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    LEM LT 308 Search Results

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    LT308-S7

    Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
    Text: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度


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    PDF 308-S7 94-V0 LT308-S7 LT308-S7 LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S

    LEM LT 308

    Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
    Text: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环(补偿)电流传感


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    PDF 308-T7 94-V0 LT308-T7 LEM LT 308 Lem LT 300 LT308-T7 Lem LT 500 t7 308

    Lem LT 300

    Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
    Text: 电流传感器 LT 308-S6 原边和副边之间是绝缘的,用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度


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    PDF 308-S6 94-V0 LT308-S6 Lem LT 300 LT308-S6 308-S6 LEM LT 308 LT308-S

    ssi 202

    Abstract: HER301 HER308 Z03E
    Text: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability


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    PDF HER301 -HER308 157PF MIL-STD-202. ssi 202 HER308 Z03E

    laf 0001

    Abstract: SI 6822 intel 8049 intel 8059 S1 6822 jc-115 intel 8049 microcomputer MCS-48 intel AP-49 TLE 7233
    Text: 1 AP-49 INTRODUCTION T h e Intel M C S -48 fa m ily o f m ic ro c o m p u te rs m arked th e firs t tim e an e ig h t bit c o m p u te r w ith program s torage, d a ta sto rag e, and I/O fa c ilitie s w as ava ila b le on a s in g le LSI chip. T h e p erfo rm an ce o f th e initial


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    PDF AP-49 MCS-48 laf 0001 SI 6822 intel 8049 intel 8059 S1 6822 jc-115 intel 8049 microcomputer intel AP-49 TLE 7233

    TGL 29331

    Abstract: Kombinat VEB Elektronische Bauelemente TGL 31428 bauelemente Kombinat bauelemente DDR TGL-31428 21-1 TGL 24815 TGL 24687 TGL 24815 veb taschenbuch
    Text: Kontakt­ bauelemente Kombinat VEB Elektronische Bauelemente K O N T A K T B A UELEM ENTE In h alt S te c k v e rb in d e r, fla che B a u fo rm Seite 6 H F -R u n d ste ckve rb in d e r 61 N F -R u n d ste ckve rb in d e r 101 L ic h tle ite rs te c k v e rb in d e r


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    KD502

    Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
    Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71


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    PDF 101NU70 102NU70 103NU70 104NU70 105NU70 106NU70 107NU70 101NU71 102NU71 103NU71 KD502 KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46

    1rf820

    Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A
    Text: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign


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    PDF AN707 Si9120 J40401TC 1RF820 2N7000 LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A

    44795

    Abstract: sd 13005
    Text: HTG2AXX HOLTEK r r uC Voice with 1024-Pixel LCD Features 8-bit microcontroller • • • • • • • O p e ra tin g voltage: 2.4V~5.2V 8 K x l6 p ro g ram ROM 208x8 d a ta RAM 16/24 b id ire ctio n a l I/O lines 16-bit p ro g ram m ab le tim e r counter


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    PDF 1024-Pixel 208x8 16-bit 44795 sd 13005

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    VEB mikroelektronik

    Abstract: 4565 D A2005V KP303 KP303D U806D analoge schaltkreise a4100d A209K sf126d
    Text: DATEN BUCH 0 /x *«» Der vorliegende T ite l ist ein w eite re r Band d er D aten­ buch-R eihe Uber die M ikroelektronik. B auelem ente Die A pplikationszentrum R eihe wird Elektronik des im Berlin VEB Kom binat A uftrag des und des VEB M ilitär­ verlages herausgegeben.


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    ipc-16a

    Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
    Text: user benefits PACE features • Simplified pro­ gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe


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    PDF IPC-16A/520D 16-bit 10-word 40-pin latches440498, 737-5000/TWX 1371/Telex 77SS32 ipc-16a DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers

    JD 1803

    Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
    Text: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL


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    CR250J

    Abstract: CR250J24 CR250J-8 CR150DM CR150DM-10 CR150DM-12 CR150DM-24 CR150DM-32 CR150DM-36 CR150DM-4
    Text: - 50 - m ss « CR150 DM— 10 CR150 DM— 12 CR150 DM— 16 CR150DM-20 CR150 DM— 2 4 CRI 50DM—? CR ì 50 DM— 3 2 CRI 50 DM— 3 6 CR150 DM— 4 CR150DM-6 CR150DM-8 CR250DP-4 CR250DP-6 CR250DP-8 CR250J-10 CR2 50 J— 12 CR250J— 16 CR2 50 J— 20 CR250J-24


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    PDF 2-10ms CR150DM-10 CR150DM-12 CR150DMâ CRI50DM-20 H-101 CR250J CR250J24 CR250J-8 CR150DM CR150DM-10 CR150DM-24 CR150DM-32 CR150DM-36 CR150DM-4

    TSS2J2A44S

    Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
    Text: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate


