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    LITTON SOLID STATE Search Results

    LITTON SOLID STATE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    iW3616-00 Renesas Electronics Corporation Flickerless™ High PF (>0.95), Off-Line LED Driver for 12W Dimmable Solid-State Lighting Visit Renesas Electronics Corporation
    iW3602-30C Renesas Electronics Corporation 10W Off-Line LED Driver for Dimmable Solid State Lighting, Single-Stage Visit Renesas Electronics Corporation
    iW3612-05 Renesas Electronics Corporation 25W Off-Line LED Driver for Dimmable Solid State Lighting Visit Renesas Electronics Corporation
    iW2206-11 Renesas Electronics Corporation Power Factor Boost Controller for Solid State Lighting Solutions up to 250W Visit Renesas Electronics Corporation
    iW3602-01 Renesas Electronics Corporation 10W Off-Line LED Driver for Dimmable Solid State Lighting, 1.5 Stage Visit Renesas Electronics Corporation
    iW3614-00 Renesas Electronics Corporation High PF, Off-Line LED Driver for 3W-15W Dimmable Solid State Lighting Visit Renesas Electronics Corporation

    LITTON SOLID STATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    litton cpu

    Abstract: MX 232 military multichip litton military mcm cpu MCP-96 cpu guidance litton mcm military mcm I960 mx
    Text: MILITARY MULTICHIP MODULES LITTON GUIDANCE & CONTROL SYSTEMS i960 MC/MX CPU Computers Using Silicon Substrate MCMs • ■ ■ ■ ■ ■ ■ ■ ■ ■ 10-38 MIPs Microminiaturized Computers With Processor, Memory and I/O in Pin-Compatible Multichip


    Original     		PDF MCP96) MXP-96) 16-Bit RS-232 MXP-96 MCP-96 litton cpu MX 232 military multichip litton military mcm cpu cpu guidance litton mcm military mcm I960 mx

    elmwood sensors ltd

    Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
    Text: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this


    Original     		PDF BMIC/Ele03 elmwood sensors ltd elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion


    OCR Scan     		PDF 5S44SDD 0GDG524 LF6872 18GHz LF6872 2285-C

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE D • S£L»4EOO DQ0G533 Sflfl ■ L I T T Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +33 dBm Typical Output Power @ 8GHz ■ 6 dB Typical Compressed Gain @ 8GHz -


    OCR Scan     		PDF DQ0G533 LF3850 2285-C

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE » 5S4M20D D0GGS3D 5 7 e] Litton IL IT T 7 - J 7 -P 5 - LF3830 1 Watt Power GaAs FET Solid State FEATURES • + 31.5 dBm Typical Output Power @ 8 GHz • 7 dB Typical Compressed Gain @ 8 GHz • 0.5 Micron Ti/Pt/Au Recessed Gate


    OCR Scan     		PDF 5S4M20D LF3830 LF3830 8510B

    Untitled

    Abstract: No abstract text available
    Text: l I T T °N ÏNB/LITTON SOLI» Litton SbE D • 55442GG 00004^5 b44 ■ LITT PRODUCT ANNOUNCEMENT Solid State Division 140 GHz InP GUNN DIODE • LOW COST POWER AT VERY HIGH FREQUNCY • RELIABLE SOLID STATE POWER SOURCE • HIGH EFFICIENCY, LOW VOLTAGE AND CURRENT


    OCR Scan     		PDF 55442GG LST-9123S1 T-9123S 123S3

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z


    OCR Scan     		PDF SS442DD D-6828 D-6828 2285C

    Untitled

    Abstract: No abstract text available
    Text: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z


    OCR Scan     		PDF SSM42GD D-2501 D-2501 2285C

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1


    OCR Scan     		PDF 554M200 D-3501 D-3501 2285C

    litton

    Abstract: Litton Solid State
    Text: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I


    OCR Scan     		PDF D-3501 2285C litton Litton Solid State

    Litton LN-200

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID Litton SbE D • 5S44E00 00DDS2Ö RIO ■ L I T T Dual G a te M icrow ave GaAs FET Electron Devices D-2730 Preliminary Specifications FEATURES MAG 16 d B 18 GHz - Noise Figure 2.5 dB @ 45 18 Ghz » - 430 50- t 45 t 50 Gain at NF 13 dB @ 18 Ghz


    OCR Scan     		PDF 5S44E00 00DDS2Ã D-2730 30CVn D-2730 2285C Litton LN-200

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz


    OCR Scan     		PDF D-6836 D-6836 amplifie07 2285C

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells


    OCR Scan     		PDF D-3814 D-3814 2285C

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability


    OCR Scan     		PDF 100nsec.

    TRANSISTOR A107

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature


    OCR Scan     		PDF 5S4M200 DG0DS12 D-2704 340nm D-2704 2285C TRANSISTOR A107

    litton

    Abstract: Litton Solid State D-0777 ultra low noise 12GHz radar 77 ghz receiver
    Text: LITT ON I N D / LI TT ON SOLID SbE D S5 4 M B 0 Q 0[][]055b 04fi « L I T T Litton Ultra Low-Noise M ic ro w a v e G aA s FET Electron Devices D-0777 Preliminary Specifications 440 FEATURES 280 • Noise Figure 1.9 dB @ < 46 I 18 g h z Y77A ■ Gain at NF 8 dB @ 18 GHz


    OCR Scan     		PDF S54MB0Q D-0777 D-0777 2285C litton Litton Solid State ultra low noise 12GHz radar 77 ghz receiver

    Untitled

    Abstract: No abstract text available
    Text: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate


    OCR Scan     		PDF SS442GD D-2503 D-2503 2285C

    S3V 83

    Abstract: S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92
    Text: LI T T O N I N D / L I T T O N SO LI » Linon SbE D • SSMMHDG OQGOSOM 4Ö7 « L I T T Low-Noise M icrow ave GaAs FET Electron Devices D-1503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 2.6 dB @ 18 GHz 94 Y777\ DRAIN ■ Gain a t NF 6.5 dB @ 18 GHz


    OCR Scan     		PDF D-1503 D-1503 2285C S3V 83 S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92

    transistor af18

    Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
    Text: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77


    OCR Scan     		PDF 55M42DD D-2503 D-2503 devices26 2285C transistor af18 litton Litton Solid State Solid State Microwave C band FET transistor s-parameters

    litton

    Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
    Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z


    OCR Scan     		PDF SSM42GD D-2501 I--190- D-2501 2285C litton Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG RF FET TRANSISTOR 3 GHZ VDS35 55M4S

    Untitled

    Abstract: No abstract text available
    Text: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z


    OCR Scan     		PDF D-3807 D-3807 2285C

    Diode LT 9250

    Abstract: LT 9250 0/Diode LT 9250
    Text: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		PDF -3-48UNC-2A Diode LT 9250 LT 9250 0/Diode LT 9250

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		PDF 554M5D0 000G503 N57/N58

    D2502

    Abstract: No abstract text available
    Text: U lH ’ON IN D /L IT TO N SOLID il I I A I I I 5bE D • 5 5 4 4 2 0 0 DGDD5GÛ DES ■ L I T T Low Noise/Medium Power Microwave G aA s FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -250► 40 - Noise Figure 2.2 de @ 8 [77777 ghz


    OCR Scan     		PDF D-2502 IT777JlY///h77mh D-2502 2285C D2502