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    LOGICAL IC Search Results

    LOGICAL IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    LOGICAL IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    000068H

    Abstract: No abstract text available
    Text: RapidIO Logical I/O and Transport Layer Interface DS242 (v1.3.1) July 31, 2003 Introduction Product Specification LogiCORE Facts The Xilinx LogiCORE RapidIO™ Logical (I/O) and Transport Layer interface is optimized for Virtex™-II and Virtex-II Pro™ series FPGAs


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    PDF DS242 000068H

    timing DIAGRAM OF ROM

    Abstract: EEPROM ROM80 c5 rom Shanghai Belling D103 diagram of rom chip
    Text: BL7431A 256-Bit EEPROM Logical Encrypted Chip Description Pin Diagram BL7431A is the memory card chip developed by Shanghai Belling Co.,Ltd. The chip uses Shanghai Belling’s 1.2um CMOS & EEPROM process. It has 256 bits EEPROM A type or 512 bits EEPROM(B type) with logical


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    PDF BL7431A 256-Bit timing DIAGRAM OF ROM EEPROM ROM80 c5 rom Shanghai Belling D103 diagram of rom chip

    entrelec diode

    Abstract: Diode BFM diode 4007 DATASHEET din 4007 in 4007 diode 1SNA010134R1700 1SNA020021R1300 diode N 4007 diode 4007 diode in 4007
    Text: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners . 15.1 - 15.8 Series 10 000. 15.2


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    cd40109

    Abstract: CD40109BMS IOH15
    Text: CD40109BMS CMOS Quad Low-to-High Voltage Level Shifter December 1992 Features Description • High Voltage Type 20V Rating CD40109BMS contains four low-to-high voltage level shifting circuits. Each circuit will shift a low voltage digital logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS


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    PDF CD40109BMS CD40109BMS cd40109 IOH15

    sandisk flash controller

    Abstract: sandisk sd card geometry toshiba NAND Flash memory controller ecc SANDISK SDHC ULTRA SANDISK SDHC ULTRA class 6 TOSHIBA nand "numbering" flash sandisk SD sandisk 8gb sd card geometry "sd card" 2GB sandisk Nand flash part number
    Text: EYE 09 September 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 170 CONTENTS New Products NAND Flash Memory with Logical Address Access Method: LBA-NANDTM.2 Ultra High Speed SD Memory Cards. 2


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    PDF 32-bit 300mm sandisk flash controller sandisk sd card geometry toshiba NAND Flash memory controller ecc SANDISK SDHC ULTRA SANDISK SDHC ULTRA class 6 TOSHIBA nand "numbering" flash sandisk SD sandisk 8gb sd card geometry "sd card" 2GB sandisk Nand flash part number

    XC5200

    Abstract: No abstract text available
    Text: Edway Design Systems System Explorer ASIC Explorer XILLAS Concept Composer Verilog FPGA Designer Synergy Design Works TimingDesigner ALPS LSI Technologies Aptix Corporation Logical Devices Mentor Graphics ITS Logic Modeling Corp. Synopsis Division INCASES Engineering


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    PDF RS6000 XC5200

    XC6200

    Abstract: XC009 PN16 XC6209 XC6216 XC6264 C031 vhdl code up down counter
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


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    PDF XC6200 XC6200 XC6216 -2PC84C -40oC 100oC -55oC 125oC 84-Pin HT144 XC009 PN16 XC6209 XC6264 C031 vhdl code up down counter

    XC6200

    Abstract: p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38
    Text:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution


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    PDF XC6200 XC6200 XC6216 -2PC84C 84-Pin HT144 144-Pin BG225 225-Pin HQ240 p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38

    iso 7816-4

    Abstract: BL7442 256X8
    Text: BL7442LV Low voltage Intelligent 2K bits EEPROM Description BL7442LV is a IC Card chip module made by 1.2um CMOS EERPOM process. It has 256 byte EEPROM with logical encryption and function. It can be operated at low voltage.BL7442LV has two types, type A and


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    PDF BL7442LV BL7442LV 58max iso 7816-4 BL7442 256X8

    DM7407N

    Abstract: DM5407J DM7407 DM5407W DM7407M J14A M14A N14A W14B
    Text: DM7407 Hex Buffers with High Voltage Open-Collector Outputs General Description This device contains six independent gates each of which performs a buffer function. The open-collector outputs require external pull-up resistors for proper logical operation.