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    PDF 125x125x2m TSS2J2A44S TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S

    SN7401

    Abstract: sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c
    Text: INDEX PAGE TTL Integrated Circuits Mechanical Data 1 TTL Interchangeability Guide 6 Functional Selection Guide 19 Explanation of Function Tables 38 54/74 Families of Compatible TTL Circuits 40 TTL INTEGRATED CIRCUITS MECHANICAL DATA J ceramic dual-in-line package


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    PDF 24-lead SN74S474 SN54S475 SN74S475 SN54S482 SN74S482 LCC4270 SN54490 SN74490 SN54LS490 SN7401 sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c

    IBM "embedded dram"

    Abstract: oki cross MG65P 35x35 bga
    Text: Oki Semiconductor MG63P/64P/65P_ 0.25|im Embedded DRAM/Customer Structured Arrays D ES C R IP TIO N O ki's 0.25 uni M G 6 3 P /6 4 P /6 5 P A pplication-Specific Integrated Circuit ASIC provides the ability to em bed large blocks of Synchronous DRAM (SDRAM ) into an em bedded array architecture called the


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    PDF MG63P/64P/65P_ MG63P/64P/65P proPB14 MG6xPB16 MG6xPB18 MG6xPB20 MG6xPB22 MG6xPB24 MG6xPB26 IBM "embedded dram" oki cross MG65P 35x35 bga

    Untitled

    Abstract: No abstract text available
    Text: IN TE G R A TE D CIRCUITS [nlEET TZA1000 QIC read-write amplifier 1998 M ar 17 P relim inary specification S upersedes data of 1998 Mar 11 File under Integrated C ircuits, IC01 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


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    PDF TZA1000 545102/00/02/pp24

    3 pin preset resistor 10k

    Abstract: LA2600 LC7500 50k preset diagram LC7600 mos 3021 preset resistor 568C LC750 preset resistor 10k
    Text: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic


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    PDF f-74-05-01 LC7500 LA2600. DIP30S 0DD77L3 T-90-20 DIP-24Slim DIP28SN QIP48B 3 pin preset resistor 10k LA2600 50k preset diagram LC7600 mos 3021 preset resistor 568C LC750 preset resistor 10k

    LEM LT 200-S

    Abstract: 7174K LEM LT 308 S7 LC7600
    Text: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic


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    PDF MFP24 QIP48A 00077b3 IP24S MFP30 LEM LT 200-S 7174K LEM LT 308 S7 LC7600

    TA2036N

    Abstract: ScansU9X26 Scans-031 rs tube in3020b TIL 815 S3 TRIO 3D cep 6060 r
    Text: DU MONT INDUSTRIAL CATHODE-RAY TUBES S econ d E dition IN D U S T R IA L T U B E SA LES D E P A R T M E N T ALLEN B. D U MONT LABORATORIES, INC. PA SSA IC N E W JE R S E Y C o p y rig h t 1956 Industrial T u b e Sales D epartm ent A L L E N B. D U M O N T L A B O R A T O R IE S, INC.


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    PDF 80-182A TA2036N ScansU9X26 Scans-031 rs tube in3020b TIL 815 S3 TRIO 3D cep 6060 r

    mb86904

    Abstract: microsparc SUN MICROELECTRONICS CPGA321 MB8690 STP1012PGA STP1012PGA-85 SPARC v8 architecture BLOCK DIAGRAM sparc v8 STP1012PGA-110
    Text: STP1012 S un M icro electro nics J u ly 1 9 9 7 microSPARC -ll DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface D e s c r ip t io n T h e m icroSP A R C -II 32-b it m icro p ro cesso r is a h ig h ly integrated , h ig h -p erfo rm an ce m icroprocessor. Im p le­


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    PDF 32-Bit STP1012 STP1012PGA-70A STP1012PGA-85 STP1012PGA-110 mb86904 microsparc SUN MICROELECTRONICS CPGA321 MB8690 STP1012PGA SPARC v8 architecture BLOCK DIAGRAM sparc v8

    HD647180

    Abstract: HD647180X0 hitachi hd64180 hitachi hd64 series HD641180X0 HD64180X HD641180 647180X HD647180X HD643180
    Text: TH E 64180 FAM ILY HITACHI le n irli: : tri u • i-', 'i.-. ■ *i; : r, . . INDEX HD64180 FAMILY HIGH- INTEGRATION CMOS MICROCONTROLLERS Page HD64180 — Experience Innovation with 2 HD64180 — A System on a Chip 4 The HD64180R1 and HD64180Z 4 ZTAT — Expanding Performance 6


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    PDF HD64180 HD64180 HD64180R1 HD64180Z HD64180S DP-64S) HD647180 HD647180X0 hitachi hd64180 hitachi hd64 series HD641180X0 HD64180X HD641180 647180X HD647180X HD643180

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new


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