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    LN2312LT1G

    Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 3000/Tape LN2312LT3G 10000/Tape 195mm 150mm 3000PCS/Reel LN2312LT1G LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G S-LN2312LT1G 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G S-LN2312LT1G 236AB) AEC-Q101 LN2312LT3G S-LN2312LT3G