stripline filter
Abstract: BGA2012 TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz
Text: H High IP3 MMIC LNA at 1.8-2.4 GHz Application note for the BGA2012 The BGA2012 is a MMIC 50 Ω LNA block for cellular applications at 1.8 GHz to 2.4 GHz that require low noise, high gain and good linearity. Possible applications: • 1.8 GHz - DECT - gain 15 dB, low noise 1.7 dB, supply curent 4 mA
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BGA2012
BGA2012
OT363.
-------20mm------->
TDK0603
stripline filter
TDK0603
TRANSISTOR SMD nf c4
High IP3 MMIC LNA at 1.8-2.4 GHz
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APP3039
Abstract: MAX2387 MAX2388 MAX2389
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: wcs, lna, mixer, front end, down converter, 2.3 ghz, max2388, max2387, max2389, gain, linearity, iip3, iip2, noise figure Jun 15, 2004 APPLICATION NOTE 3039 MAX2388 Front-End IC for WCS Application at 2.3GHz RF and
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max2388,
max2387,
max2389,
MAX2388
220MHz
220MHz.
MAX2387
com/an3039
APP3039
MAX2389
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44606
Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174
Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA
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THN6301
OT-523
OT-23
THN6301U
OT-323
THN6301Z
OT-343
THN6301E
000GHz
200GHz
44606
63817
76231
THN6301E
THN6301S
THN6301U
THN6301Z
58168
52174
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M 57741
Abstract: marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080
Text: THN6501 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
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THN6501
OT-523
THN6501S
OT-23
OT-323
THN6501Z
OT-343
THN6501E
THN6501U
800GHz
M 57741
marking 269-3 sot23
48358
76129
156917
149945
52169
30424 ic
THN6501E
155080
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dc to 3 ghz lna application circuits
Abstract: MGA-645T6 E4440A dc to 3 ghz lna amplifier application circuits FR4 Prepreg for RF 06 layer PCB
Text: Low Noise High Linearity Amplifier with Integrated Bypass Switch for 2.3 to 2.7 GHz Application Using MGA-645T6 Application Note 5312 Introduction This application note describes the design of application circuits for the LNA from 2.3 to 2.4 GHz for WiMax,
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MGA-645T6
11b/g)
MGA-645T6
-30dBm
-20dBm
AV01-0678EN
AV02-0476EN
dc to 3 ghz lna application circuits
E4440A
dc to 3 ghz lna amplifier application circuits
FR4 Prepreg for RF 06 layer PCB
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rf transceiver 2.4 ghz
Abstract: SA2420 SA2420DH TSSOP24 LNA Mixer VCO 2.4 GHz 2.45Ghz 10dbm oscillator 2sa2420 2.45Ghz oscillator circuit
Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive
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SA2420
45GHz
SA2420
45GHz
rf transceiver 2.4 ghz
SA2420DH
TSSOP24
LNA Mixer VCO 2.4 GHz
2.45Ghz 10dbm oscillator
2sa2420
2.45Ghz oscillator circuit
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rf transceiver 2.4 ghz
Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive
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SA2420
45GHz
SA2420
45GHz
rf transceiver 2.4 ghz
2.45GHZ balun
"RF Transceiver"
2.2 ghz bandpass filter chip
5Ghz lna transistor datasheet
TSSOP24
SA2420DH
2.45Ghz oscillator circuit
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drive 5v 30191
Abstract: SA601 SA601DK 346-64 SR00065 30191
Text: INTEGRATED CIRCUITS SA601 Low voltage LNA and mixer – 1 GHz Product data Supersedes data of 1994 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA and mixer SA601 DESCRIPTION PIN CONFIGURATION The SA601 is a combined RF amplifier and mixer designed for
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SA601
SA601
800-1200MHz.
900MHz
900MHz.
drive 5v 30191
SA601DK
346-64
SR00065
30191
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SA2420
Abstract: SA2421 SA2421DH TSSOP24 LNA Mixer 2.4 GHz 2.45Ghz oscillator circuit
Text: INTEGRATED CIRCUITS SA2421 Low voltage RF transceiver — 2.45GHz Objective specification Philips Semiconductors 1998 Aug 24 Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive
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SA2421
45GHz
SA2421
45GHz
SA2420
SA2421DH
TSSOP24
LNA Mixer 2.4 GHz
2.45Ghz oscillator circuit
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Tower Mounted Amplifiers Schematic
Abstract: HMC593LP3 HMC593LP3E capacitor 10kpf
Text: HMC593LP3 / 593LP3E v00.0407 LOW NOISE AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Typical Applications Features The HMC593LP3 / HMC593LP3E is ideal for: Noise Figure: 1.2 dB • Wireless Infrastructure Output IP3: +29 dBm
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HMC593LP3
593LP3E
HMC593LP3E
Tower Mounted Amplifiers Schematic
capacitor 10kpf
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dc to 3 ghz lna application circuits
Abstract: bipolar transistor ghz s-parameter 300 ohm 2 ghz Antenna T7024 atmel 811 schematics for a PA amplifier QFN20 short distance rf tx ic J103 transistor top view ICT7024
Text: Bluetooth Front-end IC T7024 Design Guide General Information The T7024 is a single supply front-end IC especially designed for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.
