LT308-S7
Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Text: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度
|
Original
|
PDF
|
308-S7
94-V0
LT308-S7
LT308-S7
LEM LT 308 S7
Lem LT 300 - t
Lem LT 300
308-S7
LEM LT 308
lem lt 2000
LT308-S
|
LEM LT 308
Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
Text: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环(补偿)电流传感
|
Original
|
PDF
|
308-T7
94-V0
LT308-T7
LEM LT 308
Lem LT 300
LT308-T7
Lem LT 500
t7 308
|
Lem LT 300
Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
Text: 电流传感器 LT 308-S6 原边和副边之间是绝缘的,用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度
|
Original
|
PDF
|
308-S6
94-V0
LT308-S6
Lem LT 300
LT308-S6
308-S6
LEM LT 308
LT308-S
|
ssi 202
Abstract: HER301 HER308 Z03E
Text: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability
|
OCR Scan
|
PDF
|
HER301
-HER308
157PF
MIL-STD-202.
ssi 202
HER308
Z03E
|
laf 0001
Abstract: SI 6822 intel 8049 intel 8059 S1 6822 jc-115 intel 8049 microcomputer MCS-48 intel AP-49 TLE 7233
Text: 1 AP-49 INTRODUCTION T h e Intel M C S -48 fa m ily o f m ic ro c o m p u te rs m arked th e firs t tim e an e ig h t bit c o m p u te r w ith program s torage, d a ta sto rag e, and I/O fa c ilitie s w as ava ila b le on a s in g le LSI chip. T h e p erfo rm an ce o f th e initial
|
OCR Scan
|
PDF
|
AP-49
MCS-48
laf 0001
SI 6822
intel 8049
intel 8059
S1 6822
jc-115
intel 8049 microcomputer
intel AP-49
TLE 7233
|
TGL 29331
Abstract: Kombinat VEB Elektronische Bauelemente TGL 31428 bauelemente Kombinat bauelemente DDR TGL-31428 21-1 TGL 24815 TGL 24687 TGL 24815 veb taschenbuch
Text: Kontakt bauelemente Kombinat VEB Elektronische Bauelemente K O N T A K T B A UELEM ENTE In h alt S te c k v e rb in d e r, fla che B a u fo rm Seite 6 H F -R u n d ste ckve rb in d e r 61 N F -R u n d ste ckve rb in d e r 101 L ic h tle ite rs te c k v e rb in d e r
|
OCR Scan
|
PDF
|
|
KD502
Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71
|
OCR Scan
|
PDF
|
101NU70
102NU70
103NU70
104NU70
105NU70
106NU70
107NU70
101NU71
102NU71
103NU71
KD502
KU607
KU605
KFY18
KD503
KF517
KC507
KU608
KD3055
KFY46
|
1rf820
Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A
Text: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign
|
OCR Scan
|
PDF
|
AN707
Si9120
J40401TC
1RF820
2N7000
LEM LT 308
N-Channel Depletion-Mode MOSFET high voltage
S2000A
|
44795
Abstract: sd 13005
Text: HTG2AXX HOLTEK r r uC Voice with 1024-Pixel LCD Features 8-bit microcontroller • • • • • • • O p e ra tin g voltage: 2.4V~5.2V 8 K x l6 p ro g ram ROM 208x8 d a ta RAM 16/24 b id ire ctio n a l I/O lines 16-bit p ro g ram m ab le tim e r counter
|
OCR Scan
|
PDF
|
1024-Pixel
208x8
16-bit
44795
sd 13005
|
MP21E
Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR
|
OCR Scan
|
PDF
|
|
VEB mikroelektronik
Abstract: 4565 D A2005V KP303 KP303D U806D analoge schaltkreise a4100d A209K sf126d
Text: DATEN BUCH 0 /x *«» Der vorliegende T ite l ist ein w eite re r Band d er D aten buch-R eihe Uber die M ikroelektronik. B auelem ente Die A pplikationszentrum R eihe wird Elektronik des im Berlin VEB Kom binat A uftrag des und des VEB M ilitär verlages herausgegeben.
