TQP7M9104
Abstract: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603
Text: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3
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TQP7M9104
24-pin
TQP7M9104
700-placing
11Disclaimer:
Nelco N4000-13
0603CS-R12XJL
b919
recommended land pattern for 6032 cap
jedec 0603
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7M9102
Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
Text: TQP7M9102 ½W High Linearity Amplifier Applications • • Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz
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TQP7M9102
OT-89
TQP7M9102
7M9102
schematic diagram 800 watt power amplifier free d
TM164
TM1-64
TQP7M9
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TQM8M9074
Abstract: Z11 Marking Code
Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality
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TQM8M9074
20-pin
TQM8M9074
Z11 Marking Code
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Untitled
Abstract: No abstract text available
Text: OPA688 OPA 688 OPA 688 For most current data sheet and other product information, visit www.burr-brown.com Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING
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OPA688
530MHz
OPA689
OPA688
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Untitled
Abstract: No abstract text available
Text: TQP4M9072 High Linearity 6-Bit, 31.5dB Digital Step Attenuator Applications • Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and RF Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package 3
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TQP4M9072
24-pin
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WiMAX transceivers
Abstract: ah225
Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz
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AH225
AH225
WiMAX transceivers
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Untitled
Abstract: No abstract text available
Text: CV110-2A Cellular-band High Linearity Downconverter IF IN GND 26 IF THRU GND 27 GND RF IN 28 25 24 23 22 RF OUT 1 GND 2 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 17 BIAS GND 6 16 GND RF/IF 10 11 12 13
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CV110-2A
CV110-2A
JESD22-C101
J-STD-020
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7
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AH420
AH420
1-800-WJ1-4401
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TRANSISTOR Marking XB PNP
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity
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YTS3906
-50mA,
YTS3904
300ne
TRANSISTOR Marking XB PNP
YTS3906
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2sc1173
Abstract: 2SA473
Text: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.
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2SC1173
2SA473
O-220AE
Ic-10mA,
2sc1173
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TLC5602
Abstract: 8 bit digital to analog converter
Text: TLC5602 LinEPIC" 8 BIT DIGITAL TO-ANALOG CONVERTER D 3 2 2 4 , FEBRUARY 1989 • 8-Bit Resolution • ± 0 .2 % Linearity • Maxim um Conversion Rate . . . 3 0 MHz Typ 2 0 M Hz Min D U A L-IN -LIN E P AC KAG E {TO P VIE W Analog Output Voltage Range of
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TLC5602
TLC5602
8 bit digital to analog converter
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2N4403
Abstract: No abstract text available
Text: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage
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2N4403
-100nA
100nA
-150mA,
-15mA
2N4401
X10-4
2N4403
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2SC3297
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25
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2SA1305
2SC3297
2SC3297
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage
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2SC3671
Q55-Q0S
10tnA,
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54HC4016
Abstract: n12110 C4016
Text: SN54HC4016, TLC4016I SILICON-GATE CMOS QUADRUPLE BILATERAL ANALOG SWITCH 0 2 9 2 2 . J A N U A R Y 1986 SN 5 4 H C 4 0 1 6 . . . J O R N P A C K A G E TLC4016I . . . D OR N PA C KA G E High Degree of Linearity High On-Off Output Voltage Ratio TOP VIEW Low Crosstalk Between Sw itches
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SN54HC4016,
TLC4016I
TLC4016I
54HC4016
n12110
C4016
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2SC4658
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A
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2SC4658
2SA1794
Ta-25
2SC4658
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Untitled
Abstract: No abstract text available
Text: sse • d flui?a3 ODflbiflfl t SNS4HC4066, TLC4066I SILICQN-GATE CMOS QUADRUPLE BILATERAL ANALOG SWITCH TEXAS INSTR LOGIC 02922, JANUARY 1988 High Degree of Linearity SN64HC4066 . . . J OR N PACKAGE T L C 40 66 I. . . D OR N PACKAG E • High On-Off Output Voltage Ratio
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SNS4HC4066,
TLC4066I
MM54/74HC4066,
MC54/74HC4066,
CD4066A
TLC4066
SN54HC4066,
T-51-11
--V02
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Untitled
Abstract: No abstract text available
Text: SN74HC4066 QUADRUPLE BILATERAL ANALOG SWITCH _ S C L S 3 2 6 A -M A R C H 1 9 9 6 - REVISED JULY 1996 • High Degree of Linearity • High On-Off Output Voltage Ratio • Low Crosstalk Between Switches • Low On-State Impedance —
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SN74HC4066
300-mil
CLS325A
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Untitled
Abstract: No abstract text available
Text: 2SC4116 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 16 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VcEO = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (Ic = 0.1mA) / hpg (Ic = 2mA) = 0.95 (Typ.)
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2SC4116
150mA
2SA1586
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Untitled
Abstract: No abstract text available
Text: TL5501 6 BIT ANALOG-TO-DIGITAL CONVERTER D 3 16 3 , OCTOBER 1 9 8 8 -R E V IS E D APRIL 1990 N PACKAGE 6-Bit Resolution TOP VIEW Linearity Error . . . ± 0 .8 % (LSB) D OC 1 U l 6 "2 GND Maximum Conversion Rate . . . 3 0 M Hz Typ Analog Input Voltage Range . . .
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TL5501
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2N3789
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ- Ü b ï>Ëf| L O T T E S O □□OflDEb 9097250 TOSHIBA <DISCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE_ POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR Unit in mm APPLICATIONS. 60MAX. 2*81.0 MAX FEATURES: -h . High Gain and Excellent h^E Linearity:
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60MAX.
TDT7250
2N3789
2N3789
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2sa1793
Abstract: 2sc4657
Text: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)
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2SA1793
2SC4657.
--50V,
--10mA,
2sa1793
2sc4657
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Untitled
Abstract: No abstract text available
Text: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)
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2SC4707
300mA)
2SA1811
100mA
300mA
300mA,
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2SA1792
Abstract: No abstract text available
Text: 2SA1792 SILICON PNP EPITAXIAL TYPE U nit in mm STOROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • 7.2MAX 3.0 £3: Excellent hjrE Linearity : hpE = 100~320 Vç e = —2V, I q = - 1A Low Saturation Voltage : V çE(sat)= —0.5V (Max.) at I q = —8A
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2SA1792
2SA1792
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