MM74C14N
Abstract: No abstract text available
Text: Semiconductor February 1988 MM54C14/MM74C14 Hex Schmitt Trigger General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono lithic complementary MOS CMOS integrated circuit con structed with N- and P-channel enhancement transistors.
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MM54C14/MM74C14
005V/Â
MM74C14N
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2090-4050
Abstract: ICL8211 LM199
Text: Intersil High-Reliability Products ICL8211/ICL8212 High Reliability Programmable Voltage Detector GENERAL DESCRIPTION FEATURES The Intersil ICL8211/8212 are micropower bipolar mono lithic integrated circuits intended primarily for precise volt age detection and generation. These circuits consist of an
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ICL8211/ICL8212
ICL8211/8212
ICL8212
LM199
LM199
ICL8211
ICL8212â
2090-4050
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USSR
Abstract: h574 Scans-048 DSAGER00026 K ussr
Text: GENERAL DESCRIPTION The K574yjU high slew rate mono lithic operational amplifier is a versatile device, a result of significant improvement of the high-performance K14oyH8 op amp's response characteristics. The K574yjU has an offset null circuit and external compensation. The
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K574yjU
K14oyH8
K574YH1
USSR
h574
Scans-048
DSAGER00026
K ussr
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EDI88128C
Abstract: No abstract text available
Text: EDI88128C W D\ 128Kx8 Monolithic ELECTRONIC DESIGNS, INC. Static Ram 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.
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EDI88128C
128Kx8
EDI88128C
EDI88130C
100ns
EDI88128)
EDI88130)
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Untitled
Abstract: No abstract text available
Text: TD62301F TD62302F BIPO LAR DIGITAL INTEGRATED C IR C U IT SILICO N M O NO LITHIC TD62301F LOW SATURATION DRIVER TD62302F . LOW SATURATION DRIVER Features . Low Saturation Outputs . VcE sat = 0.7V Max. @ IOUT=150raA . Output Rating . 15V/200mA
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TD62301F
TD62302F
TD62301F
150raA
5V/200mA
TD62302F
TD62301F,
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI88128C 128Kx8 Monolithic Static Ram EkfCIROMC DESGNS. N C 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.
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EDI88128C
128Kx8
100ns
EDI88128)
EDI88130)
EDI88128C
EDI88130C
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Untitled
Abstract: No abstract text available
Text: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen eral purpose silicon NPN transistors on a common mono lithic substrate. Two of the transistors are internally con
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LM3045/LM3046/LM3086
LM3045,
LM3046
LM3086
LM3045
14-lead
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. 'W TC7662B DC-TO-DC VOLTAGE CO NVERTER FEATURES GENERAL DESCRIPTION • The TC7662B DC-to-DC Voltage Converter is a mono lithic CMOS voltage conversion IC that guarantees signifi cant performance advantages over other similar devices. It
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TC7662B
ICL7660
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8212C
Abstract: ICL8211 ICL8211MTY ICL8212 ICLS212 ICU211 1121 diode LED LG high voltage diodes schematic diagram tv sharp ICL8212MTY
Text: Intersil Hlgh-Reliabllity Products ICL8211/ICL8212 High Reliability Programmable Voltage Detector GENERAL DESCRIPTION FEATURES The Intersil ICL8211/8212 are micropower bipolar mono lithic integrated circuits intended primarily for precise volt age detection and generation. These circuits consist of an
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ICL8211/ICL8212
ICL8211/8212
ICL8212
LM199
ICL8211
ICL8212"
8212C
ICL8211MTY
ICLS212
ICU211
1121 diode LED LG
high voltage diodes
schematic diagram tv sharp
ICL8212MTY
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NE612N
Abstract: NE612 49mhz cordless telephone NE612 equivalent NE614 Cordless telephone 49mhz high power hartley oscillator ne614 Colpitts parallel-mode tank circuit mosfet vhf power amplifier
Text: Signetìcs NE612 Double-Balanced Mixer and Oscillator Product Specification Linear Products PIN CONFIGURATION DESCRIPTION FEATURES The NE612 is a low-power VHF mono lithic double-balanced mixer with on board oscillator and voltage regulator. It is intended for low cost, low power
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NE612
NE612
500MHz
200MHz.
49MHz.
49MHz
1000pf
V210S
NE612N
49mhz cordless telephone
NE612 equivalent
NE614 Cordless telephone
high power hartley oscillator
ne614
Colpitts parallel-mode tank circuit
mosfet vhf power amplifier
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TO SHIBA CIRCUIT TECHNICAL TC74LVQ245F, TC74LVQ245FW TC74LVQ245FS DATA SILICON M O NO LITHIC OCTAL BUS TRANSCEIVER The TC74LVQ245 is a high speed CMOS OCTAL BUS TRANSCEIVER fabricated w ith silicon gate and d ou b le
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TC74LVQ245F,
TC74LVQ245FW
TC74LVQ245FS
TC74LVQ245
LVQ245F,
SOL20-P-300-1
TC74LVQ245F
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32R2020R
Abstract: No abstract text available
Text: SSI 32R2320/21/22/23/24 ¿ihm systems 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK G roup/C om pany December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono lithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise
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32R2320/21
32R2320/21/22/23/24
32R2324W-4CV.
