Untitled
Abstract: No abstract text available
Text: "BIG IDEAS IN 100 AMPERE POWER DARLINGTON MT-6002 FEATURES O Vceo.400V lem. 100A Vcb0.450V Pd.385W Veb0. 10V ejc . 0.45°C/W
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MT-6002
PPS-250
359i-3C
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V67D
Abstract: BDV67B
Text: BDV67A; B BDV67C; D 11 PHILIPS INTERNATIONAL SbE D • 711002b 0 QM33T2 Til M P H I N T - 13 DARLINGTON POWER TRANSISTORS N P N ep ita x ia l base D arling to n transistors fo r audio o u tp u t stages and general a m p lifie r and switching applications. PNP co m p lem ents are B D V 6 6 A , B, C and D. M atch ed c o m p lem en tary pairs can be supplied.
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BDV67A;
BDV67C;
711002b
QM33T2
DV67B-
T-33-a?
V67D
BDV67B
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2SB561
Abstract: 2SB831 2SD1101 2SB83
Text: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQ UEN CY AM PLIFIER Complementary pair with 2SD1101 „ o.i b : ; s !. Emil icr 2. Base Í , Collector <Dimcr«sii?ns in mm MPAK) • ABSO LUTE MAXIMUM RATINGS (Tii=25°C) I lem Symbol MAXIMUM COLLECTOR DISSIPATION
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2SB831
2SD1101
2SB831
2SB561.
2SB561
2SD1101
2SB83
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tl 0741
Abstract: fuji ipm 6MBP15RA120 6MBP15RA AC2500 P619 6MBP1 7z fuse AC20DV
Text: This material and the Information heroin is the properly of Fuji Electric Co .Lid They shall be neither reproduced, copied lem. or disclosed in any way whatsoever for the use of any third pany.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.
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H04-004-03
tl 0741
fuji ipm
6MBP15RA120
6MBP15RA
AC2500
P619
6MBP1
7z fuse
AC20DV
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IQ226075
Abstract: LF101 cte table
Text: POWEREX W 3=iE D I NC IM E ilE 7S=î4b21 GDOM'ill S H P R X IQ226075 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 LeM ans, France (43)41.14.14 Chopper IGBTMOD Power Module
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IQ226075
Amperes/600
BP107,
75Amperes/600Volts
LF101
cte table
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KSE350
Abstract: No abstract text available
Text: KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTO R-EM ITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORM ER • C o m p lem en t to K S E 3 4 0 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- B ase Vo ltage
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KSE350
KSE350
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CTC 880 transistor
Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
Text: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout
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AT-38086
AT-38086
CTC 880 transistor
CTC 313 transistor
3 pin CTC 880 transistor
GSM0102
CTC 313 transistor pin diagram
T1L112
ctc 313 npn transistor
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U01A
Abstract: No abstract text available
Text: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C o m p lem en t to KSB564 A • C o llecto r C u rren t lc » 1A • C o llecto r D issip atio n Pc = 800 *rtW TO-82 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating
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KSD471A
KSB564
U01A
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2
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TIP145/146/
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6MB 125 S-1 2 0 l
Abstract: 500C 6MBI10S-120
Text: X This m a terial and ihe Inlormeticn herein is he property of Fuji Etectnc C o Kd They sha« be neither «^produced, co p ie d lem . or disclosed in any way w h atso ever for the use of a n y third party.nor used for the manufacturing purposes w ith o u t
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0GG53DD
H04-004-07
Jan-29-
H04-004-03
DDG53D7
H04-004-03
6MB 125 S-1 2 0 l
500C
6MBI10S-120
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Untitled
Abstract: No abstract text available
Text: SOT89 PIMP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 2 - JUNE 199S_ O FEATU RES * High breakdown and low saturation voltage A P P LIC A T IO N S * Suitable for video output stages in TV sets * Sw itching pow er supplies C O M P LEM EN TA R Y T Y P E 8F621 - BF620
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8F621
BF620
BF623
BF622
BF621
-10nA.
-100uA,
-200V,
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2SB1078
Abstract: 2SD1377
Text: HITACHI 2S B 1078 -SILICON PNP EPITAXIAL LOW FR EQ UENC Y POWER AMPLIFIER C O M PLEM ENTARY PAIR WITH 2S D 1 3 7 7 ® I. Haw I . Collccmr Flange ?. Emitter (Diminuions in mm) (JEDEC TO -220AB) I AB S O LU TE M AXIM UM R ATING S (Ta=25°C) I lem Symbol
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2SB1078
2SD1377Â
O-220AB)
2SBI07RÂ
-25mA.
-50mA.
-l20V.
-100V,
-80mA*
2SD1377
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transistor marking code 7E SOT-23
Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.
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BSS63
BSS64.
OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
transistor marking code 7E SOT-23
transistor dg sot-23
marking 1p transistor sot23
D6 TRANSISTOR MARKING
m6 marking transistor sot-23
sot-23 MARKING CODE G1
TRANSISTOR 1P SOT23
transistor sot-23 Marking AR
transistor G1 SOT-23
transistor cg sot-23
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JUNE 1996 FEATU RES * Low equivalent on-resistance; RCEjMti 25 0 m ii at 1A PA R TM A R KIN G D E T A IL S C O M P LEM EN TA R Y T Y P E - 589 FMMT489 ABSOLUTE MAXIMUM RATINGS. PARA M ETER
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FMMT489
-10mA*
-100mA*
-200m
-500mA,
-100mA,
100MHz
FMMT54S
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2SC2489
Abstract: 2SA1065 2SA1064 2SC2488
Text: PANASONIC INDL/ELEK-CSEMI} 75C D | b“135654 DDimfl? & | 72C 0 9 1 8 7 D 2SC2488 2SC2488 '> ij zj > NPN i t I t M / S i NPN Epitaxial Mesa t \z j* Amplifier, High Pow er A m p lifier U /C om p lem en ta ry Pair w ith 2SA1064 2SA1064 1 Unit ^ mm <M o •H
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2SC2488
2SA106413
2SA1064
2SC2489
2SA1065
2SA1064
2SC2488
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bd330
Abstract: No abstract text available
Text: BD329 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N - I’ -N tr a n s is to r in a SO T-32 p la s tic package, intended fo r c a r -radio output stages. P-N -P co m p lem en t is BD330. M atch ed p a irs can be supplied. Q UICK REFERENCE D A T A
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BD329
BD330.
BD329/BD330
bd330
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transistor KIN
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -AUGUST 1995 Q FEATU RES * Suitable for AF drivers and output stages * High collector current and Low Vct sat( C O M P LEM EN TA R Y T YP E BCP53 PA R TM A R KIN G D E T A ILS BCP56 B C P 5 6 - 10 B C P 5 6 - 16
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OT223
BCP53
BCP56
100nA
VCB--30V
500mA,
150mA,
BCP56-10
transistor KIN
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR _ ISSU E 3 - NOVEM BER 1995 FEATU RES * L o w equivalent on-resistance; RCE sat 250mQ at 1A C O M P LEM EN T A R Y TYPE - FM M T549 P A R T M A R K IN G D ET A IL - 449 ABSOLUTE M A X IM U M RATINGS.
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250mQ
G0CH274
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Untitled
Abstract: No abstract text available
Text: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - OCTOBER 1995 O FEATURES * Low equivalent on-resistance; RCE S8t|250m ii at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TYPES - FM M T549 F M M T 44 9 F M M T 5 4 9 A - N/A
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FMMT549
FMMT549A
FMMT549A
-100mA,
100MHz
-500mA,
-50mA
300us.
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L1101-12
Abstract: RISC86 AK-02 MMDS CCS AMD 754 socket pinouts
Text: Preliminary Information 21049H/0—Septem ber 1998 AM D £1 Mobile AMD-K6 Processor Data Sheet About This Data Sheet The M ob ile AMD-K6® P rocessor D ata S h e e t is a su p p lem en t to th e AMD-K6® Processor Data Sheet, order# 20695. When combined, the two data sheets provide the
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21049H/0
2i049H/0-September
RISC86Â
x86-to-RISC86
L1101-12
RISC86
AK-02
MMDS CCS
AMD 754 socket pinouts
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Untitled
Abstract: No abstract text available
Text: CRO D E S C R IP T IO N CL313, CL314 are O U J I«J CL314 SILICON TRANSISTORS co m p lem en tary silicon p lan ar ep itax ial tr a n s is to r s 'fo r use A F sm all sig n al a m p lifie rs and drivers. Cl .313 60V 50V 6V ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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CL313,
CL314
CL314
300mW
GL314
CL313
Oct-96
200Hz
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J 3305
Abstract: 7MBR100SB060 100SB-060 CD11E
Text: This m aterial and iho Information herein is ih« proper ty of F up Elecwc Co,U d.They shillbe neither reproduced. c op ie d lem. or dfeclo&ed in any way w hatsoever lor the use of any third p a rtyn o r used for the manufacturing p urp o se s without the e ip re ss w ni ten consent of Fuji Electric Co_ Ltd.
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7MBR100SB060
H04-004-07
Jan-12-
MS6M0417
dgg57bb
J 3305
7MBR100SB060
100SB-060
CD11E
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING
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2SA1805
2SC4690
--50m
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 965 (Unit in mm APPLICATIONS ) P o w e r A m p lifie r A p p lic a tio n s. D r i v e r S t a g e A m p lifie r A p p lic atio n s. ( »FEATURES ) • C om p lem entary to K T C 2235 • MAXIMUM RATINGS
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75MAX.
80MAX.
60MAX.
92MOD
-10mA,
500mA,
-50mA
-500mA
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