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    LF SMD TRANSISTOR Search Results

    LF SMD TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    LF SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PDF PHPT61002NYC OT669 LFPAK56) PHPT61002PYC

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.


    Original     		PDF PHPT61002PYC OT669 LFPAK56) PHPT61002NYC.

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PDF PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: A Heatsinks for D PAK and others B C D – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,


    Original     		PDF SO-10, SO-20, SO-36, SO-14, SO-16,

    FK 244 13 D2 PAK

    Abstract: Heatsinks D-PAK TO-268 IC A 244 FK 330 lf 244 so-10 sot 669 aluminium profile
    Text: Hola1 H A H Heatsinks for D PAK and others B C – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,


    Original     		PDF SO-10, SO-20, SO-36, SO-14, SO-16, FK 244 13 D2 PAK Heatsinks D-PAK TO-268 IC A 244 FK 330 lf 244 so-10 sot 669 aluminium profile

    smd code A4p

    Abstract: RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X ATA5279 smd diode code A4N
    Text: LF Wake-up Demonstrator ATAK5279-82 Using Six-fold Antenna Driver ATA5279 1. General Description The demonstrator is intended to show LF wake-up functionality using the new six-fold LF antenna driver ATA5279 and the 3D receiver ATA5282. The demonstrator may


    Original     		PDF ATAK5279-82 ATA5279 ATA5279 ATA5282. 07/08notice. smd code A4p RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X smd diode code A4N

    IP4223CZ6

    Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
    Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our


    Original     		PDF OD882 OT883 PVR100AD-B12V PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF

    4894B

    Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
    Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring


    Original     		PDF ATAK5278-82 ATA5278 ATA5282. ATA5278 ATA5282, 4894B 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols

    Untitled

    Abstract: No abstract text available
    Text: TD13004D • TD13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor • Very short switching times Features Very low switching losses • Very low dynamic saturation • Very low operating temperature • High reverse voltage • •


    OCR Scan     		PDF TD13004D TD13005D TD13005D 20-Jan-99

    DSAIH0002562

    Abstract: No abstract text available
    Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 DSAIH0002562

    BKC Semiconductors

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 BKC Semiconductors

    BKC Semiconductors

    Abstract: LR1 transistor smd transistor LR
    Text: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 BKC Semiconductors LR1 transistor smd transistor LR

    11733

    Abstract: BKC Semiconductors DSAIH0002562 transistor 117-33
    Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 11733 BKC Semiconductors DSAIH0002562 transistor 117-33

    s7d smd

    Abstract: SMD s7d BKC Semiconductors DSAIH0002561
    Text: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 s7d smd SMD s7d BKC Semiconductors DSAIH0002561

    transistor SMD Lf

    Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
    Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 transistor SMD Lf LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors

    DSAIH00025320

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 DSAIH00025320

    DSAIH0002562

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 DSAIH0002562

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


    OCR Scan     		PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c