|
OCR Scan
|
PDF
|
|
ipc-16a
Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
Text: user benefits PACE features • Simplified pro gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe
|
OCR Scan
|
PDF
|
IPC-16A/520D
16-bit
10-word
40-pin
latches440498,
737-5000/TWX
1371/Telex
77SS32
ipc-16a
DS3608
stk 808
c47s
ipc 16a
lifo stack 256 word 8 bit
ScansUX1009
stk power amplifiers
JC-14
stk amplifiers
|
JD 1803
Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Text: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL
|
OCR Scan
|
PDF
|
|
CR250J
Abstract: CR250J24 CR250J-8 CR150DM CR150DM-10 CR150DM-12 CR150DM-24 CR150DM-32 CR150DM-36 CR150DM-4
Text: - 50 - m ss « CR150 DM— 10 CR150 DM— 12 CR150 DM— 16 CR150DM-20 CR150 DM— 2 4 CRI 50DM—? CR ì 50 DM— 3 2 CRI 50 DM— 3 6 CR150 DM— 4 CR150DM-6 CR150DM-8 CR250DP-4 CR250DP-6 CR250DP-8 CR250J-10 CR2 50 J— 12 CR250J— 16 CR2 50 J— 20 CR250J-24
|
OCR Scan
|
PDF
|
2-10ms
CR150DM-10
CR150DM-12
CR150DMâ
CRI50DM-20
H-101
CR250J
CR250J24
CR250J-8
CR150DM
CR150DM-10
CR150DM-24
CR150DM-32
CR150DM-36
CR150DM-4
|
|
TSS2J2A44S
Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
Text: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate
|
OCR Scan
|
PDF
|
125x125x2m
TSS2J2A44S
TSS1J41
TSS16J41S
tnr471
TSS1G41
TSS25J41S
TSS25J47S
TSS16G41
TSS3G44S
TSS-2J44S
|
SN7401
Abstract: sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c
Text: INDEX PAGE TTL Integrated Circuits Mechanical Data 1 TTL Interchangeability Guide 6 Functional Selection Guide 19 Explanation of Function Tables 38 54/74 Families of Compatible TTL Circuits 40 TTL INTEGRATED CIRCUITS MECHANICAL DATA J ceramic dual-in-line package
|
OCR Scan
|
PDF
|
24-lead
SN74S474
SN54S475
SN74S475
SN54S482
SN74S482
LCC4270
SN54490
SN74490
SN54LS490
SN7401
sn29601
SN7449
SN74298
SN74265
MC3021
SN54367
sn74142
signetics 8223
9370c
|
IBM "embedded dram"
Abstract: oki cross MG65P 35x35 bga
Text: Oki Semiconductor MG63P/64P/65P_ 0.25|im Embedded DRAM/Customer Structured Arrays D ES C R IP TIO N O ki's 0.25 uni M G 6 3 P /6 4 P /6 5 P A pplication-Specific Integrated Circuit ASIC provides the ability to em bed large blocks of Synchronous DRAM (SDRAM ) into an em bedded array architecture called the
|
OCR Scan
|
PDF
|
MG63P/64P/65P_
MG63P/64P/65P
proPB14
MG6xPB16
MG6xPB18
MG6xPB20
MG6xPB22
MG6xPB24
MG6xPB26
IBM "embedded dram"
oki cross
MG65P
35x35 bga
|
Untitled
Abstract: No abstract text available
Text: IN TE G R A TE D CIRCUITS [nlEET TZA1000 QIC read-write amplifier 1998 M ar 17 P relim inary specification S upersedes data of 1998 Mar 11 File under Integrated C ircuits, IC01 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
|
OCR Scan
|
PDF
|
TZA1000
545102/00/02/pp24
|
3 pin preset resistor 10k
Abstract: LA2600 LC7500 50k preset diagram LC7600 mos 3021 preset resistor 568C LC750 preset resistor 10k
Text: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic
|
OCR Scan
|
PDF
|
f-74-05-01
LC7500
LA2600.
DIP30S
0DD77L3
T-90-20
DIP-24Slim
DIP28SN
QIP48B
3 pin preset resistor 10k
LA2600
50k preset diagram
LC7600
mos 3021
preset resistor
568C
LC750
preset resistor 10k
|
LEM LT 200-S
Abstract: 7174K LEM LT 308 S7 LC7600
Text: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic
|
OCR Scan
|
PDF
|
MFP24
QIP48A
00077b3
IP24S
MFP30
LEM LT 200-S
7174K
LEM LT 308 S7
LC7600
|
TA2036N
Abstract: ScansU9X26 Scans-031 rs tube in3020b TIL 815 S3 TRIO 3D cep 6060 r
Text: DU MONT INDUSTRIAL CATHODE-RAY TUBES S econ d E dition IN D U S T R IA L T U B E SA LES D E P A R T M E N T ALLEN B. D U MONT LABORATORIES, INC. PA SSA IC N E W JE R S E Y C o p y rig h t 1956 Industrial T u b e Sales D epartm ent A L L E N B. D U M O N T L A B O R A T O R IE S, INC.
|
OCR Scan
|
PDF
|
80-182A
TA2036N
ScansU9X26
Scans-031
rs tube
in3020b
TIL 815
S3 TRIO 3D
cep 6060 r
|
mb86904
Abstract: microsparc SUN MICROELECTRONICS CPGA321 MB8690 STP1012PGA STP1012PGA-85 SPARC v8 architecture BLOCK DIAGRAM sparc v8 STP1012PGA-110
Text: STP1012 S un M icro electro nics J u ly 1 9 9 7 microSPARC -ll DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface D e s c r ip t io n T h e m icroSP A R C -II 32-b it m icro p ro cesso r is a h ig h ly integrated , h ig h -p erfo rm an ce m icroprocessor. Im p le
|
OCR Scan
|
PDF
|
32-Bit
STP1012
STP1012PGA-70A
STP1012PGA-85
STP1012PGA-110
mb86904
microsparc
SUN MICROELECTRONICS
CPGA321
MB8690
STP1012PGA
SPARC v8 architecture BLOCK DIAGRAM
sparc v8
|
HD647180
Abstract: HD647180X0 hitachi hd64180 hitachi hd64 series HD641180X0 HD64180X HD641180 647180X HD647180X HD643180
Text: TH E 64180 FAM ILY HITACHI le n irli: : tri u • i-', 'i.-. ■ *i; : r, . . INDEX HD64180 FAMILY HIGH- INTEGRATION CMOS MICROCONTROLLERS Page HD64180 — Experience Innovation with 2 HD64180 — A System on a Chip 4 The HD64180R1 and HD64180Z 4 ZTAT — Expanding Performance 6
|
OCR Scan
|
PDF
|
HD64180
HD64180
HD64180R1
HD64180Z
HD64180S
DP-64S)
HD647180
HD647180X0
hitachi hd64180
hitachi hd64 series
HD641180X0
HD64180X
HD641180
647180X
HD647180X
HD643180
|
Untitled
Abstract: No abstract text available
Text: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new
|
OCR Scan
|
PDF
|
|