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T7024
T7024
4549D
dc to 3 ghz lna application circuits
bipolar transistor ghz s-parameter
300 ohm 2 ghz Antenna
atmel 811
schematics for a PA amplifier
QFN20
short distance rf tx ic
J103 transistor top view
ICT7024
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HMC604LP3
Abstract: No abstract text available
Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Amplifiers - low Noise - smT 7 Typical Applications Features The HmC604lp3 / HmC604lp3e is ideal for: Noise figure: 1.5 dB • wimAX/C-band radio output ip3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
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Untitled
Abstract: No abstract text available
Text: HMC309MS8 v03.0304 GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH AMPLIFIERS - SMT 8 Typical Applications Features LNA & Transmit/Receive Switch Front-End for 2.4 GHz Applications: Gain: 8 dB • 802.11 WLAN Integrated LNA & Switch • BLUETOOTH • HomeRF Integrated Power Control:
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HMC309MS8
HMC309MS8
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HPMX-3003
Abstract: HPMX-3003-BLK HPMX-3003-TR1 SSOP-28
Text: H 1.5 – 2.5 GHz LNA Switch PA Technical Data HPMX-3003 Features Description Plastic SSOP-28 Hewlett-Packard’s HPMX-3003 combines a Low Noise Amplifier, GaAs MMIC switch, and 27.5 dBm power amp in a single miniature 28 lead surface mount plastic package. This RFIC would
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HPMX-3003
SSOP-28
30PMX
HPMX-3003-TR1
HPMX-3003-BLK
5964-9490EUS
5965-1403E
HPMX-3003
HPMX-3003-BLK
HPMX-3003-TR1
SSOP-28
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SA2420
Abstract: SA2421 SA2421DH TSSOP24 Transceiver 20 GHz block Diagram
Text: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Product specification Supersedes data of 2000 Feb 11 Philips Semiconductors 2000 Mar 13 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION
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SA2421
SA2421
SA2420
SA2421DH
TSSOP24
Transceiver 20 GHz block Diagram
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RF LNA 10 GHz
Abstract: No abstract text available
Text: HMC309MS8 v02.0701 MICROWAVE CORPORATION GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH AMPLIFIERS - SMT 1 Typical Applications Features LNA & Transmit/Receive Switch Front-End for 2.4 GHz Applications: Gain: 8 dB • 802.11 WLAN Integrated LNA & Switch • BLUETOOTH
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HMC309MS8
HMC309MS8
RF LNA 10 GHz
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350-400MHZ
Abstract: SA2420 SA2420DH TSSOP24 2SA2420 2.45Ghz 10dbm oscillator 2.45Ghz oscillator circuit
Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive
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SA2420
45GHz
SA2420
45GHz
350-400MHZ
SA2420DH
TSSOP24
2SA2420
2.45Ghz 10dbm oscillator
2.45Ghz oscillator circuit
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Untitled
Abstract: No abstract text available
Text: MD59-0049 PCS CDMA LNA / Downconverter 1.80 - 2.0 GHz IF OUT GND IF MATCH High Integrated LNA and Downconverter Operates over 2.7 V to 5V Supply Voltage Low Noise Figure, 2.3 dB Typical High Input Intercept Point Continuous Current Control Downconverter Continuous Gain Control Downconverter
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MD59-0049
MD59-0049
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DSRC 5.8 GHz
Abstract: Tower Mounted Amplifiers Schematic schematic dsrc HMC604LP3 HMC604LP3E
Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
DSRC 5.8 GHz
Tower Mounted Amplifiers Schematic
schematic dsrc
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DSRC 5.8 GHz
Abstract: No abstract text available
Text: HMC604LP3 / 604LP3E v00.0308 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
DSRC 5.8 GHz
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BFP620 applications note
Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
Text: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The
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BFP640
BFP620,
BFP620.
OT-343
BFP620 applications note
28428
BFP640 noise figure
transistor l2
ansoft
3RD Rail Engineering
RF LNA 10 GHz
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Preliminary specification Philips Semiconductors 2000 Feb 11 Philips Semiconductors Preliminary specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low–noise amplifier, receive
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SA2421
SA2421
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HPMX-3003
Abstract: HPMX-3003-BLK HPMX-3003-TR1 SSOP-28
Text: 1.5 – 2.5 GHz LNA Switch PA Technical Data HPMX-3003 Features Description Plastic SSOP-28 Agilent’s HPMX-3003 combines a Low Noise Amplifier, GaAs MMIC switch, and 27.5 dBm power amp in a single miniature 28 lead surface mount plastic package. This RFIC would typically serve as
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HPMX-3003
SSOP-28
HPMX-3003
30PMX
SSOP-28
HPMX-3003-TR1
HPMX-3003-BLK
5965-1403E
HPMX-3003-BLK
HPMX-3003-TR1
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marking 606 mmic
Abstract: No abstract text available
Text: HMC593LP3 / 593LP3E v00.0407 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Typical Applications Features The HMC593LP3 / HMC593LP3E is ideal for: Noise Figure: 1.2 dB • Wireless Infrastructure Output IP3: +35 dBm • Fixed Wireless
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HMC593LP3
593LP3E
HMC593LP3E
marking 606 mmic
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