IPM module lg
Abstract: No abstract text available
Text: SKiiP 04ACB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter , $7 A , $7 7 0 ' 2 *
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04ACB066V1
IPM module lg
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B4 diode
Abstract: No abstract text available
Text: SKiiP 12NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *#5 @ 5. '&0,
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12NAB066V1
B4 diode
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Untitled
Abstract: No abstract text available
Text: SKiiP 02NEB066V3 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *#6 @ 6/ '&1,
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02NEB066V3
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scr gate driver ic
Abstract: No abstract text available
Text: SKiiP 25NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,#6 A 61 '&2/
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25NAB066V1
scr gate driver ic
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Untitled
Abstract: No abstract text available
Text: SKiiP 11NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper +#5 ? / '& 0
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11NAB066V1
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temptronic TP03000A
Abstract: NXR-1400 INCOMING RAW MATERIAL INSPECTION procedure Sample form for INCOMING Inspection of RAW MATERIAL INCOMING MATERIAL INSPECTION procedure INCOMING MATERIAL FLOW PROCESS FOR GENERAL FABRICATION UNIT TP04000 nicolet nxr1400 TRIO TECH
Text: QUALITY CONTROL FLOW LG Semicon CONTENTS PAGE 1. Introduction . 2. Q uality A ssurance System 3. R eliability Test . 13 . 30 4. Failure M ode A n alysis .
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KS621K20
Abstract: ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417
Text: m w m oc KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S M g lG D â tH n g tO fl Transistor Module 200 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K20
Amperes/1000
KS621K20
ipm darlington
transistor s43
DIODE S44
powerex ks62
transistor b 1417
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IPM module lg
Abstract: st ef 725
Text: m 7 E t,4 b 2 1 o o ° ^ 371 410 • Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 P M 150C V A 120 In t e lH lT IO C l M O C iU lG Three Phase
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Amperes/1200
14b21
IPM module lg
st ef 725
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IPM module lg
Abstract: No abstract text available
Text: KS8245A1 Po we rex, inc., 200 Hiltis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S illQ lG D Q r liflQ tO fl Transistor Module 15 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS8245A1
Amperes/600
IPM module lg
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Untitled
Abstract: No abstract text available
Text: • 72=^21 000*1333 4fiT ■ PM300CVA060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tB lH tT tO d M O d U lG Three Phase IGBT Inverter Output 300 Amperes/600 Volts TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10.
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PM300CVA060
Amperes/600
7214b21
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Untitled
Abstract: No abstract text available
Text: SIEMENS LS P380 ORANGE LOP38Û YELLOW LY P380 GREEN LG P380 PURE GREEN LP P380 s u p e r -r e d Plane Flat Top T1 3 mm LED Lamp Dim ensions in inches (mm) Surface not flat— , .100 016 ioS 028*071 (2.54) | J. ’ .016(0.4) X ^33 (3.5) “ KOSA Tl4(2i) .016(0.4)
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LOP38Û
QEX6818
P380-MP
P380-N
P380-P
P380-NQ
P380-LN
P380-M
OHL01697,
OHL02080,
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Untitled
Abstract: No abstract text available
Text: GM71C S 4800C GM71CS4800CL LG Semicon Co.,Ltd. 524.288W O R D S x 8 B IT C M O S D Y N A M IC R A M Description Features T he G M 71C (S )4800C /C L is the new generation dynam ic RAM o rganized 524,288 x 8 bit. G M 71C (S )4800C /C L has realized h igher density,
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4800C
28pin
GM71C
GM71CS4800CL
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RS-12V
Abstract: No abstract text available
Text: SIEM ENS LS T672-MO ORANGE LO T672-MO YELLOW LY T672-MO GREEN LG T672-MO PURE GREEN LP T672-LO SUPER-RED Super-TOP-LED , Surface Mount LED Lamp P a cka g e D im e n s io n s in In c h e s m m .11813.01 102(2 6) .083 (2 t) ” 067 (1 0 -0 0 4 _ J .035(0.9)
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T672-MO
T672-LO
672-M
672-LO
RS-12V
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Untitled
Abstract: No abstract text available
Text: SIEMENS LS T670 ORANGE LO T670 YELLOW LY T670 GREEN LG T670 PURE GREEN LP T670 SUPER-RED SMT-TOP-LED , Surface Mount LED Lamp P a cka g e D im e n s io n s in In c h e s m m Ï* 0 -0 0 4 ( 0 .0 .1 ) .0 8 3 (2 . 1) 0 6 7 ( 1-7 ) 4 03 5 ( 0 9 ) 02 8 ( 0 7 )
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670-H
T670-J
670-JL
T670-G
