Untitled
Abstract: No abstract text available
Text: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR40045CTS
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Untitled
Abstract: No abstract text available
Text: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR200100CTS
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Untitled
Abstract: No abstract text available
Text: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR40045CTS
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Untitled
Abstract: No abstract text available
Text: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR200100CTS
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Untitled
Abstract: No abstract text available
Text: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR40045CTS
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Untitled
Abstract: No abstract text available
Text: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage
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MBR200100CTS
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CSD20060
Abstract: CSD20060D D 16027 G
Text: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation
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CSD20060
CSD20060,
CSD20060
CSD20060D
D 16027 G
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D 16027 G
Abstract: CSD20060D CSD20060
Text: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation
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CSD20060
CSD20060,
D 16027 G
CSD20060D
CSD20060
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Untitled
Abstract: No abstract text available
Text: CSD20120 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=20A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20120
CSD20120D
CSD20120,
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C2D20120
Abstract: D20120 C2D20120D
Text: C2D20120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120
1200-Volt
O-247-3
C2D20120D
D20120
C2D20120D
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CSD20030
Abstract: CSD20030D D 16027 G
Text: PRELIMINARY CSD20030 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD20030
CSD20030,
CSD20030
CSD20030D
D 16027 G
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CSD20120
Abstract: CSD20120D
Text: PRELIMINARY CSD20120 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD20120
CSD20120,
CSD20120
CSD20120D
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D 16027 G
Abstract: No abstract text available
Text: CSD20060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=20A Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20060
CSD20060D
CSD20060,
D 16027 G
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Untitled
Abstract: No abstract text available
Text: SCS220KE2 SiC Schottky Barrier Diode Datasheet Outline VR 1200V IF 10A/20A* QC 34nC Per leg TO-247 *(Per leg / Both legs) (1) (2) (3) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode
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SCS220KE2
0A/20A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation
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CSD20060
CSD20060,
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Untitled
Abstract: No abstract text available
Text: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation
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CSD20060
CSD20060D
CSD20060,
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SCS240KE2
Abstract: No abstract text available
Text: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode
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SCS240KE2
0A/40A*
O-247
R1102B
SCS240KE2
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D 16027 G
Abstract: No abstract text available
Text: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation
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CSD20060
CSD20060,
D 16027 G
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Untitled
Abstract: No abstract text available
Text: CSD10120D Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=10A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD10120D
CSD10120D,
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Broken Conductor Detection for Overhead Line Distribution System
Abstract: rel 511 REL511 RTXP 18 cutout pa1400 RL110 RL220 U131 IEC 60255 power supply microscada abb
Text: REL 511 C*2.0 1 MAK 506 024-BEN Page 1 Issued Apri/1999 Status: New Data subjecllo change withoui nolice SE 95 02 07 Features .Line distance functionality comprises; -simultaneous measurement of the different phase. phase and phase. earth impedances with numerical measuring
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024-BEN
Apri/1999
003-BEN
606003-UEN
002-REN
5111o57-BEN
5111014-BEN
CAP531
lMRK5111056-BEN
Broken Conductor Detection for Overhead Line Distribution System
rel 511
REL511
RTXP 18 cutout
pa1400
RL110
RL220
U131
IEC 60255 power supply
microscada abb
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CSD20030 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency
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CSD20030
CSD20030D
CSD20030,
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C3D20060D
Abstract: C3D10060 C3D20060
Text: C3D20060D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = IF; TC<135˚C = 28 A Qc Features • • • • • • • 600 V = 50 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D20060D
600-Volt
O-247-3
000W-4000W
5HP-10HP
C3D10060
C3D20060
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3 phase UPS
Abstract: 4410 mosfet induction heating mosfet driver circuits isolated half bridge igbt gate driver MOSFET welding INVERTER
Text: Integrateci Circuits ISOSMART Half Bridge Driver Chipset, IXBD 4410 and 4411 Features • 1200 V or greater low- to high-side isolation ■ Drives power systems operating from industrial AC mains ■ dv/dt immunity of greater than 50 V/ns ■ Proprietary low- to high-side level-translation and communication
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16-Pin
3 phase UPS
4410 mosfet
induction heating mosfet driver circuits
isolated half bridge igbt gate driver
MOSFET welding INVERTER
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SO47
Abstract: BTS 4411 UPS FERRITE
Text: Integrated Circuits ISOSMART8 Half Bridge Driver Chipset, IXBD 4410 and 4411 Features • 1200 V or greater low- to high-side isolation • Drives power systems operating from industrial AC mains • dv/dt immunity of greater than 50 V/ns • Proprietary low- to high-side level-translation and communication
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IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
16-Pin
SO47
BTS 4411
UPS FERRITE
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