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    LJ MARKING TRANSISTOR Search Results

    LJ MARKING TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    LJ MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMBT2369

    Abstract: np TRANSISTOR smd SOT23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT2369 C-120 CMBT2369 np TRANSISTOR smd SOT23

    np TRANSISTOR smd SOT23

    Abstract: smd transistor marking np CMBT2369
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT2369 C-120 np TRANSISTOR smd SOT23 smd transistor marking np CMBT2369

    DRA2144V0L

    Abstract: No abstract text available
    Text: DRA2144V Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144V Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: LJ


    Original     		PDF DRA2144V DRC2144V UL-94 DRA2144V0L SC-59A O-236ts.

    BFR35AP

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR35AP Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900 MHz • High Gain I S21e I 2 = 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz


    Original     		PDF BFR35AP 500MHz 900MHz BFR35AP

    Untitled

    Abstract: No abstract text available
    Text: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz


    Original     		PDF MMBR920L 500MHz

    npn, transistor, sc 107 b

    Abstract: 2sc low noise NF TRANSISTOR
    Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages 2SC3838K (SMT3) package marking: JO — 2SC3838K; AD^, where ★ is hFE code Lj — 2SC4083; 1D-*, where ★ is hFE code


    OCR Scan     		PDF 2SC3838K 2SC4083 SC-59) SC-70) 2SC3838K; 2SC4083; 2SC3838K 2SC40 2SC3838K, 2SC4083 npn, transistor, sc 107 b 2sc low noise NF TRANSISTOR

    XWs transistor

    Abstract: xws 03
    Text: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C


    OCR Scan     		PDF 10ki2) Q62702-C2354 OT-23 XWs transistor xws 03

    bf579

    Abstract: No abstract text available
    Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion


    OCR Scan     		PDF Q62702-F971 OT-23 0B3Sb05 B235b05 bf579

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1K02FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN1 K02FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2 . 1 ± 0.1 ANALOG SWITCH APPLICATIONS 1. 2 5 + 0.1 *1 e- 2.5 Volts Gate Drive. Low Threshold Voltage : Vth = 0.5~1.5V High Speed


    OCR Scan     		PDF HN1K02FU K02FU 10//S

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE tt-MOSVI / U-MOS H TPC8402 LITHIUM ION SECONDARY BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS U nit in mm PORTABLE DEVICES SOP-8 • nn n Low Drain-Source ON Resistance • P fTRAlNnVTFJ,


    OCR Scan     		PDF TPC8402

    w1p npn

    Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
    Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are


    OCR Scan     		PDF OT-223 priFS17 BFS17A BFT25 BFT92 BFT93 OT-23 OT-89 OT-143 OT-223 w1p npn SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P

    2SA1669

    Abstract: S121 transistor 2S D 716 marking BS
    Text: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure


    OCR Scan     		PDF 2SA1669 2SA1669 S121 transistor 2S D 716 marking BS

    2SK2602

    Abstract: SC-65
    Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : R d S (O N )“ 0.9O (Typ.)


    OCR Scan     		PDF 2SK2602 2SK2602 SC-65

    bc238c

    Abstract: mosfet marking code AL sot-23 S-691
    Text: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier


    OCR Scan     		PDF 569-GS bc238c mosfet marking code AL sot-23 S-691

    BCW31

    Abstract: BCW32
    Text: SEMICONDUCTOR TECHNICAL DATA BCW31/32 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW29/30 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC UNIT SYMBOL RATING Collector-Base Voltage V CBO 30 V


    OCR Scan     		PDF W31/32 BCW29/30 10j/A 10juA BCW31 BCW32 BCW32

    transistor marking zg

    Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
    Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general


    OCR Scan     		PDF CMXT2222A OT-26 150mA, 15nnA OT-26 06-January transistor marking zg npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC42Q7 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2.8 '0 .3 Small Package (Dual Type) High Voltage and High current : VCEO = 50V, I c = 150mA (Max.)


    OCR Scan     		PDF 2SC4207 2SC42Q7 150mA 2SA1618 961001EAA2'

    transistor 6Cp

    Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
    Text: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BC817; BC818 BC807 BC808. BC817 BC817-16 BC817-25 BC817-40 transistor 6Cp 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp

    marking LJ

    Abstract: BF579 60n4
    Text: PNP Silicon RF Transistor • • BF 579 Suitable for low distortion, low noise VHF/UHF amplifier and UHF oscillator applications in TV tuners High transition frequency of 1.6 GHz at typical operating current of 10 mA Type Marking Ordering code for versions in bulk


    OCR Scan     		PDF Q62702-F552 Q62702-F971 marking LJ BF579 60n4

    transistor WL 431

    Abstract: 2N700A BUV pnp 50a MW1131
    Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,


    OCR Scan     		PDF MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131

    marking NC sot23

    Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
    Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications


    OCR Scan     		PDF OT-23 BFS18 BFS19 BFS20 BF840 BF841 BF579 BF536 BF767 BF824 marking NC sot23 smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23

    143-E

    Abstract: D143EK H200
    Text: DTD143EK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD143EK (SMT3) package marking: DTD143EK; F23 a built-in bias resistor allows inverter circuit configuration without external input resistors


    OCR Scan     		PDF DTD143EK SC-59) DTD143EK; DTD143EK 143-E D143EK H200

    Untitled

    Abstract: No abstract text available
    Text: DTB113EK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTB113EK; F11 a built-in bias resistor allows inverter circuit configuration without external input resistors DTB113EK (SMT3)


    OCR Scan     		PDF DTB113EK SC-59) DTB113EK; DTB113EK

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA


    OCR Scan     		PDF 53b320 Q01b744 Q62702-F552 Q62702-F971 20base A23b320 QGlb74b