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    LOGIC LEVEL P-CHANNEL POWER MOSFET Search Results

    LOGIC LEVEL P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    LOGIC LEVEL P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking 58A

    Abstract: FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50mΩ General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDC658AP marking 58A FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		Si3455DV PDF

    marking 654

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P FDC654P marking 654 PDF

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		Si3455DV PDF

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P FDC654P PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    FDN358P

    Abstract: FDN358
    Text: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN358P OT-23 FDN358P FDN358 PDF

    FDN340P application note

    Abstract: FDN340P
    Text: FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN340P OT-23 FDN340P application note FDN340P PDF

    CBVK741B019

    Abstract: F63TNR FDN340P MMSZ5221B
    Text: FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN340P OT-23 CBVK741B019 F63TNR FDN340P MMSZ5221B PDF

    MARKING 358

    Abstract: No abstract text available
    Text: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN358P OT-23 MARKING 358 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG50N05L, RFP50N05L Semiconductor A p ril 1999 D ata S h eet 50A, 50V, 0.027 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		RFG50N05L, RFP50N05L AN7254 AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM S em iconductor A p ril 1999 D ata S h eet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		RFD16N05L, RFD16N05LSM 46E-5) 38E-3 66E-3 614E-3 13E-9 14E-8) PDF

    IRHLUB770Z

    Abstract: IRHLUB7930Z4
    Text: PD-94764E RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power


    Original     		PD-94764E IRHLUB7970Z4 IRHLUB7970Z4 IRHLUB7930Z4 MIL-PRF-19500/255L IRHLUB770Z PDF

    IRHLF670Z4

    Abstract: IRHLF6930Z4 IRHLF6970Z4
    Text: PD - 94685 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 IRHLF6970Z4 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLF6970Z4 100K Rads (Si) 1.2Ω -1.6A IRHLF6930Z4 300K Rads (Si) 1.2Ω -1.6A International Rectifier’s R6 TM Logic Level Power


    Original     		IRHLF6970Z4 IRHLF6970Z4 IRHLF6930Z4 -170A/ MIL-STD-750, MlL-STD-750, O-205AF IRHLF670Z4 IRHLF6930Z4 PDF

    417 mosfet

    Abstract: UT5504G-TN3-R d 417 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD UT5504 Preliminary Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION „ The UTC UT5504 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device


    Original     		UT5504 UT5504 UT5504G-TN3-R O-252 QW-R502-417 417 mosfet UT5504G-TN3-R d 417 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device


    Original     		UT30P04 UT30P04 UT30P04G-TN3-R O-252 QW-R502-465 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		UT2352 UT2352 UT2352L UT2352-AE3-R UT2352L-AE3-R OT-23 QW-R502-157 PDF

    UTC654L-AG6-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.


    Original     		UTC654 UTC654 UTC654L-AG6-R UTC654G-AG6-R OT-26 QW-R502-153 UTC654L-AG6-R PDF

    Untitled

    Abstract: No abstract text available
    Text: WT3139K Surface Mount P-Channel MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * Surface Mount Package * P-Channel Switch with Low R DS (on) * Operated at Low Logic Level Gate Drive SOT-723 Applications: 3 * Load/Power Switching * Interfacing, Logic Switching


    Original     		WT3139K OT-723 30-Jul-2013 OT-723 PDF

    FDN340P

    Abstract: No abstract text available
    Text: February 2007 FDN340P Single P-Channel , Logic Level , PowerTrench MOSFET GeneralDescription Features Thi s P-Channel Logi c Level MOSFET i s produced usi ng Fai rchi ld Semi conductor advanced Power Trench process that has been especi ally tai lored to mi


    Original     		FDN340P FDN340P PDF

    RFP17N06L

    Abstract: No abstract text available
    Text: Logic-Level Power MOSFETs File Number 2272 RFP17N06L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors 17 A, 60 V P d s o n l " 0 .1 0 0 N-CHANNEL ENHANCEMENT MODE O D Features: • Design optimized for 5 volt gate drive m Can be driven directly from O-MOS, N-MOS, TTL Circuits


    OCR Scan     		RFP17N06L RFP17N06L 40tagC R06HFP17N06L07 250u9 GFSRFPf7N06lCF6 PDF

    2P03L

    Abstract: 2p03
    Text: RFT2P03L Semiconductor Data Sheet October 1998 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		RFT2P03L TA49222. 1-800-4-HARRIS 2P03L 2p03 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQS4900 -300V, FQS4900 FQS4900TF PDF

    marking 564

    Abstract: FDC5614P
    Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications


    Original     		FDC5614P FDC5614P NF073 marking 564 PDF