LFET ZT3241LFEA ZT3243FEY ZT3243E
    Text: ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Zywyn Corporation ZT3241F/ZT3243F Zywyn ZT3241F/ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT


    Original     		PDF ZT3243F 1000kbps RS232 ZT3241F/ZT3243F EIA/TIA-232F EIA/TIA-232 EIA/TIA-562 zt3243 zt3243lfey ZT3243LFEA zt3243l ZT3243FEA ZT3243LFET ZT3241LFEA ZT3243FEY ZT3243E

    zt3243leea

    Abstract: zt3243 ZT3243LEEY zt3243l ZT3243E ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE
    Text: ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Zywyn Corporation ZT3241E/ZT3243E Zywyn ZT3241E/ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT V.28/V.24 Specifications for VCC at +3.3V ±10%


    Original     		PDF ZT3243E 250kbps RS232 ZT3241E/ZT3243E EIA/TIA-232F EIA/TIA-232 EIA/TIA-562 zt3243leea zt3243 ZT3243LEEY zt3243l ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE

    Untitled

    Abstract: No abstract text available
    Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V


    Original     		PDF 1SMB2EZ51 DO-214AA, MIL-STD-750, E1A-481)

    Untitled

    Abstract: No abstract text available
    Text: DIE PRODUCTS BURR-BROWN* HI-508 DIE 1 E Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V


    OCR Scan     		PDF HI-508 70Vp-p HI-508KD 12-8mW/â

    LOT CODE NE NEC

    Abstract: No abstract text available
    Text: TERM. NO.’s FOR rri REF. . 2 5 0 MAX. [6.35] ONLY . 3 4 5 MAX. [8.76] ^ 1 .240 MAX. [ 6 . 10 ] DOT L OCATES TERM. LOT #1 CODE & DATE CODE .305 [7.75] AREA REPRESENTS T E R M I N A L PAD DI MENSI ONS .030 6 030(6) [.76] [.76] PRI • .073(4) SEC 5, [1.85]


    OCR Scan     		PDF 1250VDC, 1500VDC 392uH 10kHz, 31096R LOT CODE NE NEC

    8MW1

    Abstract: 8MW1 VDFN marking 1be HI-509 HI-509KD
    Text: DDE PRODUCTS BURR-BROWN* [ HI-509 DIE 1 Differential 4-Channel C M O S ANALO G M ULTIPLEXER DIE FEATURES DESCRIPTION • A N A LO G O V ER VO LT AG E PROTECTION: 70Vp-p • NO C H A N N EL INTERACTION DURING O V ER VO LT AG E • E S D R ESIST A N T • BR EA K -B EF O R E-M A K E SW ITCHING


    OCR Scan     		PDF HI-509 70Vp-p HI-509KD 70Vp-rrent. -28mW 8MW1 8MW1 VDFN marking 1be

    RX2056

    Abstract: No abstract text available
    Text: RX2056 916.5 MHz ASH Receiver Ideal for 916.5 MHz, 3 V Data Receivers in the USA and Canada Passive Design with No RF Oscillation Use with HX2000for 19.2 kbps Data Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint


    OCR Scan     		PDF RX2056 HX2000for RX2056-A-071598

    HI-507

    Abstract: HI-507KD
    Text: DIE PRODUCTS B U R R -B R O W N * [ HI-507 DIE 1 Differential 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING


    OCR Scan     		PDF HI-507 70Vp-p HI-507KD

    hs82c54

    Abstract: No abstract text available
    Text: HS-82C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator A ug ust 1995 Features Pinouts • Radiation Hardened - Total Dose > 10s RAD Si - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption


    OCR Scan     		PDF HS-82C85RH IL-STD-1835 CDIP2-T24 CLK50 82C85 hs82c54

    Untitled

    Abstract: No abstract text available
    Text: RX4700 868.35 MHz ASH Receiver Ideal fo r 868.35 MHz, 3 V D ata Receivers in Europe High-Sensitivity Passive Design with No RF Oscillation Use with H X 4007for2.4 kbps D ata Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint


    OCR Scan     		PDF RX4700 4007for2 RX4700-C-092398

    Untitled

    Abstract: No abstract text available
    Text: RX1300 418.0 MHz ASH Receiver Ideal fo r 418.0 MHz, 3 V D ata Receivers in the UK and the USA High-Sensitivity Passive Design with No RF Oscillation Baseband D ata Rate o f2400 bis Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint


    OCR Scan     		PDF RX1300 f2400 RX1300-A-041798

    HI-508

    Abstract: HI-508KD ad 508 die
    Text: DIE PRODUCTS B U R R -B R O W N * HI-508 DIE 1 [ Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p The HI-508KD die is an 8-channel single-ended analog multiplexer with input overvoltage pro­


    OCR Scan     		PDF HI-508 70Vp-p HI-508KD -28mW ad 508 die