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    LNA SIGE TRANSISTOR Search Results

    LNA SIGE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LNA SIGE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5Ghz lna transistor

    Abstract: SiGE wlan LNA MAX2648 "wireless design guide" maxim SiGe LNA SiGe
    Text: WORLD’S SMALLEST 5GHz SiGe LNA OFFERS 1.8dB NF The MAX2648 SiGe LNA takes the complexity out of designing a low-cost, high-performance 5GHz LNA for IEEE802.11a and HiperLAN2 wireless LAN systems. Compared to a discrete design, the LNA’s integrated active bias network saves 1 transistor and 3 passive


    Original     		PDF MAX2648 IEEE802 11mm2, 12-15dB MAX2648 5Ghz lna transistor SiGE wlan LNA "wireless design guide" maxim SiGe LNA SiGe

    BFP620 applications note

    Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
    Text: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The


    Original     		PDF BFP640 BFP620, BFP620. OT-343 BFP620 applications note 28428 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz

    free transistor and ic equivalent data

    Abstract: AN697 germanium npn germanium transistors NPN MAX2247 MAX2321 MAX2323 MAX2338 5Ghz lna transistor MAX2641
    Text: Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: silicon germanium, SiGe, rfic, rf design, lna, rfics, rf ics Mar 15, 2000 APPLICATION NOTE 697 Silicon Germanium SiGe Technology Enhances Radio Front-End Performance


    Original     		PDF MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: MAX9987: MAX9988: free transistor and ic equivalent data AN697 germanium npn germanium transistors NPN MAX2247 MAX2321 MAX2323 MAX2338 5Ghz lna transistor MAX2641

    MAX2321

    Abstract: MAX2320 MAX2320EUP MAX2322 MAX2321EUP MAX2324 MAX2326 MAX2327 max232 replacement MAX232 16 pin
    Text: 19-1535; Rev 2; 4/06 NUAL KIT MA ATION EET H S A EVALU T WS DA O L L O F Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/ MAX2327 high-performance silicon germanium SiGe receiver front-end ICs set a new industry standard for


    Original     		PDF MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/ MAX2327 MAX2320 MAX2320/21/22/24/26/27 MAX2321 MAX2320EUP MAX2322 MAX2321EUP MAX2324 MAX2326 max232 replacement MAX232 16 pin

    low noise amplifier MMIC

    Abstract: schematic diagram of bluetooth receiver amplifier TRANSISTOR 12 GHZ BGA622 DCS1800 GSM900 3g amplifier
    Text: Silicon Discretes The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Application Note No. 069 Features • Versatile, easy-to-use LNA MMIC in 70 GHz ft SiGe technology 3 • 50 Ω matched output, pre-matched input


    Original     		PDF BGA622 OT-343 GSM900, DCS1800, low noise amplifier MMIC schematic diagram of bluetooth receiver amplifier TRANSISTOR 12 GHZ DCS1800 GSM900 3g amplifier

    M 57741

    Abstract: AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129
    Text: THN6501 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA


    Original     		PDF THN6501 OT323 THN6501Z THN6501U OT343 THN6501E THN6501S 000GHz 200GHz M 57741 AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129

    MAX2320

    Abstract: MAX2320EUP MAX2321 Diplexer 900 1800 MAX232 connection MAX232 pin configuration MAX2321EUP MAX2322EUP MAX2324EUP MAX2326
    Text: 19-1535; Rev 0; 9/99 Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs KIT ATION EVALU E L B A IL AVA Applications CDMA/TDMA/PDC/WCDMA/GSM Cellular Phones Single/Dual/Triple-Mode Phones Features ♦ Ultra-High Linearity at Ultra-Low Current and Noise


    Original     		PDF MAX2321) MAX2326) 20-Pin MAX2320EUP MAX2321EUP MAX2322EUP MAX2324EUPearity, MAX2320/21/22/24/26/27/29 MAX2320 MAX2320EUP MAX2321 Diplexer 900 1800 MAX232 connection MAX232 pin configuration MAX2321EUP MAX2322EUP MAX2324EUP MAX2326

