LEM2520T
Abstract: lem lc 1000-s LEM 3225 lem 55 LEM inductor LEM LC 300-S LEM LC 500-S
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type
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K40VJ85C
LEM2520T
lem lc 1000-s
LEM 3225
lem 55
LEM inductor
LEM LC 300-S
LEM LC 500-S
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LEM 3225
Abstract: F236
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type inductor.
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K40VJ85C
LEM 3225
F236
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LEMC3225
Abstract: K2534 HP8720B LER015 LEMF2520 LEMF3225 P10-PART LEMC3 LBH1608G2N7D LBH1608G3N3D
Text: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.
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K25VJ85C
LEMC3225
K2534
HP8720B
LER015
LEMF2520
LEMF3225
P10-PART
LEMC3
LBH1608G2N7D
LBH1608G3N3D
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PDF
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HP8720B
Abstract: LEMF2520
Text: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.
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K25VJ85C
106kPa
Temperature20
65M20L
65M5L
20min.
10115min.
HP8720B
LEMF2520
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AD5812
Abstract: LEMF3225 LEMC3225
Text: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LBH SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.
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K25VJ85C
085M0
107M0
157M0
075M0
087M0
059M0
091M0
AD5812
LEMF3225
LEMC3225
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PDF
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Untitled
Abstract: No abstract text available
Text: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.
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K25VJ85C
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LEM2520 2R2M
Abstract: lemc3225
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ
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K25VJ85C
LEM2520 2R2M
lemc3225
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PDF
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Untitled
Abstract: No abstract text available
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ
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Original
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K25VJ85C
LBH1608
059M0
091M0
157M0
178M2
394M0
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PDF
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LEMF3225
Abstract: lemc3225 JIS K 5400 8.3
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS CYLINDRICAL TYPE LE SERIES R TYPE OPERATING TEMP. K25VJ85C 015 TYPE 012, 015 TYPE 特長 FEATURES Yアキシャルリード形インダクタの製造工程Y基本構造を継承した量産性に 優れた高品質のインダクタ
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Original
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K25VJ85C
LER015
079M0
142M0
157M0
LER012
LER015
LEM2520
LEMC2520
LEMF2520
LEMF3225
lemc3225
JIS K 5400 8.3
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PDF
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LC 300-S
Abstract: LEM Components LC 300-S lem transducers lc 300 s LEM LC 300-S lem transducers lc lem lc 300 lc lem Hall Effect Current Measurements Faston 2.8 construction hall effect transducers
Text: Current Transducer LC 300-S IPN = 300 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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300-S
LC 300-S
LEM Components LC 300-S
lem transducers lc 300 s
LEM LC 300-S
lem transducers lc
lem lc 300
lc lem
Hall Effect Current Measurements
Faston 2.8
construction hall effect transducers
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PDF
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LEMC3225
Abstract: LEM2520 LEMF3225 LEMC3 100AH LEM25 JISC0051 ler015
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type
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Original
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K40VJ85C
10acking
LEMC3225
LEM2520
LEMF3225
LEMC3
100AH
LEM25
JISC0051
ler015
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PDF
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Untitled
Abstract: No abstract text available
Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type
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Original
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K40VJ85C
LER012
354M0
LER015
394M0
LEM2520
LEMC2520
LEMF2520
LEMC3225
LEMF3225
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PDF
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Untitled
Abstract: No abstract text available
Text: 巻線チップパワーインダクタ WOUND CHIP POWER INDUCTORS CB SERIES OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YLB / LBC シリーズに対し大電流化に対応しています。小型のDC/DCコン
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K25VJ105C
YCBMF1608
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PDF
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U01A
Abstract: No abstract text available
Text: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C o m p lem en t to KSB564 A • C o llecto r C u rren t lc » 1A • C o llecto r D issip atio n Pc = 800 *rtW TO-82 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating
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OCR Scan
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KSD471A
KSB564
U01A
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PDF
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FCX749
Abstract: No abstract text available
Text: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6
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OCR Scan
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FCX749
FCX649.
