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    Sharp Microelectronics of the Americas LH5116-10

    IC SRAM 16KBIT PARALLEL 24DIP
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    DigiKey LH5116-10 Tube
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    Quest Components LH5116-10 12
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    Component Electronics, Inc LH5116-10 1
    • 1 $3.85
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    Sharp Microelectronics of the Americas LH5116-10F

    IC SRAM 16KBIT PARALLEL 24DIP
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    Bristol Electronics LH5116-10F 2 1
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    Quest Components LH5116-10F 1
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    Sharp Microelectronics of the Americas LH5116NA-10

    IC SRAM 16KBIT PARALLEL 24SOP
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    DigiKey LH5116NA-10 Tube 510
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    Bristol Electronics LH5116NA-10 37
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    Quest Components LH5116NA-10 1,669
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    LH5116NA-10 237
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    Chip 1 Exchange LH5116NA-10 3
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    Sharp Microelectronics of the Americas LH5116NA-10F

    IC SRAM 16KBIT PARALLEL 24SOP
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    Amphenol Corporation PT15LH05-101A2020-S

    Trimmer Resistors - Through Hole Rotary potentiometer Carbon 100 Ohm Resistance 20% Tolerance 0,25W 15mm Linear Analog Horizontal adjust Through hole Bulk
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    Mouser Electronics PT15LH05-101A2020-S
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    LH511 Datasheets (74)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH511000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000N-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000N-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000N-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000N-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000T-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000T-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000T-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000T-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000TR-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000TR-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000TR-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH511000TR-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    L-H511005B Para Light 5.0 mm dia LED lamp, with H5051 holder Original PDF
    L-H511006B Para Light 5.0 mm dia LED lamp, with H5051 holder Original PDF
    L-H511007B Para Light 5.0 mm dia LED lamp, with H5051 holder Original PDF
    LH5114-4 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    LH511 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LH5116-10F

    Abstract: 13B1
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH5116-10F 16K SRAM Model Number: LH511613 Spec. Issue Date: Oct. 26, 2004 Spec No: EL16X147 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


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    LH5116-10F LH511613) EL16X147 LH5116-10F 13B1 PDF

    5116 ram

    Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


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    LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H DIP024-P-0600 SOP024-P-0450B 0450b PDF

    LH5116S

    Abstract: LH5116SN
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


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    LH5116S 24-pin, 450-mil LH5116S 24-PIN 5116S-5 24SOP OP024-P-0450B) LH5116SN PDF

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


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    LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116H PDF

    LH5116NA-10F

    Abstract: 13B1 LH5116NA
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10F 16K SRAM Model Number: LH5116NC Spec. Issue Date: Oct. 22, 2004 Spec No: EL16X148 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


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    LH5116NA-10F LH5116NC) EL16X148 LH5116NA-10F 13B1 LH5116NA PDF

    lh5116na

    Abstract: 13B1
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


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    LH5116NA-10FE LH5116N9) EL16X048 lh5116na 13B1 PDF

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


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    LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


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    LH5116/H LH5116/H 24-PIN Three-sP-0600) 24-pin, 300-mil DIP024-P-0300) PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


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    LH5116S 24-pin, 450-mil LH5116S 24-PIN \I02\Z 450-mii PDF

    lh51100

    Abstract: lh511000
    Text: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:


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    LH511000UL 32-pin, 600-mil 525-mil LH511000UL LH5110Q0UL 600-mii lh51100 lh511000 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


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    LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


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    LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN PDF

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


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    LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 PDF

    1K x 4 static ram ttl

    Abstract: lh5114
    Text: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)


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    LH5114 LH5114H 18-pin, 300-mil 14H-3 LH5114H-15 1K x 4 static ram ttl lh5114 PDF

    LH5114H15

    Abstract: lh5114 1K x 8 static ram LH5114H 1K x 4 static ram ttl 1k x 4
    Text: LH5114 CMOS 4K 1K x 4 S ta tic RAM FEATURES DESCRIPTION • 1,024 x 4 bit organization The LH5114H is a static RAM organized as 1,024 x 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. • Access time: 150 ns (MAX.) • Power consumption:


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    LH5114 18-pin, 300-mil LH5114H 20-PIN 5114H-3 LH5114H-15 LH5114H15 lh5114 1K x 8 static ram 1K x 4 static ram ttl 1k x 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 2,048 • Access time: 1000 ns MAX. • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) x 8 bit organization CM O S 16K (2K x 8) Static RAM DESCRIPTION The LH5116S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


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    LH5116S LH5116S 24-pin, 450-mil 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


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    LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN PDF

    LH5118D

    Abstract: LH5118N-10 lh5118
    Text: LH5118/ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


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    LH5118/ LH5118H: 24-pin, 600-mil 300-mil 450-mil LH5118 LH5118D LH5118N-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


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    24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL PDF

    lh5117

    Abstract: DIP24-P-600
    Text: LH5117 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) The chip select input provides high speed access in


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    LH5117 LH5117H: 24-pin, 600-mil 300-mil 450-mil 24-PIN DIP24-P-600 PDF

    lh5116na-10

    Abstract: LH5116N
    Text: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


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    LH5116 LH5116H: 24-pin, 600-mil 300-mi 450-mi 24-PIN lh5116na-10 LH5116N PDF

    LH5115

    Abstract: No abstract text available
    Text: SHARP ELEK/ MELEC EbE D IV Ö1ÖD7TÖ D 0G03Ö74 0 *SRPJ C M O S 16K 2KX8 Static RAM LH5115 7 = 4 i- 2 .Z - /2 LH5115 • CMOS 16K (2 K X 8 ) Static RAM D e s c rip tio n Pin C o n n e c tio n s The L H 5 1 1 5 is a fully static RAM organized as 2 , 0 4 8 X 8 bits. It is fabricated using silicon-gate


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    LH5115 LH5115 PDF

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


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    LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV PDF

    0450B

    Abstract: 5116d
    Text: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).


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    LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-PIN 0450B 5116d PDF