LH5168ST
Abstract: No abstract text available
Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 500 ns (MAX.) • Power consumption: Operating:
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28-pin,
LH5168ST
28-PIN
LH5168ST
TSOP28-P-0813)
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LH5168ST
Abstract: SHARP 357
Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. II is fabricated using silicon-gate CMOS process technology. • Access tim e: 500 ns (MAX.) • Current consum ption:
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LH5168ST
LH5168ST
28-pin,
TSOP28-P-0813)
SHARP 357
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BNK-17
Abstract: No abstract text available
Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85
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LH5116/NA/D-10
LH5116H/HN/HD-10
LH5116SN
24SOP
28SOJ
400mil)
LH521002BK/BNK-17/L
LH521002BK/BNK-20/L
LH521002BK/BNK-2S/L
LH521007AK-20
BNK-17
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100 10L AD
Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10
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LH5116/NA/D-10
100LQFP
H/AHN/AHD/AHT-10L
LH5164AVN/AVT
LH5164AVHN/AVHT
LH5164ASHN/ASHT
LH51256/N-10L
LH51V1032C4M-15
LH51V1032C4M-17
LH5268A/AN/AD-1
100 10L AD
LH521007AK-25
LH5168ST
LH5168SHN
lh5168
LH521002AK20
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