Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH28F016LLT Search Results

    LH28F016LLT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH28F016LLT-10 Sharp EEPROM Parallel Async Scan PDF
    LH28F016LLT-12 Sharp LH28F016LLT-12 16M (1M x 16,2M x 8) Flash Memory 56pin TSOP Original PDF
    LH28F016LLT-15 Sharp LH28F016LLT-15 16M (1M x 16,2M x 8) Flash Memory 56pin TSOP Original PDF

    LH28F016LLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    56-PIN

    Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
    Text: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory


    Original     		PDF LH28F016LL 56-PIN J63428 SMT96120 LH28F016LL LH28F016SU camera with iCCD matrix BSR10

    etox

    Abstract: 5ses LH28F008SA LH28F016SU 150NSEC BSR10
    Text: SHARP F e b ru a ry 1 9 9 6 FLASH MEMORY LH28F016LLT-xx SHARP CORPORATION N O TIC E • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy­ right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or


    OCR Scan     		PDF LH28F016LLT-xx LH28F016LLT etox 5ses LH28F008SA LH28F016SU 150NSEC BSR10

    D1553

    Abstract: 3100-CC
    Text: SHARP LH28F016LLT 16 MBIT 1 MBIT x 16, 2 MBIT x 8 3V SINGLE VOLTAGE FLASH MEMORY FEATURES • 3V Write/Erase Operation (3V Vpp) - 2.7V-3.6V Write»Erase»Read Operation • User-Configurable x8 or x16 Operation • 120 ns Maximum Access Time (Vcc=3.0V) • 150ns Maxumam Access Time (Vcc=2.7V)


    OCR Scan     		PDF LH28F016LLT 150ns 56-Lead, LH28F016SU 16-Mbit LH28F016LLT 001555b D1553 3100-CC

    Untitled

    Abstract: No abstract text available
    Text: MEMORES ★ U n d e r d e v e lo p m e n t 5 V Single-Pow er-Supply Flash Mem ories Capacity 2M Configuration Erase block *. 1- • size HOfdSXDItS {bytes} 256k x 8 16k 5 12 k x 8 Model No. Access time (nsi MAX. ★LH28F020SUT/N-N60 60 V cc = 5 V * LH28F020SUT/N-N80


    OCR Scan     		PDF LH28F020SUT/N-N60 LH28F020SUT/N-N80 LH28F020SUHT/N-N80 LH28F004SU T-NF60 LH28F004SUT-NF80 LH28F008SCT/R/N/B-LF12 LH28F008SCHT/R/N/B-F85 LH28F008SCHT/R/N/B-F12 LH28F008SCHT/R/N/B-LF85

    bsh7

    Abstract: f b t bsh7
    Text: SHARP SHARP LHF16L01 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company, # W h e n using the products covered herein, please observe the conditions written herein


    OCR Scan     		PDF LHF16L01 AAU15 LHF16L0 CV734 LH28F016LL LH28F016LL CD43-1 CH182C223KK F/25V bsh7 f b t bsh7

    BA 6688 L

    Abstract: No abstract text available
    Text: 16M 1M FEATURES • 120 ns Maximum Access Time (VCC= 3 .0 V • 150 ns Maximum Access Time (VCC= 2 .7 V ) • 0.48 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block T O P V IE W -s 56 □ W P C E ,Z 2 55 □ W E LXZ 3 54 □ ÔË A 20 z


    OCR Scan     		PDF LH28F016SU 56-Pin, J63428 T96120 BA 6688 L