    MAX2645EUB

    Abstract: MAX2645 Digital microwave radio
    Text: 19-1759; Rev 1; 8/03 KIT ATION EVALU E L B A IL AVA 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver Applications Features ♦ 3.4GHz to 3.8GHz Frequency Range ♦ LNA Performance High/Low-Gain Modes Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB Input IP3: +4dBm/+13dBm


    Original     		PDF 3dB/15 13dBm 10-Pin MAX2645EUB MAX2645EUB MAX2645 Digital microwave radio

    59013 transistor

    Abstract: transistor 59013 transistor 585-34 79024 79015 38436 ic 8237 ua 0741 78840 177-043
    Text: THN4501 Series Semiconductor SiGe NPN Transistor SOT-523 □ Application Unit in mm LNA and wide band amplifier up to GHz range □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain


    Original     		PDF THN4501 OT-523 THN4501U OT-323 OT-343 THN4501E THN4501Z 800GHz 000GHz 200GHz 59013 transistor transistor 59013 transistor 585-34 79024 79015 38436 ic 8237 ua 0741 78840 177-043

    49431

    Abstract: 78561 7651-4 Series 16-2-682 85-497 141834 B 1184 ic 76820 pin configuration THN4301Z OF IC 7912
    Text: THN4301 Series Semiconductor SiGe NPN Transistor SOT-523 □ Application Unit in mm LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain


    Original     		PDF THN4301 OT-523 THN4301U OT-323 OT-343 800GHz 000GHz 200GHz 400GHz 600GHz 49431 78561 7651-4 Series 16-2-682 85-497 141834 B 1184 ic 76820 pin configuration THN4301Z OF IC 7912

    ic 74595

    Abstract: PIN CONFIGURATION IC 555 RF NPN POWER TRANSISTOR C 10-12 GHZ IC 70439 118.076 2 F transistor h a 431 transistor ic 701 97979 THN4201
    Text: THN4201 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB Typ. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Pin Configuration


    Original     		PDF THN4201 OT343 THN4201E THN4201Z OT323 000GHz 200GHz 400GHz 600GHz 800GHz ic 74595 PIN CONFIGURATION IC 555 RF NPN POWER TRANSISTOR C 10-12 GHZ IC 70439 118.076 2 F transistor h a 431 transistor ic 701 97979

    M 57741

    Abstract: marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080
    Text: THN6501 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA


    Original     		PDF THN6501 OT-523 THN6501S OT-23 OT-323 THN6501Z OT-343 THN6501E THN6501U 800GHz M 57741 marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080

    44606

    Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174
    Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA


    Original     		PDF THN6301 OT-523 OT-23 THN6301U OT-323 THN6301Z OT-343 THN6301E 000GHz 200GHz 44606 63817 76231 THN6301E THN6301S THN6301U THN6301Z 58168 52174

    130-082

    Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
    Text: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain


    Original     		PDF THN6201 THN6201S THN6201U OT323 THN62 000GHz 200GHz 400GHz 600GHz 130-082 ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 dc 38438 33171

    130-082

    Abstract: ic 38438 33171 62944 63950 128777 THN6201 THN6201E THN6201S THN6201U
    Text: THN6201 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain


    Original     		PDF THN6201 OT-523 THN6201S OT-23 THN6201U OT-323 01GHz 000GHz 200GHz 400GHz 130-082 ic 38438 33171 62944 63950 128777 THN6201E THN6201S THN6201U

    130009 power transistor

    Abstract: 70603 transistor 70603 74718 166722 34053 159237 75168 60310 THN4201E
    Text: THN4201 Series Semiconductor SiGe NPN Transistor SOT-523 □ Application Unit in mm LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain


    Original     		PDF THN4201 OT-523 THN4201U OT-323 OT-343 000GHz 200GHz 400GHz 600GHz 800GHz 130009 power transistor 70603 transistor 70603 74718 166722 34053 159237 75168 60310 THN4201E

