Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LNA 2.5 GHZ S PARAMETER ADS DESIGN Search Results

    LNA 2.5 GHZ S PARAMETER ADS DESIGN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    LNA 2.5 GHZ S PARAMETER ADS DESIGN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NF041

    Abstract: BFU730F
    Text: AN11006 Single stage 2.3_2.7GHz LNA with BFU730F Rev 3 — 20 November 2012 Application note Info Content Keywords BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE, High linearity. Abstract The document provides circuit, layout, BOM and performance information


    Original     		AN11006 BFU730F BFU730F, BFU730F OM7690/BFU730F NF041 PDF

    BFU790

    Abstract: lna 2.5 GHZ s parameter ads design BFU730 bfu710 BFU760 MurataGRM1555 Miteq BFU790 LNA BFU790F NF 841
    Text: AN11006 Single stage 2.3_2.7GHz LNA with BFU730F Rev 1 — 6 January 2011 Application note Info Content Keywords BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE Abstract The document provides circuit, layout, BOM and performance information on 2.3-2.7 GHz LNA equipped with NXP’s BFU730F wide band transistor.


    Original     		AN11006 BFU730F BFU730F, BFU730F BFU790 lna 2.5 GHZ s parameter ads design BFU730 bfu710 BFU760 MurataGRM1555 Miteq BFU790 LNA BFU790F NF 841 PDF

    AL5100

    Abstract: Alereon AL5100 murata diplexer alereon AL5000 mga-21108 lna 2.5 GHZ s parameter ads design START50 AL5300 LQP15
    Text: Multi-Band IEEE 802.11a/b/g Applications with the Fully Integrated, Matched, Low-Noise MGA-21108 Amplifier Application Note 5436 Introduction A typical multi-band architecture has a series of duplicated Receiver Rx and Transmitter (Tx) chains at the specific


    Original     		11a/b/g MGA-21108 11b/g) ATF-551M4 AL5000 AL5100/AL5300) AV02-2113EN AL5100 Alereon AL5100 murata diplexer alereon lna 2.5 GHZ s parameter ads design START50 AL5300 LQP15 PDF

    TL381

    Abstract: Phycomp 2n7040 ATF-551M4 f551m42o microstripline lna 2.5 GHZ s parameter ads design TL41 TL42 ATF551M4
    Text: High Intercept Point Low Noise Amplifiers for 5.125- 5.325 GHz and 5.725- 5.825 GHz Applications using the ATF-551M4 Enhancement Mode PHEMT Application Note 1337 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low


    Original     		ATF-551M4 ATF-551M4 5988-8609EN TL381 Phycomp 2n7040 f551m42o microstripline lna 2.5 GHZ s parameter ads design TL41 TL42 ATF551M4 PDF

    VMMK-1225

    Abstract: lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B
    Text: VMMK-1225 Using the VMMK-1225 Wafer Scale Packaged Enhancement Mode PHEMT in a Low Noise Amplifier for the 10 to 13 GHz Frequency Range Application Note 5406 Introduction Circuit Topology The VMMK-1225 is a low noise 200 u gate width device using Avago Technologies industry leading Enhancement


    Original     		VMMK-1225 VMMK-1225 VMMK-1225. TL105 TL104 AV02-1511EN lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11382 BFU550A ISM 866 MHz LNA design Rev. 1 — 21 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxA Starter kit


    Original     		AN11382 BFU550A BFU520, BFU530, BFU550 433MHz 866MHz OM7961, BFU550A PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11425 BFU550W ISM 433 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit


    Original     		AN11425 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11426 BFU550W ISM 866 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit


    Original     		AN11426 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11381 BFU550A ISM 433 MHz LNA design Rev. 1 — 21 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxA Starter kit


    Original     		AN11381 BFU550A BFU520, BFU530, BFU550 433MHz 866MHz OM7961, BFU550A PDF

    circuit diagram of hearing aid using transistors

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a


    Original     		ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid AN1222 IMT-2000 JP503 PDF

    ATF-54143 application notes

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a mobile


    Original     		ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier PDF

    ATF-551M4

    Abstract: microstripline LL1608-F1N8S LL1608-FH10NK LL1608-FH1N8S LL1608-FH3N3K TL21 2450 MHz low noise amplifier ADS schematic 2450 MHz low noise amplifier ADS circuit agilent pHEMT transistor
    Text: High Intercept Low Noise Amplifier for 2.4 GHz ISM Applications using the Agilent ATF-551M4 Enhancement Mode PHEMT Application Note 1277 Introduction Agilent Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications