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Mitsubishi IPM module
Abstract: MITSUBISHI IPM PM50RHA060 PM150RLA060 igbt dc to dc chopper control circuit of single phase photovoltaic inverter PM150CLA120 PM50B4LB060 PM50rh PM75B4LA060
Text: Changes for the B etter A MITSUBISHI ELECTRIC Power Devices 5th Generation IPM L-Series/IPM for Photovoltaic generation Realization of Low loss through use of a 5th generation trench chip CSTBT and low noise through a newly developed control IC 5th Generation IPM
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PM50CLA060
PM75CLA060
PM100CLA060
PM150CLA060
PM200CLA060
PM300CLA060
PM450CLA060
PM600CLA060
PM50CLB060
PM75CLB060
Mitsubishi IPM module
MITSUBISHI IPM
PM50RHA060
PM150RLA060
igbt dc to dc chopper control
circuit of single phase photovoltaic inverter
PM150CLA120
PM50B4LB060
PM50rh
PM75B4LA060
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a7w transistor
Abstract: tekelec TPM425 a7w 57 transistor a7w 12 a7w 75 A7W 24 A7W 11 a7w+18 a7w+68
Text: MOTOROLA SC XSTRS/R F 4bE D WË b3b?2S4 00^55^2 4 «nOTb M O TO R O LA • SEM ICO NDUCTOR m h h h h m h u m m m h h h h b h i TECHNICAL DATA TPM 425 The RF Line UHF Power Transistor . . . designed for use in 100 -4 0 0 MHz broadband amplifiers. Construction utilizes the new standard, gold m etallization and diffused em itter ballast
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TPM425
244C-01,
a7w transistor
tekelec
TPM425
a7w 57
transistor a7w 12
a7w 75
A7W 24
A7W 11
a7w+18
a7w+68
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Untitled
Abstract: No abstract text available
Text: INFRARED LED + PHOTO TRANSISTOR TLP833 TLP833 COPIER, PAGE PRINTER, FACSIMILE VCR, M IC R O W A V E OVEN, AIR CONDITIONER AUTOM ATIC VENDING M ACHINE, TERM IN A L EQ U IPM EN T IN BANKING FACILITIES VA RIO US POSITION DETECTION SENSOR TLP833 is a photo interrupter which uses a high
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TLP833
TLP833)
TLP833
UL94-V0)
Ta-25Â
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MUX2-b
Abstract: UX16
Text: .IPMÎ MUX-16/MUX-28 16-CHANNEL/DUAL 8-CHANNEL JFETANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED) FEATURES G E N E R A L D ES C R IP TIO N • • • • • • • • • • • • • The MUX-16 Is a m onolithic 16-channel analog m ultiplexer w hich connects a sin gle output to 1 of the 16 analog inputs
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16-CHANNEL/DUAL
MUX-16
16-channel
MUX-28
MUX-16/MUX-28
MUX-16)
MUX2-b
UX16
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Halbleiterbauelemente DDR
Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
Text: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES/ PHI DIV OS D • D flitflo s □ □ □ 7 omm m ■ ~ P M p OP-22/883 PROGRAMMABLE MICROPOWER OPERATIONAL AMPLIFIER [SINGLE OR DUAL SUPPLY P r e c i s io n M o n o l it h i c s In c . 1.0 SCOPE This specification covers the detail requirements for a monolithic micropower operational
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OP-22/883
OP-22AJ/883
OP-22AZ/883
MIL-M-385101
0filb005
0156-01E
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MPS4050
Abstract: MPS2100-8 MPD4050-8 MPS4050-8 mps3060-9 MFD4050-8 mps3060 MPS3060-8 hall s41 MFS3060-2
Text: A ST EC STANDARD POWER 4b E J> WM 1D 13IE2 D0D0b2fl 7b7 MF/MP Series 5 to 7.5 Watts Single/Dual Outputs DC/DC Converters IPMR <xxz/> ASTEC " T 5 7 -1 1 The MF/MP Series is ideally suited for sensitive analog and digital applications requiring low noise, i.e. telecommunications,
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1D13IE2
MFD4050-8
HP23-050-18
MPD4050-9
HA23-050-48
MFD4050-9
HP23-050-48
MPS4050
MPS2100-8
MPD4050-8
MPS4050-8
mps3060-9
mps3060
MPS3060-8
hall s41
MFS3060-2
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Signetics 27c64
Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Text: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read
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27C64A
64K-bit
536-bit
Signetics 27c64
27C64A-12
27C64A-15
27C64A-20
27C64AI15
27C64AI20
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PMI op32
Abstract: OP32
Text: OP-32 PMI HIGH-SPEED Avcl a 10) PROGRAMMABLE MICROPOWER OPERATIONAL AMPLIFIER (SINGLE OR DUAL SUPPLY) M o n o iif h it s 1/ii Programmable Supply Current. 500nA to 2mA Single Supply to +30V
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OP-32
500nA
115dB
200fset
OP-32,
15/iA
500kfi
PMI op32
OP32
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BCB60
Abstract: BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C BCB59
Text: • bhS3n31 □ÜS447CI 755 BIAPX BC859 BC860 b?E J> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package p rim a rily intended f o r low-noise in p u t stages in tape recorders, h i-fi a m p lifiers and o th e r audio freq u e n cy e q u ipm ent in th ic k and th in -film h y b rid circu its.
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bhS3n31
GE447lÃ
BC859
BC860
OT-23
BC859
bbS3T31
G024M63
BCB60
BC860
BC859A
BC859B
BC859C
BC860A
BC860B
BC860C
BCB59
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