    LNA 2.4GHZ bluetooth

    Abstract: 2.4GHz antenna schematic 50 ohm 2 ghz Antenna SiGE wlan LNA 2.5 ghz lna transistor lna 2,4 ghz schematic
    Text: Low-Noise-Amplifier SIGE-0.8µm RF-Library DATA SHEET Key Features - 2.7 – 3.6V supply 2.4 – 2.5 GHz operating frequency range 16 dB voltage gain 3 dB noise figure -10 dBm IIP3 3 mA current consumption Size: 0.3 x0.5 mm General Description The Low-Noise-Amplifier LNA is designed for minimum


    Original     		PDF

    121-351

    Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
    Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA


    Original     		PDF THN6301 OT343 OT523 THN6301KF OT323 THN6301Z THN6301U 000GHz 200GHz 121-351 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125

    MAX2645

    Abstract: MAX2645EUB max2645-02
    Text: 19-1759; Rev 0; 7/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver Applications Features ♦ 3.4GHz to 3.8GHz Frequency Range ♦ LNA Performance High/Low-Gain Modes Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB


    Original     		PDF 3dB/15 13dBm 10-Pin MAX2645EUB MAX2645 MAX2683 MAX2684 MAX2645 MAX2645EUB max2645-02

    54175

    Abstract: ic 4043 MAX2644 MAX2644EXT-T SC70-6 400mils 05361 High IP3 Low-Noise Amplifier transistor 40087
    Text: 19-1786; Rev 1; 11/03 KIT ATION EVALU E L B A AVAIL 2.4GHz SiGe, High IP3 Low-Noise Amplifier The MAX2644 low-cost, high third-order intercept point IP3 low-noise amplifier (LNA) is designed for applications in 2.4GHz WLAN, ISM, and Bluetooth radio systems. It features a programmable bias, allowing the


    Original     		PDF MAX2644 2450MHz) MAX2644 54175 ic 4043 MAX2644EXT-T SC70-6 400mils 05361 High IP3 Low-Noise Amplifier transistor 40087

    Untitled

    Abstract: No abstract text available
    Text: 19-1759; Rev 0; 7/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver Applications Features ♦ 3.4GHz to 3.8GHz Frequency Range ♦ LNA Performance High/Low-Gain Modes Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB


    Original     		PDF 3dB/15 13dBm 10-Pin MAX2645 MAX2683 MAX2684 MAX2645

    MAX2320

    Abstract: MAX2320EUP MAX2321 MAX2322 MAX2321EUP MAX2322EUP MAX2324EUP MAX2326 MAX2326EUP MAX2327
    Text: 19-1535; Rev 1; 6/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs All devices come in a 20-pin TSSOP-EP package with exposed paddle EP and are specified for the extended temperature range (-40°C to +85°C).


    Original     		PDF MAX2321) MAX2326) 20-Pin MAX2321EUP MAX2322EUP MAX2324EUP MAX2327 MAX2320/21/22/24/26/27 MAX2320 MAX2320EUP MAX2321 MAX2322 MAX2321EUP MAX2322EUP MAX2324EUP MAX2326 MAX2326EUP MAX2327

    MAX2320

    Abstract: MAX2320EUP MAX2321 ics 0434 MAX2322 fm transmitter ic digital input MAX232 connection MAX2321EUP Cellular RF Transmitter 1900 2400 MHz MAX2324EUP
    Text: 19-1535; Rev 1; 6/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs All devices come in a 20-pin TSSOP-EP package with exposed paddle EP and are specified for the extended temperature range (-40°C to +85°C).


    Original     		PDF MAX2321) MAX2326) 20-Pin MAX2321EUP MAX2322EUP MAX2324EUP MAX2327 MAX2320/21/22/24/26/27 MAX2320 MAX2320EUP MAX2321 ics 0434 MAX2322 fm transmitter ic digital input MAX232 connection MAX2321EUP Cellular RF Transmitter 1900 2400 MHz MAX2324EUP

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT