DIN 933
Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
Text: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information
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3650-A/ISO
0722/DIN
com62
DIN 933
GDML 3011 LED 24 RG
LG diode 831
GDME 311
228-G1
GDML
GDML 211
GDML 2011 GE1 G
gdml 2011
DIN 43650-A
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LB 123T
Abstract: ccd sensor pin diagram 9325
Text: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview The hyper-D CCD is a CCD area image sensor featuring an ultra-wide dynamic range that far surpasses anything achieved by the competition. It has 1/3-type 410k pixels. The CCD can read the following two types of signals at
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MN37181FT
1005T
1014T
WDIP016-P-0500C
LB 123T
ccd sensor pin diagram
9325
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910T
Abstract: 1030T 141T 159T L486
Text: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview Part Number Size ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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MN37181FT
910T
1030T
141T
159T
L486
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview Part Number Size MN37181FT 6mm(type-1/3) ■ Features ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma
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MN37181FT
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IN4744
Abstract: Ferroxcube 846XT250-3C8 EC52-3C8 768XT188-3E2A 846XT250-3C8 Ferroxcube 3C8 EC-52-3C8 magnetic core ferroxcube 3E2A 2616PA250-3B7 P4404
Text: CS3842AAN/D Single CS3842A Provides Control for 500 W/200 kHz Current-Mode Power Supply http://onsemi.com APPLICATION NOTE INTRODUCTION In current mode control, CMC the control signal represents the peak inductor current and forms a second loop in the circuit (Figure 1). The advantages of current mode
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CS3842AAN/D
CS3842A
r14525
IN4744
Ferroxcube 846XT250-3C8
EC52-3C8
768XT188-3E2A
846XT250-3C8
Ferroxcube 3C8
EC-52-3C8
magnetic core ferroxcube 3E2A
2616PA250-3B7
P4404
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Untitled
Abstract: No abstract text available
Text: CSD86330Q3D SLPS264C – OCTOBER 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
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CSD86330Q3D
SLPS264C
CSD86330Q3D
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Untitled
Abstract: No abstract text available
Text: CSD86350Q5D SLPS223E – MAY 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86350Q5D NexFET™ power block is an optimized design for synchronous buck applications
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CSD86350Q5D
SLPS223E
CSD86350Q5D
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE
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BTV160DV
1200R
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TA49018
Abstract: RFP50N06 50A60V f1s50n06
Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
RF1S50N06SM
AN7254
AN7260.
TA49018
RFP50N06
50A60V
f1s50n06
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Untitled
Abstract: No abstract text available
Text: HAT3008R Silicon N-Channel / P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-536B 3rd. Edition Features • Low on-resistance • Capable o f 4 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 D D
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HAT3008R
ADE-208-536B
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927801765
Abstract: HIRSCHMANN DIN 43650 4 pin 927801144 gdm hirschmann 14 A Hirschmann 4 pin connector hirschmann GDME gssna Hirschmann connector 4 pin HIRSCHMANN DIN 43650 4-pin GSSR 300
Text: Hirschmann INDUSTRIAL CONNECTORS GDM Connectors to DIN 43650 Form A Three and four pole industrial power connectors, made to DIN 43650 specifications. Screw or crimp style wire attachment with rubber compression gland offers protection against dust and
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VAC/300
VAC/400
VAC/250
1N4007
1N4007
MOVV180
927801765
HIRSCHMANN DIN 43650 4 pin
927801144
gdm hirschmann 14 A
Hirschmann 4 pin connector
hirschmann GDME
gssna
Hirschmann connector 4 pin
HIRSCHMANN DIN 43650 4-pin
GSSR 300
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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Untitled
Abstract: No abstract text available
Text: DG300A, DG301A DG302A, DG303A ff! HARRIS S E M I C O N D U C T O R TTL Compatible CMOS Analog Switches D ecem ber 1993 Features Description • L o w P o w e r C o n s u m p tio n The DG300A through DG303A family of monolithic C M OS switches are truly compatible second source of the original man
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DG300A,
DG301A
DG302A,
DG303A
DG300A
DG303A
DG301A,
DG303A)
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transistor WLM
Abstract: transistor st 932
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhan ce m e n t m ode standard level fie ld -e ffe ct pow er tran sisto r in a plastic envelope using ’tre n c h ’ technology. T h e device
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BUK7514-55
transistor WLM
transistor st 932
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MTA4N60E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM
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MTA4N60E
b3b7254
01G3Q01
01G3GG2
MTA4N60E
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3n120e
Abstract: mtp3n
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E T M O S E -FE T P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h - v o lt a g e T M O S E - F E T is d e s ig n e d to
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MTP3N120E
3n120e
mtp3n
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is
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RF1K49224
RF1K49224
1-800-4-HARRIS
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TLP721
Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
Text: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic
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TLP721
TLP721
UL1577
EN60065
EN60950
EN4330784
E67349
E152349
TLP721F
11-5B2
E67349
VDE0884
74285
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PDF
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E67349
Abstract: TLP733 TLP734 VDE0884
Text: T O S H IB A TLP733JLP734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733, TLP734 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING PO W ER SUPPLY The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
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TLP733
TLP734
TLP733,
TLP734
UL1577,
E67349
EN60065
E67349
VDE0884
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3 N 120E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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MTP3N120E/D
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PDF
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E67349
Abstract: TLP733 TLP734 VDE0884
Text: TLP733JLP734 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP733, TLP734 The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :
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TLP733
TLP734
TLP733,
TLP734
UL1577,
E67349
EN60065
E67349
VDE0884
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PDF
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TLP721
Abstract: TLP721F tlp721 photocoupler 11-5B2 E67349 VDE0884
Text: TO SH IBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY Unit in mm The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic
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OCR Scan
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TLP721
TLP721
E67349
E152349
UL1577
EN60065
EN60950
EN4330784
TLP721F
tlp721 photocoupler
11-5B2
E67349
VDE0884
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PDF
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