-100mA*
-200mA
-100m
-50mA,
-100mA,
100MHz
-500mA,
000fi325
FCX749
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PDF
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FCX649
Abstract: FCX749 lem lc 300
Text: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3
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OCR Scan
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FCX649
FCX749.
100mA
200mA
100mA,
100MHz
500mA,
FCX649
FCX749
lem lc 300
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PDF
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TL65
Abstract: powertech PT-2523 PT-2524 PT2524 q741D PB-500 2524 C-357
Text: 17E » DDD03B3 “BIG IDEAS IN 3 BIG POWER" • ■ ■ PowerTech POWERTECH INC 150 AMPERE TRANSISTOR T -S 3 -IS P T -2 5 2 3 P T -2 5 2 4 FEATURES PT-2524 . 450V . 500V PT-2523 400V . . . 450V . . . Vcbo 6' LONG , 8V 100A 150A .* •
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OCR Scan
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DDD03B3
PT-2523
PT-2524
070lt
PB-500
333Li
TL65
powertech
PT-2523
PT-2524
PT2524
q741D
PB-500
2524
C-357
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PDF
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d 5071 transistor
Abstract: b0507 BD509 BD50 transistor transistor bd509 SC 5071 BD5a BD50 bd 609 transistor BD507
Text: W tW Ö l T ~ S C ^ C X S T R S /R 6367254 » T | b 3 b 7 a s 4 F3- MOTOROLA SÇ_ XST_RS/R F>. 96D 8 0 5 9 9 o o f l ü s n D T -J J - 07 MOTOROLA •a SEM ICO ND U C TO R TECHNICAL DATA N P N S IL IC O N A U D IO T R A N S I S T O R S N P N S IL IC O N A N N U LA R *
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OCR Scan
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BD506,
BD508.
BD510
BD505.
BD505-1.
d 5071 transistor
b0507
BD509
BD50 transistor
transistor bd509
SC 5071
BD5a
BD50
bd 609 transistor
BD507
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PDF
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mrf164
Abstract: MRF164W
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF164W N-Channel Enhancement Mode D e sig n e d p rim a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r sta g e s to 500 M Hz. • G u a ra n te e d P e rfo rm a n ce at 4 0 0 M H z, 28 Vdc
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OCR Scan
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MRF164W
mrf164
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PDF
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transistor KIN
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -AUGUST 1995 Q FEATU RES * Suitable for AF drivers and output stages * High collector current and Low Vct sat( C O M P LEM EN TA R Y T YP E BCP53 PA R TM A R KIN G D E T A ILS BCP56 B C P 5 6 - 10 B C P 5 6 - 16
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OCR Scan
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OT223
BCP53
BCP56
100nA
VCB--30V
500mA,
150mA,
BCP56-10
transistor KIN
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PDF
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F20M
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage
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OCR Scan
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FMMT458
100mA,
r100V
F20M
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PDF
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Untitled
Abstract: No abstract text available
Text: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - O C T O B E R 1995 O FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TY PES - FM M T549 - FM M T449 F M M T 5 4 9 A - N/A
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OCR Scan
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FMMT549
FMMT549A
-50mA,
-500mA,
-100mA,
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR ISSUE 3 - N O V E M B E R 19QR FZT493 O C O M P LEM EN T A R Y TYPE - FZ T 593 P A R T M A R K IN G D E T A IL - FZ T 493 m B ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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OT223
FZT493
500mA,
300us.
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JUNE 1996 FEATU RES * Low equivalent on-resistance; RCEjMti 25 0 m ii at 1A PA R TM A R KIN G D E T A IL S C O M P LEM EN TA R Y T Y P E - 589 FMMT489 ABSOLUTE MAXIMUM RATINGS. PARA M ETER
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OCR Scan
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FMMT489
-10mA*
-100mA*
-200m
-500mA,
-100mA,
100MHz
FMMT54S
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PDF
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