1294-rev.
32R2020R
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA M o n o lithic Dual S w itching Diode MMBD6 1 0 0 LT1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage vR Vdc Forward Current if mAdc iFM(surge) 70 200
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MMBD6100LT1/D
OT-23
O-236AB)
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NE604AD
Abstract: NE604AN SA604AN ne604 455khz NE605 equivalent
Text: Signetics NE/SA604A H igh-Perform ance Low-Power FM IF System Preliminary Specification Unear Products DESCRIPTION The NE/SA604A is an improved mono lithic low-power FM IF system incorpo rating two limiting intermediate frequen cy amplifiers, quadrature detector, mut
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NE/SA604A
NE604A
SA604A
NE/SA604A
25MHz)
NE/SA604.
16-lead
NE604AD
NE604AN
SA604AN
ne604 455khz
NE605 equivalent
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Untitled
Abstract: No abstract text available
Text: HFA3664 HARRIS S E M I C O N D U C T O R PRELIMINARY 2.7GHz UpConverter with Gain Control June 1997 Description Features RF Frequency Range. 2.3GHz to 2.7GHz The HFA3664 UpConverter with Gain Control is a mono lithic bipolar device for up con
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HFA3664
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Untitled
Abstract: No abstract text available
Text: MM54C42/MM74C42 BCD-to»-Decimal Decoder General Description The MM54C42/MM74C42 one-of-ten decoder is a mono lithic complementary MOS CMOS integrated circuit con structed with N- and P-channel enhancement transistors. This decoder produces a logical “ 0” at the output corre
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MM54C42/MM74C42
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mb3759
Abstract: d16011
Text: ASSP Pulse-Width-Modulation Control Circuit MB3759 PULSE-WIDTH-MODULATION CONTROL CIRCUIT PUSH-PULL/SINGLE-ENDED OUTPUT MODE The Fujitsu MB3759 is complete pulse-width modulation control system on a single mono lithic chip. The MB3759 consists of an internal 5.00V reference, two or-connected ampli
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MB3759
MB3759
200mA
F9703
d16011
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TXM AX-1
Abstract: ax-1 txm ax-1S txm
Text: HFA3663 HARRIS S E M I C O N D U C T O R PRELIMINARY 2.3GHz UpConverter with Gain Control June 1997 Description Features RF Frequency Range. 2.0GHz to 2.3GHz The HFA3663 UpConverter with Gain Control is a mono lithic bipolar device for up con
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HFA3663
TXM AX-1
ax-1 txm
ax-1S txm
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AN-90
Abstract: MM54C42 MM54C42J MM74C42 MM74C42J
Text: MM54C42/MM74C42 BCD-to•-Decimal Decoder General Description The MM54C42/MM74C42 one-of-ten decoder is a mono lithic complementary MOS CMOS integrated circuit con structed with N- and P-channel enhancement transistors. This decoder produces a logical “ 0” at the output corre
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MM54C42/MM74C42
AN-90
MM54C42
MM54C42J
MM74C42
MM74C42J
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MM74C14J
Abstract: AN-90 MM54C14 MM74C14 MM74C14N
Text: February 1988 M M 54 C 1 4/M M 74 C 14 Hex Schm itt T rig g er General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono lithic complementary MOS CMOS integrated circuit con structed with N- and P-channel enhancement transistors.
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MM54C14/MM74C14
005V/Â
MM74C14J
AN-90
MM54C14
MM74C14
MM74C14N
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC74VHC03F/FN/FT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M O NO LITHIC TC74VHC03F, TC74VHC03FN, TC74VHC03FT Note The JEDEC SOP (FN) is not available in QUAD 2 -INPUT NAND GATE (OPEN DRAIN) Japan The TC74VHC03 is an advanced high speed CMOS 2-INPUT
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TC74VHC03F/FN/FT
TC74VHC03F,
TC74VHC03FN,
TC74VHC03FT
TC74VHC03
TC74VHC00.
an4VHC03F/FN/FT
14PIN
200mil
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3B115
Abstract: 3B117
Text: SSI 32R2320/21/22/23/24 ¿mmsifskms' 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono lithic integrated circuit designed tor use with twoterminal recording heads. They provide a low noise
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32R2320/21/22/23/24
32R2324W-4CV.
3B-120
3B115
3B117
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers
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uPA103
PA103B:
PA103G:
/iPA103
14-pin
PA103
14-pin
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Untitled
Abstract: No abstract text available
Text: SSI 32R2320/21/22/23/24 mmMktns' 3V, 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1994 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS mono lithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise
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32R2320/21/22/23/24
32R2320/21/22/23/24
32R2324W-4CV.
3B-120
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