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    LOGIC LEVEL COMPLEMENTARY MOSFET Search Results

    LOGIC LEVEL COMPLEMENTARY MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LOGIC LEVEL COMPLEMENTARY MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET S1A

    Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
    Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF3V49092, RF3S49092SM 0A/10A, MOSFET S1A datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322

    Untitled

    Abstract: No abstract text available
    Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using


    Original     		PDF RF1K49092

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
    Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334 AN9322

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
    Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334

    MO-169AB

    Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
    Text: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in


    Original     		PDF RF3S49092SM 0A/10A, MO-169AB RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs

    p-channel pspice model

    Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
    Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    Original     		PDF RF1K49092 RF1K49092 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) p-channel pspice model AN9321 AN9322 MS-012AA RF1K4909296

    MiniMOS

    Abstract: MMDF1300 MMDF1300R2 C2608
    Text: MMDF1300 Power MOSFET 3 Amps, 25 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF1300 r14525 MMDF1300/D MiniMOS MMDF1300 MMDF1300R2 C2608

    Untitled

    Abstract: No abstract text available
    Text: MMDF1300 Power MOSFET 3 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF1300 MMDF1300/D

    Untitled

    Abstract: No abstract text available
    Text: MMDF4C03HD Power MOSFET 4 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF4C03HD r14525 MMDF4C03HD/D

    Untitled

    Abstract: No abstract text available
    Text: FDG8842CZ tm Complementary PowerTrench MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell


    Original     		PDF FDG8842CZ FDG8842CZ

    Untitled

    Abstract: No abstract text available
    Text: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C03HD MMDF2C03HD/D

    FDG8842CZ

    Abstract: SC70-6 marking 42
    Text: FDG8842CZ tm Complementary PowerTrench MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell


    Original     		PDF FDG8842CZ FDG8842CZ SC70-6 marking 42

    f2c02

    Abstract: No abstract text available
    Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C02E MMDF2C02E/D f2c02

    f2c02

    Abstract: MOSFEt n channel for 800 volt 2 amp 2706 fet mosfet transistor 400 volts.100 amperes AN569 MMDF2C02E MMDF2C02ER2
    Text: MMDF2C02E Power MOSFET 2.5 Amps, 25 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C02E MMDF2C02E/D f2c02 MOSFEt n channel for 800 volt 2 amp 2706 fet mosfet transistor 400 volts.100 amperes AN569 MMDF2C02E MMDF2C02ER2

    d2c03

    Abstract: No abstract text available
    Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C03HD 0E-05 0E-04 0E-03 0E-02 0E-01 d2c03

    Untitled

    Abstract: No abstract text available
    Text: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF NTMD2C02R2

    D2C01

    Abstract: No abstract text available
    Text: MMDF2C01HD Preferred Device Power MOSFET 2 Amps, 12 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C01HD r14525 MMDF2C01HD/D D2C01

    Untitled

    Abstract: No abstract text available
    Text: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the


    Original     		PDF MMDF2C03HD

    logic level complementary MOSFET

    Abstract: No abstract text available
    Text: in te r rii Complementary Pairs 9 Power M O SFE T Products PAGE Complementary Pairs Data Sheets RF1K49092 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET. . 9-3 RF1K49224 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET™ Power MOSFET.


    OCR Scan     		PDF RF1K49092 RF1K49224 RF3V49092, RF3S49092SM 0A/10A, logic level complementary MOSFET

    RF3S49092SM9A

    Abstract: MO-169AB RF3S49092SM RF3V49092 ZT600
    Text: RF3V49092, RF3S49092SM interrii Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		PDF RF3V49092, RF3S49092SM 0A/10A, RF3S49092SM9A MO-169AB RF3S49092SM RF3V49092 ZT600

    TPG1212

    Abstract: PIN diode Pspice model
    Text: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		PDF RF3V49092, RF3S49092, RF3S49092SM 0A/10A, 1-800-4-HARRIS TPG1212 PIN diode Pspice model

    AN9321

    Abstract: AN9322 an7254 AN7260
    Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		PDF RF3V49092, RF3S49092SM 0A/10A, AN7254 AN7260. RF3S49092SM AN9321 AN9322 AN7260

    logic level complementary MOSFET

    Abstract: No abstract text available
    Text: RF1K49092 ÎSÎ HARRIS S E M I C O N D U CTÖR January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    OCR Scan     		PDF RF1K49092 RF1K49092 TA49092. Logic12V 050i2 S-012A RF1K4909296. MS-012AA logic level complementary MOSFET

    AN9321

    Abstract: No abstract text available
    Text: in te r r ii RF1K49092 D ata S h e e t A u g u s t 19 99 3.SA/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    OCR Scan     		PDF RF1K49092 RF1K49092 AN9321