    Original     		ATF-551M4 5988-5290EN ATF-551M4 microstripline LL1608-F1N8S LL1608-FH10NK LL1608-FH1N8S LL1608-FH3N3K TL21 2450 MHz low noise amplifier ADS schematic 2450 MHz low noise amplifier ADS circuit agilent pHEMT transistor PDF

    ATF551M4

    Abstract: ATF-551M4 LL1608-F1N8S LL1608-FH10NK LL1608-FH1N8S LL1608-FH3N3K TL21 2450 MHz low noise amplifier ADS circuit 2450 MHz low noise amplifier ADS circuit schematic
    Text: High Intercept Low Noise Amplifier for 2.4 GHz ISM Applications using ATF-551M4 Enhancement Mode PHEMT Application Note 1277 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 10 GHz


    Original     		ATF-551M4 5988-5290EN ATF551M4 LL1608-F1N8S LL1608-FH10NK LL1608-FH1N8S LL1608-FH3N3K TL21 2450 MHz low noise amplifier ADS circuit 2450 MHz low noise amplifier ADS circuit schematic PDF

    4G base station power amplifier

    Abstract: lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke
    Text: WHITE PAPER Ultra-Low Noise Figure, High Gain Amplifier with High Linearity Introduction Infrastructure receiver applications for cellular/3G, ISM, GPS, WiMAX/4G, automotive applications, and satellite radio require Low-Noise Amplifiers LNAs with very low Noise Figures (NF),


    Original     		01087A 4G base station power amplifier lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke PDF

    an10133

    Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
    Text: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003


    Original     		BB202, BF1107/8 BGA6589 BGA6589. BGA6589 an10133 capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram PDF

    FM radio CIRcuit DIAGRAM

    Abstract: RF MODULE CIRCUIT DIAGRAM dect BGM704N7 C166
    Text: BGM704N7 FM Radio LNA with Integrated RX/TX Switch Data Sheet Revision 2.1, 2010-10-19 Preliminary RF & Protection Devices Edition 2010-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BGM704N7 FM radio CIRcuit DIAGRAM RF MODULE CIRCUIT DIAGRAM dect BGM704N7 C166 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGM704N7 FM Radio LNA with Integrated RX/TX Switch Data Sheet Revision 2.1, 2010-10-19 Preliminary RF & Protection Devices Edition 2010-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BGM704N7 PDF

    Infineon code date marking format

    Abstract: lna 2.5 GHZ s parameter ads design
    Text: BFP520 NPN Silicon RF Transistor • High gain and low noise at high frequencies 3 due to high transit frequency f T = 45 GHz 2 4 • Designed for low voltage applications, 1 ideal for 1.2 V or 1.8 V V CC • Ideal as IF amplifier from 950 - 2150 MHz or LNA in C-Band LNB 3.4 - 4.2 GHz


    Original     		BFP520 OT343 Infineon code date marking format lna 2.5 GHZ s parameter ads design PDF

    41ga

    Abstract: No abstract text available
    Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz Integrated bias control circuit


    Original     		ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 J-STD-20 41ga PDF

    ADL5523

    Abstract: ADL5521-EVALZ ADL5521 900MHZ
    Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz


    Original     		ADL5521 ADL5523 ADL5521 061507-B ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 ADL5523 ADL5521-EVALZ 900MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: 400 MHz to 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz


    Original     		ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R7 ADL5521-EVALZ1 061507-B PR06828-0-7/08 PDF

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


    Original     		BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz Data Sheet Revision 1.1, 2011-03-16 RF & Protection Devices Edition 2011-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGA734L16 TSLP-16-1 TSLP-16-1-PO PDF

    ADL5521/23

    Abstract: No abstract text available
    Text: Preliminary Technical Data Sheet FEATURES 400 MHz to 4000 MHz Low Noise Amplifier ADL5523 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Noise figure of 0.9 dB at 900 MHz Including external input match Gain of 21.5 dB at 900 MHz OIP3 of 35.0 dBm at 900 MHz


    Original     		ADL5521 ADL5523 ADL5523 ADL5523ACPZ-R7 ADL5523-EVALZ1 061507-B PR06829-0-7/08 ADL5521/23 PDF