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    PDF DM7407 DS006497-1 DM5407J, DM5407W, DM7407M DM7407N DM7407N DM5407J DM7407 DM5407W J14A M14A N14A W14B

    tc5020bp

    Abstract: No abstract text available
    Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for


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    PDF TC5020BP TC5020BP DIF16-P-300A) 500kHz

    TC5020BP

    Abstract: No abstract text available
    Text: TC5020BP TC5020BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC HEX LOU-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for


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    PDF TC5020BP TC5020BP CHARAC600 500kHz

    Untitled

    Abstract: No abstract text available
    Text: TC5020BP C’MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5020BP HEX LOW-TO-HIGH VOLTAGE TRANSLATOR INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for


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    PDF TC5020BP TC5020BP 500kHz

    TC5020BP

    Abstract: No abstract text available
    Text: TC5020BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC502 0 B P HEX LOU-TO-HIGH VOLTAGE T R A N S L A T O R INVERTING TC5020BP contains six circuits of level converters which convert the signals from low power supply voltage logical systems to the logical signals for


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    PDF TC5020BP TC502 TC5020BP 500kHz

    Untitled

    Abstract: No abstract text available
    Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    PDF TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin

    TC534200CF

    Abstract: No abstract text available
    Text: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.


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    PDF TC534200CP/CF/CFT BITS/512 TC534200CP/TC534200CF 304-bit TC534200CP/CF 40-pin 44-pin TC534200CF

    TC5332200AF

    Abstract: TC53322
    Text: TO SH IB A TC5332200AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 2,097,152 WORD BY 16 BITS/4,194,304 WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC53322Ö0AF/AFT is a 33,554,432-bit Read Only Memory organized as 2,097,152 words by 16 bits when BYTE is logical high, and as 4,194,304 words by 8 bits when BYTE is logical low.


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    PDF TC5332200AF/AFT TC53322 432-bit TC5332200AF/AFT 44-pin 765TYP TC5332200AF

    A10AL

    Abstract: TC538200AFT
    Text: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.


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    PDF TC538200AP/AF/AFT TC538200AP/AF 608-bit 42-pin 44-pin OP44-- A10AL TC538200AFT

    TC5316200CP

    Abstract: TC5316200CF
    Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


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    PDF TC5316200CP/CF/CFT TC5316200CP/CF/CFT 216-bit 42-pin 44-pin TC5316200CP TC5316200CF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.


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    PDF TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC 90A13N/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A13N, TC90A13F 3 LINE DIGITAL Y / C SEPARATION IC The TC9QA13N and TC9QA13F separate luminance Y and chrominance (C) signals from an NTSC composite video signal. It employs the Toshiba original logical comb filter


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    PDF 90A13N/F TC90A13N, TC90A13F TC9QA13N TC9QA13F SDIP28/SOP28 SDIP28-P-- 10i------- TC90A13N/F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC90A13N/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A13N, TC90A13F 3 LINE DIGITAL Y /C SEPARATION IC The TC90A13N and TC90A13F separate luminance Y and chrominance (C) signals from an NTSC composite video signal. It employs the Toshiba original logical comb filter


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    PDF TC90A13N/F TC90A13N, TC90A13F TC90A13N TC90A13F SDIP28/SOP28 SDIP28-P-400-1

    A2ND

    Abstract: CY7C9116 7C9116 7C9115
    Text: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR CMOS 16-Bit Microprogrammed ALU CY7C9117 separate I/O — One and two operand arithmetic and logical operations — Bit m anipulation, field insertion/ extraction instructions — Eleven types of instructions


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    PDF CY7C9115 CY7C9116/CY7C9117 35-ns 16-Bit 9116A, 29C116, 9117A 29C117 CY7C9117 A2ND CY7C9116 7C9116 7C9115

    54F151

    Abstract: F151 F251
    Text: FAST 54F151 Multiplexer Signetics 8-input Multiplexer Product Specification Military Logic Products FEATURES ORDERING INFORMATION • Multifunction capability • Complementary outputs • See 'F251 for 3-State version DESCRIPTION The 'F151 is a logical implementation of


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    PDF 54F151 WF140IO 500ns 54F151 F151 F251