Untitled
Abstract: No abstract text available
Text: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.
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A60FI
STH12NA60/FI
STW12NA60
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Untitled
Abstract: No abstract text available
Text: SbE D • rzj •JM. 7^237 GOMGQb? ■SGTH SCS-TH OM SON 6* i[LiCT[iMS0 S S 6 S-THOMSON M54HC242/243 M74HC242/243 T- S z -a -o s QUAD BUS TRANSCEIVER 3-STATE PRELIMINARY DATA ■ HIGH SPEED tpD = 10 ns (TYP.) at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 4 /iA (MAX.) at TA = 25°C
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M54HC242/243
M74HC242/243
M54HCXXX
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Untitled
Abstract: No abstract text available
Text: fZT SGS-THOMSON A T / . M g^(s l[LiCT[i«[] S_ M S C 8 12 5 0 M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACT0RYV30LD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE
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REFRACT0RYV30LD
MSC81250M
MSC81250M
J11321AF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 3 2 N 5657 IMDeiRi i[LiCTI ®[i!lDS$ SILICON NPN TR A N SISTO R . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current,
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2N5657
OT-32
-r-55
2N5657
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BUX87 HIGH VOLTAGE SILICON POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY 450V V c e o MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . HIGH DC CURRENT GAIN APPLICATIONS
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BUX87
BUX87
GC51050
OT-32
O-126)
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74LVQ244
Abstract: 74LVQ244M 74LVQ244T LVQ244 S020 GI 448
Text: ¿57 SGS-THOMSON lICTIfMOœ s 74LVQ 244 LOW VOLTAGE OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON-INVERTED . HIGHSPEED: tPD = 6 ns (TYP.) at Vcc = 3.3V . INPUT & OUTPUT TTL COMPATIBLE LEVELS • LOW POWER DISSIPATION: Icc = 4 |iA (MAX.) at T a = 25 °C ■ LOW NOISE:
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74LVQ244
LVQ244
P013L
74LVQ244
74LVQ244M
74LVQ244T
S020
GI 448
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NF 831
Abstract: No abstract text available
Text: N U lICt Département COAXIAL ItCHNIQUÊ TECHNICAL ZM M 931*6 DATA - TA M phon* T IT L E T IT R E N-F / LC _ f - R 191.741 NF/LC.FADAPTOR, Séria . ^DAPTnrr N O R M A LISA TIO N IE C : _ CECC : _ SPECIFICATIONS M IL CABLES CABLES PROPERTIES
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12N05L
Abstract: 748U STK12N
Text: SGS-THOMSON ’[LiCTïMOOS * t7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK 12N 05L S TK12N 06L . . . . . . . V dss R D S o n Id 50 V 60 V 0 .1 5 U 0 .1 5 Q 12 A 12 A AVALANC HE RUG G EDNESS TECHNO LO G Y
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STK12N05L
STK12N06L
TK12N
OT-82
OT-194
STK12N05L/STK12N06L
12N05L
748U
STK12N
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Untitled
Abstract: No abstract text available
Text: S = 7 SGS-THOMSON * 7 # 5»ligR [i[LICTR B!IO DS B Y 2 1 4 - 5 0 —» 1 0 0 0 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP VBSOLUTE RATINGS (limiting values Symbol P aram eter V alu e Unit A verage F o rw ard C urre n t*
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6H20
Abstract: t082
Text: RoHS Sn63%, Pb37% No No Sn96%, Ag4% Yes Yes LF1 TERM. NO.’s FOR REF. ONLY I CUSTOM ER TERMINAL LÜ Lü Lict:_ _Q CL Q _Lü< I SO LDER SUFFIX * DIMENSION MAY BE EXCEEDED WITH SOLDER ONLY .430 MAX. [10.92] .360 MAX.* [9.14] <§> .385 MAX. [9.78] n 2 O m o
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10kHz,
40435R/-LF1
6H20
t082
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VNH70N07
Abstract: No abstract text available
Text: rz7 ^7# SGS-THOMSON ¡Mn<E[Mi|[LiCTiF3 öl@ VNH70N07 ’’OMNIFET”: _ FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 . . . . . . . . . . Vclamp R D S o n llim 70 V 0.015 n 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNH70N07
VNH70N07
O-218
O-218
DD77D14
OT-93)
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VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07
Abstract: 10n07 VNP10N
Text: ¿5 7 TY P E VNB10N07 VNK10N07FM VNP10N 07FI VNV10N07 S G S -T H O M S O N VN B 10N07/K 10N07FM :LICTIB@10 i VN P10N07FI/VN V10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET RDS on Vciamp 70 70 70 70 V V V V 0.1 n 0.1 n 0.1 n 0.1 a lllm 10 10 10 10
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VNB10N07
VNK10N07FM
VNP10N
VNV10N07
VNB10N07,
VNK10N07FM,
VNP10N07FI
VNV10N07
VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07
