000068H
Abstract: No abstract text available
Text: RapidIO Logical I/O and Transport Layer Interface DS242 (v1.3.1) July 31, 2003 Introduction Product Specification LogiCORE Facts The Xilinx LogiCORE RapidIO™ Logical (I/O) and Transport Layer interface is optimized for Virtex™-II and Virtex-II Pro™ series FPGAs
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DS242
000068H
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timing DIAGRAM OF ROM
Abstract: EEPROM ROM80 c5 rom Shanghai Belling D103 diagram of rom chip
Text: BL7431A 256-Bit EEPROM Logical Encrypted Chip Description Pin Diagram BL7431A is the memory card chip developed by Shanghai Belling Co.,Ltd. The chip uses Shanghai Belling’s 1.2um CMOS & EEPROM process. It has 256 bits EEPROM A type or 512 bits EEPROM(B type) with logical
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BL7431A
256-Bit
timing DIAGRAM OF ROM
EEPROM
ROM80
c5 rom
Shanghai Belling
D103
diagram of rom chip
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entrelec diode
Abstract: Diode BFM diode 4007 DATASHEET din 4007 in 4007 diode 1SNA010134R1700 1SNA020021R1300 diode N 4007 diode 4007 diode in 4007
Text: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners . 15.1 - 15.8 Series 10 000. 15.2
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cd40109
Abstract: CD40109BMS IOH15
Text: CD40109BMS CMOS Quad Low-to-High Voltage Level Shifter December 1992 Features Description • High Voltage Type 20V Rating CD40109BMS contains four low-to-high voltage level shifting circuits. Each circuit will shift a low voltage digital logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS
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CD40109BMS
CD40109BMS
cd40109
IOH15
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sandisk flash controller
Abstract: sandisk sd card geometry toshiba NAND Flash memory controller ecc SANDISK SDHC ULTRA SANDISK SDHC ULTRA class 6 TOSHIBA nand "numbering" flash sandisk SD sandisk 8gb sd card geometry "sd card" 2GB sandisk Nand flash part number
Text: EYE 09 September 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 170 CONTENTS New Products NAND Flash Memory with Logical Address Access Method: LBA-NANDTM.2 Ultra High Speed SD Memory Cards. 2
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32-bit
300mm
sandisk flash controller
sandisk sd card geometry
toshiba NAND Flash memory controller ecc
SANDISK SDHC ULTRA
SANDISK SDHC ULTRA class 6
TOSHIBA nand "numbering" flash
sandisk SD
sandisk 8gb sd card geometry
"sd card" 2GB
sandisk Nand flash part number
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XC5200
Abstract: No abstract text available
Text: Edway Design Systems System Explorer ASIC Explorer XILLAS Concept Composer Verilog FPGA Designer Synergy Design Works TimingDesigner ALPS LSI Technologies Aptix Corporation Logical Devices Mentor Graphics ITS Logic Modeling Corp. Synopsis Division INCASES Engineering
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RS6000
XC5200
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XC6200
Abstract: XC009 PN16 XC6209 XC6216 XC6264 C031 vhdl code up down counter
Text: XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution
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XC6200
XC6200
XC6216
-2PC84C
-40oC
100oC
-55oC
125oC
84-Pin
HT144
XC009
PN16
XC6209
XC6264
C031
vhdl code up down counter
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XC6200
Abstract: p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38
Text: XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution
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XC6200
XC6200
XC6216
-2PC84C
84-Pin
HT144
144-Pin
BG225
225-Pin
HQ240
p61 s43
XC6264
w1p77
w56 transistor
BUF C038
N48 pqfp Package
Typ P194
B1 121 W97
diode ak38
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iso 7816-4
Abstract: BL7442 256X8
Text: BL7442LV Low voltage Intelligent 2K bits EEPROM Description BL7442LV is a IC Card chip module made by 1.2um CMOS EERPOM process. It has 256 byte EEPROM with logical encryption and function. It can be operated at low voltage.BL7442LV has two types, type A and
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BL7442LV
BL7442LV
58max
iso 7816-4
BL7442
256X8
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DM7407N
Abstract: DM5407J DM7407 DM5407W DM7407M J14A M14A N14A W14B
Text: DM7407 Hex Buffers with High Voltage Open-Collector Outputs General Description This device contains six independent gates each of which performs a buffer function. The open-collector outputs require external pull-up resistors for proper logical operation.
