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    LN15 Price and Stock

    Toshiba America Electronic Components TCR2LN15,LF(SE

    LDO REG VOUT=1.5V I=200MA
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    DigiKey TCR2LN15,LF(SE Cut Tape 9,728 1
    • 1 $0.38
    • 10 $0.283
    • 100 $0.1765
    • 1000 $0.09292
    • 10000 $0.07898
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    Avnet Americas TCR2LN15,LF(SE Reel 24 Weeks 10,000
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    • 10000 $0.07038
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    Mouser Electronics TCR2LN15,LF(SE 20,000
    • 1 $0.37
    • 10 $0.256
    • 100 $0.121
    • 1000 $0.091
    • 10000 $0.076
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    Traco Power TXLN 150-124

    AC/DC CONVERTER 24V 151W
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    DigiKey TXLN 150-124 Box 257 1
    • 1 $80.01
    • 10 $75.16
    • 100 $67.8861
    • 1000 $60.01248
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    Mouser Electronics TXLN 150-124 249
    • 1 $79.99
    • 10 $75.15
    • 100 $67.87
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    Bristol Electronics TXLN 150-124 3
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    TME TXLN 150-124 1
    • 1 $77.98
    • 10 $74.21
    • 100 $69.75
    • 1000 $69.75
    • 10000 $69.75
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    AC Electronics ACE-G14LN1555CP

    14W SLIM CASE CONSTANT POWER EME
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    DigiKey ACE-G14LN1555CP Box 97 1
    • 1 $85.99
    • 10 $85.99
    • 100 $85.99
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    AC Electronics ACE-G10LN1555CP

    10W SLIM CASE CONSTANT POWER EME
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    DigiKey ACE-G10LN1555CP Box 96 1
    • 1 $78.57
    • 10 $78.57
    • 100 $78.57
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    Traco Power TXLN 150-112

    AC/DC CONVERTER 12V 150W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TXLN 150-112 Box 25 1
    • 1 $72.8
    • 10 $60.012
    • 100 $60.012
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    Mouser Electronics TXLN 150-112 4
    • 1 $72.8
    • 10 $60.01
    • 100 $60.01
    • 1000 $60.01
    • 10000 $60.01
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    Bristol Electronics TXLN 150-112 3
    • 1 -
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    TME TXLN 150-112 1
    • 1 $77.98
    • 10 $74.21
    • 100 $69.75
    • 1000 $69.75
    • 10000 $69.75
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    Find more LN15 price and stock on Findchips.com

    LN15 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LN15 Samsung Electronics Single Jacket Non-Armored Original PDF
    LN1500 Amplifier Research Low Noise Pre-Amp .1 - 1500 MHz Original PDF
    LN1500M2 Amplifier Research Low Noise Pre-Amp .1 - 1500 MHz Original PDF
    LN150WP38 Panasonic LED, Bi-Color, 565/630nm Wave Length, 2/1.5mcd Intensity Original PDF
    LN150WP38 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN151 Panasonic GaAs Infrared Light Emitting Diodes Original PDF
    LN151F Panasonic GaAs Infrared Light Emitting Diodes Original PDF
    LN151F Panasonic GaAs Infrared Light Emitting Diodes Original PDF
    LN151F Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN151F Panasonic Light Emitting Diodes Scan PDF
    LN151F Panasonic Light Emitting Diodes LED Scan PDF
    LN151L Panasonic GaAs Infrared Light Emitting Diodes Original PDF
    LN151L Panasonic GaAs Infrared Light Emitting Diodes Original PDF
    LN151L Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN151L Panasonic Light Emitting Diodes Scan PDF
    LN151L Panasonic Light Emitting Diodes LED Scan PDF
    LN152 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN152 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN152 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN152 Panasonic Light Emitting Diodes Scan PDF

    LN15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 1. • Features 0. 15 1. 0± ° 2 1 φ5.75 max.


    Original     		PDF LNA2402L LN151L) LNA2403F LN151F)

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1. • High-power output, high-efficiency: PO = 10 mW typ. • Wide directivity, matched for external optical systems: θ = 90°


    Original     		PDF LN152

    L15X60

    Abstract: LN15XB60
    Text: 低ノイズタイプ シングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長


    Original     		PDF LN15XB60 L15X60 25unless J534-1 L15X60 LN15XB60

    LN159

    Abstract: LN59 LNA2701L
    Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature


    Original     		PDF LNA2701L LN159) LN159 LN59 LNA2701L

    LN151F

    Abstract: LN151L
    Text: Infrared Light Emitting Diodes LN151F, LN151L LN151F Unit : mm ø4.6±0.15 Glass window 4.5±0.2 GaAs Infrared Light Emitting Diodes 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 7.5 mW typ. 2.54±0.25


    Original     		PDF LN151F, LN151L LN151F LN151L) LN151F) 100mA LN151L LN151F

    LN151F

    Abstract: LN151L LNA2402L LNA2403F
    Text: Infrared Light Emitting Diodes LNA2403F Unit : mm 4.6 0.15 Glass window 4.5 0.2 LNA2403F, LNA2402L LN151F, LN151L 12.7 min. GaAs Infrared Light Emitting Diodes For optical control systems Features 2- 0.45 0.05 2.54 0.25 1. High-power output, high-efficiency : PO = 7.5 mW (typ.)


