LN159
Abstract: LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature
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LNA2701L
LN159)
LN159
LN59
LNA2701L
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sr 100/25
Abstract: LN159 LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature
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LNA2701L
LN159)
sr 100/25
LN159
LN59
LNA2701L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%
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LNA2701L
LN159)
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LN159
Abstract: LN59 LNA2701L
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ 26 26 .5 ˚ For light source of VCR (VHS System) .5˚ 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera
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LNA2701L
LN159)
LN159
LN59
LNA2701L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 26 1.3±0.2 0.8 8° 8° 2.8±0.2 2-C0.5 φ1.4±0.2 2-R0.7 1.0 VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature
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LNA2701L
LN159)
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package
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LN159
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Infrared Emitting Diode
Abstract: LN159 LN59
Text: Panasonic Infrared Light Emitting Diodes LN159 G aAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • Two-way directivity • H igh-pow er output, high-efficiency : P Q = 1.8 mW (min.) • Small resin package
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LN159
Infrared Emitting Diode
LN159
LN59
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN159 G aAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • T w o-w ay d irectiv ity • H ig h -p o w e r outp u t, h ig h -efficie n cy : P Q = 1.8 m W (m in.) • S m all re sin pack ag e
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LN159
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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LN124W
P5F02-1
PSF02-1
LN155
LN184
LN189L
PR002-1
PR002-2
LNC703PS
LN9P01S
P50024
LNA4401
PR0022
LN68
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LT3SA
LN9705S
LN7301F
P700
P3002.2
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LN9705
Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LN9705
C3021
mr02
LN9705S
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PR002-2
Abstract: mru2 PR0022
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)
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Plastic50
P5002-1
P5002-Ì
P5002-1N
P5002-2
P3002-1
P3002-2
P5002-4
PR002-2
mru2
PR0022
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2
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LN143
LN122WS
LN122WF
LN124W
LN145W
T0-18
MR02-1
MF02-1
P5F02-2
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