Untitled
Abstract: No abstract text available
Text: LH53CV32P00 FEATURES • 4,194,304 x 8 bit organization Byte mode: BYTE = VIL 2,097,152 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: – Operating: 100 mA (MAX.)
|
Original
|
PDF
|
LH53CV32P00
48-pin
LH53CV32P00
32M-bit
silicon-gaCV32P00
48TSOP
TSOP048-P-1218)
48-pin,
|
LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
|
OCR Scan
|
PDF
|
109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
|
Untitled
Abstract: No abstract text available
Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time
|
OCR Scan
|
PDF
|
28kx8
128kx
256kx
LH53H4000
LH532600
LH532000B-1
LH531000B
LH532000B
LH534600C
LH534P00B
|
IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
|
OCR Scan
|
PDF
|
ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
|
Untitled
Abstract: No abstract text available
Text: CMOS 32M 4M x 8/2M x 16 MROM FEATURES • 4,194,304 x 8 bit organization (Byte mode: BŸTË = V,L) 2,097,152 x 16 bit organization (Word mode: BYTE = V,H) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: -O p e ra tin g : 100 mA (MAX.)
|
OCR Scan
|
PDF
|
48-pin
D15/A_
LH53CV32P00
48TSOP
TSOP048-P-1218)
LH53CV32PQQ
48-pin,
TSQP048-P-1218)
LH53CV32P00T
|
Untitled
Abstract: No abstract text available
Text: CMOS 32M 4M x 8/2M x 16 MROM 2,097,152 x 16 bit organization (Word mode: BYTE = V,H) 48-PIN TSOP (Type I) BYTE C • Supply current: - Operating: 100 mA (MAX.) -S ta n d b y : 15 0 |iA (M A X .) d7 44 □ D 14 A i2 IZ 6 / 43 □ d6 42 Z l d 13 41 □ d5
|
OCR Scan
|
PDF
|
48-pin
53CV32P00-3
LH53CV32P00
LH53CV32P00
48-pin,
TSOP048-P-1218)
LH53CV32P00T
|
IR2E27A
Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080
|
OCR Scan
|
PDF
|
Core28
IR2C24A/AN
IR2C26
IR2C30/N
IR2C32
IR2C33
IR2C34
IR2C36
IR2C38/N
IR2C43
IR2E27A
IR2C53
IR2E02
IR2E27
IR2E10
IR3N34
IR2E31A
IR2E01
IR2C07
ir2e31
|
LHMD09
Abstract: No abstract text available
Text: MEMORIES ★ U nderdevelopm ent • Page Mode Specification Mask ROM Specific Pinout • 3 .3 V operation B it C apacity configuration 8M 16M x 8/x 16 x 8/x 16 x 16/x 32 x 8/x 16 32M x 16/x 32 64M x 16/x 32 128M x 16/x 32 Model No. LH53BV8600D/N LH53BV8600T
|
OCR Scan
|
PDF
|
LH-5D86XX
LH-5D80XX
LH-ME78XX
LH-MD79XX
LH-ME58XX
LH-ME53XX
LH-MD50XX
LH-MD57XX
LH-MD09XX
LH-MD19XX
LHMD09
|