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    LG 48A Search Results

    LG 48A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3434(0)-Z-E2-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3434(0)-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3434-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3424-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 48A 11.5Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
    2SK3434-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
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    LG 48A Price and Stock

    E-T-A 3120-N323-P7T1-W19LG4-8A

    CIR BRKR THERM SWITCH 2P
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    DigiKey 3120-N323-P7T1-W19LG4-8A Bulk 10
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    RS 3120-N323-P7T1-W19LG4-8A Bulk 6 Weeks 10
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    Sager 3120-N323-P7T1-W19LG4-8A 10
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    • 100 $33.52
    • 1000 $22.59
    • 10000 $22.59
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    E-T-A 3120-N321-P7T1-W19LG4-8A

    CIR BRKR THERM SWITCH 2P
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    RS 3120-N321-P7T1-W19LG4-8A Bulk 6 Weeks 10
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    Sager 3120-N321-P7T1-W19LG4-8A 10
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    • 100 $33.52
    • 1000 $22.59
    • 10000 $22.59
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    E-T-A 3120-F323-P7T1-W12LG4-8A

    CIR BRKR THRM 8A
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    E-T-A 3120-F321-P7T1-W19LG4-8A

    CIR BRKR THRM 8A 250VAC 50VDC
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    E-T-A 3120-F323-P7T1-W19LG4-8A

    CIRC BRKR THRM
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    LG 48A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIODE marking EG 83A

    Abstract: No abstract text available
    Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient


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    VSB06P05LCI VSB06P05LCI 5/50ns DIODE marking EG 83A PDF

    Untitled

    Abstract: No abstract text available
    Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient


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    VSB06P05LCI VSB06P05LCI 5/50ns PDF

    vsb06p

    Abstract: VSB06P05LCI lg 83a
    Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient


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    VSB06P05LCI VSB06P05LCI 5/50ns vsb06p lg 83a PDF

    GR-1089

    Abstract: RS-423 VSB06P05LCI abd marking code
    Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient


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    VSB06P05LCI VSB06P05LCI 5/50ns GR-1089 RS-423 abd marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient


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    PLC03-6 PLC03-6 5/50ns PDF

    PLC03-6

    Abstract: abd marking code
    Text: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient


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    PLC03-6 PLC03-6 5/50ns abd marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient


    Original
    PLC03-6 PLC03-6 5/50ns PDF

    PLC03-6

    Abstract: Ethernet
    Text: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient


    Original
    PLC03-6 PLC03-6 5/50ns Ethernet PDF

    Untitled

    Abstract: No abstract text available
    Text: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient


    Original
    PLC03-6 PLC03-6 5/50ns PDF

    Ethernet

    Abstract: PLC01-6
    Text: 05071 PLC01-6 Only One Name Means ProTek’Tion high powered MULTI-LINE low capacitance TVS ARRAY Description The PLC01-6 is a high powered multi-line low capacitance transient voltage suppressor array that provides board level protection for Bellcore 1089, standard TTL and CMOS bus line applications against the damaging effects of ESD,


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    PLC01-6 PLC01-6 SO-16WB 5/50ns Ethernet PDF

    PLC01-6

    Abstract: No abstract text available
    Text: 05071 PLC01-6 Only One Name Means ProTek’Tion high powered MULTI-LINE low capacitance TVS ARRAY Description The PLC01-6 is a high powered multi-line low capacitance transient voltage suppressor array that provides board level protection for Bellcore 1089, standard TTL and CMOS bus line applications against the damaging effects of ESD,


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    PLC01-6 PLC01-6 SO-16WB 5/50ns PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M70BVR A dvanced P o w er Te c h n o l o g y 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    APT30M70BVR O-247 MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT30M70BVR pow er Te c h n o lo g y 300V 48A 0.070Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT30M70BVR O-247 APT30M70BVR PDF