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DM7407
DS006497-1
DM5407J,
DM5407W,
DM7407M
DM7407N
DM7407N
DM5407J
DM7407
DM5407W
J14A
M14A
N14A
W14B
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tc5020bp
Abstract: No abstract text available
Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
DIF16-P-300A)
500kHz
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TC5020BP
Abstract: No abstract text available
Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOU-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
CHARAC600
500kHz
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Untitled
Abstract: No abstract text available
Text: TC5020BP C’MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5020BP HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC5020BP
500kHz
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TC5020BP
Abstract: No abstract text available
Text: TC5020BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC502 0 B P HEX LOU-TO-HIGH VOLTAGE T R A N S L A T O R INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for
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TC5020BP
TC502
TC5020BP
500kHz
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Untitled
Abstract: No abstract text available
Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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TC534200CF
Abstract: No abstract text available
Text: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.
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TC534200CP/CF/CFT
BITS/512
TC534200CP/TC534200CF
304-bit
TC534200CP/CF
40-pin
44-pin
TC534200CF
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TC5332200AF
Abstract: TC53322
Text: TO SH IB A TC5332200AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 2,097,152 WORD BY 16 BITS/4,194,304 WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC53322Ö0AF/AFT is a 33,554,432-bit Read Only Memory organized as 2,097,152 words by 16 bits when BYTE is logical high, and as 4,194,304 words by 8 bits when BYTE is logical low.
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TC5332200AF/AFT
TC53322
432-bit
TC5332200AF/AFT
44-pin
765TYP
TC5332200AF
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A10AL
Abstract: TC538200AFT
Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.
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TC538200AP/AF/AFT
TC538200AP/AF
608-bit
42-pin
44-pin
OP44--
A10AL
TC538200AFT
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TC5316200CP
Abstract: TC5316200CF
Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.
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TC5316200CP/CF/CFT
TC5316200CP/CF/CFT
216-bit
42-pin
44-pin
TC5316200CP
TC5316200CF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC 90A13N/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A13N, TC90A13F 3 LINE DIGITAL Y / C SEPARATION IC The TC9QA13N and TC9QA13F separate luminance Y and chrominance (C) signals from an NTSC composite video signal. It employs the Toshiba original logical comb filter
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90A13N/F
TC90A13N,
TC90A13F
TC9QA13N
TC9QA13F
SDIP28/SOP28
SDIP28-P--
10i-------
TC90A13N/F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC90A13N/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A13N, TC90A13F 3 LINE DIGITAL Y /C SEPARATION IC The TC90A13N and TC90A13F separate luminance Y and chrominance (C) signals from an NTSC composite video signal. It employs the Toshiba original logical comb filter
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TC90A13N/F
TC90A13N,
TC90A13F
TC90A13N
TC90A13F
SDIP28/SOP28
SDIP28-P-400-1
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A2ND
Abstract: CY7C9116 7C9116 7C9115
Text: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR CMOS 16-Bit Microprogrammed ALU CY7C9117 separate I/O — One and two operand arithmetic and logical operations — Bit m anipulation, field insertion/ extraction instructions — Eleven types of instructions
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CY7C9115
CY7C9116/CY7C9117
35-ns
16-Bit
9116A,
29C116,
9117A
29C117
CY7C9117
A2ND
CY7C9116
7C9116
7C9115
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54F151
Abstract: F151 F251
Text: FAST 54F151 Multiplexer Signetics 8-input Multiplexer Product Specification Military Logic Products FEATURES ORDERING INFORMATION • Multifunction capability • Complementary outputs • See 'F251 for 3-State version DESCRIPTION The 'F151 is a logical implementation of
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54F151
WF140IO
500ns
54F151
F151
F251
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