10n07
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP55/56 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP55/56
BCP52
BCP53
OT-223
P008B
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Untitled
Abstract: No abstract text available
Text: 3DE D • 7=12^37 GD31ÜMS fi WM 'T -3 5 'I°T f Z 7 SGS-THOMSON Ä 7 # 5 _[LICT[i»0ûS s BSX28 G S - T H O M S O pT HIGH-SPEED SATURATED SWITCH DESCRIPTIO N The BSX28 is a silicon planar epitaxial NPN transi stor in Jedec TO-18 metal case. It is designed
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BSX28
BSX28
Pow120
DQ31D47
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP52/53 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP52/53
BCP55
BCP56
OT-223
P008B
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mje520
Abstract: No abstract text available
Text: • 7 ^ 5 3 7 0Qgq067 s g s - th o m 3 ■ *T s o n m je 3 ?o D [^@i[LiCT^ ô iD(gl_ S G S - T H OM S ON 3DE M JE520 D COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTIO N The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec
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0Qgq067
JE520
MJE370
MJE520
O-126
12t5237
T-33-09
mje520
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Untitled
Abstract: No abstract text available
Text: r All rights strictly reserved. Reproduction or issue to third porties in any form whatever is not permitted without written authority from the proprietor. Property o f B E R C ELECTRONICS Tous droits strictement reserves. • LICTKON ICS Reproduction ou communication a des tiers interdite
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Untitled
Abstract: No abstract text available
Text: r NI rights strictly reserved. Reproduction or issue to third porties in ony form whatever is not permitted without written Authority from the proprietor. Property of BERG ELECTRONICS BERG U * LICTftONICS Copyright BERG ELECTRONICS INC. CD Tous droits strictement reserves.
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Untitled
Abstract: No abstract text available
Text: , • , V . „• M TM M -114 -0 5 -T -Q -2 2 5 * N » . M TM M -108-O 7-G -C - 200 -j ’ Mates with: CLT. SQT SQW, ESQ _E. SMM, MMS, 1 CSD Materials: ‘X - f'i- . * ’.vs.'1 Choice Of single, double or quo# ro w Insulator Material: Black Lictuld Crystal Polymer
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-108-O
-653C
1-800-SAMTEC-9
7392S2-
85-0-Fax:
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Untitled
Abstract: No abstract text available
Text: jtà i M a n A M P <c o m p a n y E-Series 2-Way 0° Power Divider 0.25 - 300 MHz ES-2-1 -75 V3.00 Features R-2 TOP VIEW • 2 W ay • / 0° LIcTTEKB »FC1 QVHR P1K 2 Specifications @ 25 ° c 's Frequency Range SC \ NCCE : PIN NUMBERS LiO WOT ÄIPPES'R ONI UNIit.
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Untitled
Abstract: No abstract text available
Text: I LF1 No No Y es Yes 7CR TERM. 6H U AV eoe U AV N O .’ s FOR REF. ONLY T ~ I Í I 4 3 z n 5 2 z a 6 1 z n ~ T LÜ Ld Lict:_ Pb37% S n96% , Ag4% _Q CL Q Sn63% , RoHS < CUSTOMER TERMINAL _LdI SOLDER SUFFIX I DOT LOCATES TERM. #1 0 (6 D ) L D O T /C H A M FE R
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LXT441.
E99406
671-7876R/-LF1
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JIS B 0209 general
Abstract: PW01 SCR PNPN CH85 S12XXX S12XXXH
Text: r z 7 SGS-THOMSON ^ 7 # K LICTH0HC1 S12XXXH SCR FEATURES =12A > V drm=200V to 800V • High surge current capability ■ It rm s DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
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S12xxxH
T0220
7c12ti237
D070144
JIS B 0209 general
PW01
SCR PNPN
CH85
S12XXX
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DD 127 D TRANSISTOR
Abstract: transistor DD 127 D M22100B1
Text: r z 7 * 7 # S G S -1 H M S 0 N [LiCTIiMOOS R M22100 4 X 4 CROSSPOINT SWITCH WITH CONTTROL MEMORY > LOW ON R E S IS T A N C E - 75 Q. TYP. AT V dd = 12 V . • . ■ ’’BUILT-IN” CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY ± V Dd/2 TRANSMITS SIGNALS UP TO 10 MHz
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M22100
PLCC20
DD 127 D TRANSISTOR
transistor DD 127 D
M22100B1
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marking BM
Abstract: "MARKING BM" SOD-6 PACKAGE
Text: Æ T S C S -T H O M S O N Bffln »iiuieTMì!iiie§ » [¡[LICTMDiêi SMTPA SERIES TRISIL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. ■ HOLDING CURRENT = 150 mA mln ■ PEAK PULSE CURRENT: Ipp = 50 A, 10/1000 us.
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VDE0433
marking BM
"MARKING BM"
SOD-6 PACKAGE
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