    SMLG170CA

    Abstract: SMLJ11A SMLJ100A SMLJ90A SMLJ17A SMLJ26A SMLJ170A SMLJ6.0A SMLJ12A SMLJ14A
    Text: Microsemi Corp. The diode experts SANTA A N A , CA SC O T T SD A L E , A Z For more information call: 602 941-6300 SM L SERIES 5 .0 thru 1 7 0 .0 Volts 3 0 0 0 WATTS FEA TU RES UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT • UN ID IRECTIONAL AND BIDIRECTIONAL


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    DO-214AB DO-215AB SMLG170CA SMLJ11A SMLJ100A SMLJ90A SMLJ17A SMLJ26A SMLJ170A SMLJ6.0A SMLJ12A SMLJ14A PDF

    1653A

    Abstract: N029RH12 tn029r N029RH
    Text: Technical Publication WESTCODE $ SEMICONDUCTORS TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 am peres average: up to 1 500 volts V rrm Ratings Maximum values at 125°C Tj unless stated otherwise SYMBOL RATING CONDITIONS Average on-state current


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    N029R TN029R 1653A N029RH12 tn029r N029RH PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    N023RH12

    Abstract: tN023 595a2 OOQ214Q N023RH hawk TN023R
    Text: WESTCODE S EMI C O N D U CT O R S B'ìE » • TT DR RSS QOOSIB? 3 MlilESB Technical Publication WESTCODE 0 SEMICONDUCTORS TN023R Issue 2 July 1985 X — z Convertor Grade Stud-Base Thyristor Type N023R 2 3 a m p e r e s a v e r a g e : u p t o 1 5 0 0 v o l t s V rrm


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    000S137 TN023R N023R 595A2s 440A2s 2M785 N023RH12 tN023 595a2 OOQ214Q N023RH hawk TN023R PDF

    SM16J

    Abstract: No abstract text available
    Text: T O SH IB A SM16 G,J 48,USM16(G,J)48,SM16(G,J)48A,USM 16(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G48, USM16G48, SM16J48, USM16J48 SM16G48A, USM16G48A, SM16J48A, USM16J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V


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    USM16 SM16G48, USM16G48, SM16J48, USM16J48 SM16G48A, USM16G48A, SM16J48A, USM16J48A SM16J PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IBA S M 16 G,J 48,USM 16(G,J)48,SM 16(G,J)48A,USM 16(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G48, USM16G48, SM16J48, USM16J48 SM 16G48A, USM 16G48A, SM16J48A, USM16J48A AC PO W ER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vj)R]y[ = 400, 600V


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    SM16G48, USM16G48, SM16J48, USM16J48 16G48A, SM16J48A, USM16J48A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A SM8 G,J 48,USM8(G,J)48,SM8(G/J)48A,USM8(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48, USM8G48, SM8J48, USM8J48 SM8G48A, USM8G48A, SM8J48A, USM8J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vqrm ;= 400, 600V


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    SM8G48, USM8G48, SM8J48, USM8J48 SM8G48A, USM8G48A, SM8J48A, USM8J48A PDF

    bus48

    Abstract: t335 motorola bus48
    Text: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE |b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)


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    PDF

    transistor 3405 motorola

    Abstract: bux48a equivalent bux48 equivalent transistor 3405 npn
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed (or high-voltage, high-speed,


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    BUX48/BUX48A BUX48 BUX48A wit16 transistor 3405 motorola bux48a equivalent bux48 equivalent transistor 3405 npn PDF

    t056

    Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
    Text: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,


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    0D01B40 MIL-S-19500/248A 2N2015, 2N2016 0D001S5 2N20t 0D13S2 t056 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR PDF

    N029RH12

    Abstract: 1653A jetion tn029r 1174A2 Westcode thyristor
    Text: lilESTCODE SEMICONDUCTORS 3 TE D TTO ^S 0002141 5 I ÜJESB T -2. r - f 7 Technical WESTCODE SEMICONDUCTORS Publication TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 amperes average: up to 1500 volts V r r m Ratings Maximum values at 125°C Tj unless stated otherwise


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    TN029R N029R 1174A2S DGOS144 TN029R N029RH12 1653A jetion 1174A2 Westcode thyristor PDF