    Original     		PDF LNA2403F LNA2403F, LNA2402L LN151F, LN151L) LN151F) LN151F LN151L LNA2402L LNA2403F

    sr 100/25

    Abstract: LN159 LN59 LNA2701L
    Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature


    Original     		PDF LNA2701L LN159) sr 100/25 LN159 LN59 LNA2701L

    duty control

    Abstract: LN155 LNA2603F
    Text: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)


    Original     		PDF LNA2603F LN155) duty control LN155 LNA2603F

    l15x60h

    Abstract: l15x60 LN15XB60H
    Text: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60H Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長


    Original     		PDF LN15XB60H L15X60H 25unless J534-1 l15x60h l15x60 LN15XB60H

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.8) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)


    Original     		PDF LNA2603F LN155)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1.


    Original     		PDF 2002/95/EC) LN152

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN General Purpose Rectifiers LN15XB60H iLow Noise Bridges OUTLINE DIMENSIONS Case : 5S Unit : mm 600V 25A RATINGS Absolute Maximum Ratings (Unless otherwise specified, Tc=25Žj Symbol Conditions @Item Tstg Storage Temperature Tj Operating Junction Temperature


    Original     		PDF LN15XB60H 1mst10ms,

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) LN152

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L 12.7 min. 6.3±0.3 Glass lens GaAs Infrared Light Emitting Diodes 2-φ0.45±0.05 M Di ain sc te on na tin nc ue e/ d For optical control systems 2.54±0.25 100 mA 2 A °C ce /D isc


    Original     		PDF LNA2402L LN151L) LNA2403F LN151F)

    Untitled

    Abstract: No abstract text available
    Text: 低ノイズタイプ シングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長


    Original     		PDF LN15XB60 L15X60

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%


    Original     		PDF LNA2701L LN159)

    L15X60

    Abstract: No abstract text available
    Text: 低ノイズタイプ シングルインライン型 ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：5S Unit : mm Weight：7.1g（typ.） LN15XB60 管理番号（例） Control No.


    Original     		PDF LN15XB60 L15X60 25unless wave50Hz

    l15x60h

    Abstract: L15X60
    Text: 低ノイズタイプ シングルインライン型 ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Unit : mm Weight：7.1g（typ.） Package：5S LN15XB60H 管理番号（例） Control No.


    Original     		PDF LN15XB60H L15X60H 25unless wave50Hz L15X60

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN151F, LN151L Unit : 111111 LN151F ^4.6±0.15 G aAs Infrared Light Em itting Diodes Glass window / - ?in For optical control systems I f 2-0O.45±O.O5 • Features • High-power output, high-efficiency : PQ = 7.5 mW typ.


    OCR Scan     		PDF LN151F LN151F, LN151L LN151L) LN151F)

    GaAs 1000 nm Infrared Diode

    Abstract: GaAs 850 nm Infrared Emitting Diode LN152
    Text: Panasonic Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode U nit : mm For optical control systems \ ! r — i— • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • W ide directivity, m atched for external optical systems : 0 = 100 deg.


    OCR Scan     		PDF LN152 100mA 100mA GaAs 1000 nm Infrared Diode GaAs 850 nm Infrared Emitting Diode LN152

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)


    OCR Scan     		PDF LN155

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package


    OCR Scan     		PDF LN159

    15XB60

    Abstract: No abstract text available
    Text: Bridge Diode Low Noise type Single In-line Package •W IN -äsia Package : 5S OUTLINE DIMENSIONS LN15XB60 Unit : mm 600V 15A 4.6 ±a2 T y p e No. D ate code @ L15X60 45 £1 •S IP ilv tr-V ~r 23 2.5*02 2,7 ±a2 0.7 ±ai 7.5 10*^ CD D .7.5 CD © (« fiL tC D S rö E O L Y C tt, Ü E P tt« £ C !B lS <


    OCR Scan     		PDF LN15XB60 L15X60 15XB60 15XB60

    LN155

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN155 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors XP = 940 nm (typ.)


    OCR Scan     		PDF LN155 LN155