QFN12
Abstract: MC13770 PC13770FC QFN-12
Text: Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package PC13770FC PC70 QFN-12 The MC13770 is a LNA Downconverter designed specifically for WCDMA handsets. The
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MC13770PP/D
MC13770
QFN-12)
PC13770FC
QFN-12
MC13770
QFN12
PC13770FC
QFN-12
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MC13770
Abstract: PC13770FC QFN-12 LNA marking R0
Text: Freescale Semiconductor, Inc. Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package
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MC13770PP/D
MC13770
QFN-12)
PC13770FC
QFN-12
MC13770
PC13770FC
QFN-12
LNA marking R0
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Untitled
Abstract: No abstract text available
Text: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713N7
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Untitled
Abstract: No abstract text available
Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA751N7
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smd resistor 0402 footprint dimension
Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Text: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713L7
smd resistor 0402 footprint dimension
BGA713L7
TGS 821
C166
T1533
713L
LNA marking R0
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Untitled
Abstract: No abstract text available
Text: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA777N7
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Untitled
Abstract: No abstract text available
Text: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA711N7
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Untitled
Abstract: No abstract text available
Text: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713L7
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TGS 880
Abstract: INFINEON PART MARKING BGA751L7 S12L
Text: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.
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BGA751L7
TGS 880
INFINEON PART MARKING
S12L
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BGA751L7
Abstract: No abstract text available
Text: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA751L7
BGA751L7
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA751L7
BGA751L7
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TGS 2620
Abstract: UMTS transistor TGS 2600
Text: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA777L7
BGA777L7
TGS 2620
UMTS transistor
TGS 2600
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smd resistor 0402 footprint dimension
Abstract: BGA711L7
Text: Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A 2100, 1900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA711L7
BGA711L7
smd resistor 0402 footprint dimension
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA777L7
BGA777L7
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Untitled
Abstract: No abstract text available
Text: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.
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CMY191
24dBm.
96GHz;
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Untitled
Abstract: No abstract text available
Text: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity
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MGA-65606
MGA-65606
MGA-65606-BLKG
MGA-65606-TR1G
MGA-65606-TR2G
AV02-2889EN
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MGA-65606
Abstract: No abstract text available
Text: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity
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MGA-65606
MGA-65606
MGA-65606-BLKG
MGA-65606-TR1G
MGA-65606-TR2G
AV02-2889EN
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FREESCALE MARKING C3
Abstract: QFN-12 MC13770 MC13770FC
Text: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for
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MC13770/D
MC13770
QFN-12)
MC13770
MC13770FC
QFN-12
FREESCALE MARKING C3
QFN-12
MC13770FC
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for
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MC13770/D
MC13770
QFN-12)
MC13770
MC13770FC
QFN-12
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freescale semiconductor body marking
Abstract: QFN-12 1.5
Text: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for
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MC13770/D
MC13770
MC13770FC
QFN-12)
QFN-12
MC13770
freescale semiconductor body marking
QFN-12 1.5
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LNA MARKING 4F
Abstract: 7313 28 pin MGA-645T6 marking 6 180 722 10-pin A004R
Text: MGA-645T6 Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-645T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and
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MGA-645T6
MGA-645T6
AV02-0006EN
LNA MARKING 4F
7313 28 pin
marking 6 180 722 10-pin
A004R
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RO4850
Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
MCR 052 PIN 100
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MGA-64606
Abstract: No abstract text available
Text: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high
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MGA-64606
MGA-64606
MGA-64606-BLKG
MGA-64606-TR1G
MGA-64606-TR2G
AV02-2888EN
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
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