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    LED AND PHOTOTRANSISTOR PAIR Search Results

    LED AND PHOTOTRANSISTOR PAIR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    LED AND PHOTOTRANSISTOR PAIR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ET9570

    Abstract: ET9571 app-d2 IC-Haus Gmbh
    Text: 3 CHANNEL DIFFERENTIAL AMPLIFIER-COMPARATOR ET9571 Phototransistor input version of the standard ET9570 FEATURES • Supply Voltage Range 4.5V to 30V • Designed for phototransistor inputs • Index channel gated by A and B • Current sink for LED drive (see application note


    Original     		PDF ET9571 ET9570) D-55294 ET9570 ET9571 app-d2 IC-Haus Gmbh

    IL215At

    Abstract: No abstract text available
    Text: IL215AT/IL216AT/IL217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL215AT/IL216AT/IL217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including


    Original     		PDF IL215AT/IL216AT/IL217AT 2002/95/EC 2002/96/EC i179002 IL215AT/IL216AT/IL217AT 08-Apr-05 IL215At

    LETEX

    Abstract: LA211
    Text: Photocoupler Part Name: LA211 LA211 photocoupler is an optically coupled pair employing a GaAs infrared LED and a silicon NPN phototransistor. Features ˙SOP package 4 Pin type in miniature design ˙80% minimun current transfer ratio ˙1500Vrms Input/Output isolation


    Original     		PDF LA211 LA211 1500Vrms LETEX

    Untitled

    Abstract: No abstract text available
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ)

    OP598

    Abstract: led and phototransistor pair number led phototransistor 3 pin OPB100 infrared sensor 190
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ) OP598 led and phototransistor pair number led phototransistor 3 pin infrared sensor 190

    LETEX

    Abstract: LA311
    Text: Photocoupler Part Name: LA311 Description LA311 photocoupler is an optically coupled pair employing a GaAs in infrared LED and silicon NPN phototransistor. Features ‧SOP package 8 Pin type in miniature design ‧80% minimun current transfer ratio ‧1500V rms Input/Output isolation


    Original     		PDF LA311 LA311 LETEX

    led phototransistor pair

    Abstract: LED phototransistor IC PACKAGE all datasheet phototransistor current sensor data sheet IR LED infrared led datasheet LED infrared Infrared Phototransistor phototransistor sensor IR LED infrared led CC 1215
    Text: Optical Emitter and Sensor Pair Features • • • • • • 890nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance up to 12 inches Low profile package 24” wire leads UL1429 , 26 AWG Description Absolute Maximum Ratings


    Original     		PDF 890nm UL1429) OPB100 OPB100-E) OPB100-S) led phototransistor pair LED phototransistor IC PACKAGE all datasheet phototransistor current sensor data sheet IR LED infrared led datasheet LED infrared Infrared Phototransistor phototransistor sensor IR LED infrared led CC 1215

    OPB100EZ

    Abstract: led and phototransistor pair number opb100-sz
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100-EZ, OPB100-SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100-EZ, OPB100-SZ OPB100Z OPB100-EZ) OPB100-SZ) OPB100EZ led and phototransistor pair number opb100-sz

    led and phototransistor pair number

    Abstract: OP598 transistor 24 led phototransistor pair OPB100 OP298 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ) led and phototransistor pair number OP598 transistor 24 led phototransistor pair OP298 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z

    Untitled

    Abstract: No abstract text available
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ)

    led and phototransistor pair number

    Abstract: transistor 24 led phototransistor pair OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ) led and phototransistor pair number transistor 24 led phototransistor pair OP298 OP598 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z

    led phototransistor 3 pin

    Abstract: OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z led and phototransistor pair number
    Text: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads


    Original     		PDF OPB100Z, OPB100EZ, OPB100SZ OPB100 OPB100EZ) OPB100SZ) led phototransistor 3 pin OP298 OP598 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z led and phototransistor pair number

    OPB100

    Abstract: OPB100-E OPB100-S OP298 OP598
    Text: Optical Emitter and Sensor Pair OPB100, OPB100-E, OPB100-S Technical Data Features • • • • • • 890nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance up to 12 inches Low profile package 24” wire leads UL1429 , 26 AWG


    Original     		PDF OPB100, OPB100-E, OPB100-S 890nm UL1429) OPB100-E OPB100 OPB100-E) OPB100-S) OPB100-E OPB100-S OP298 OP598

    CC 1215

    Abstract: No abstract text available
    Text: Optical Emitter and Sensor Pair OPB100, OPB100-E, OPB100-S Technical Data Features • • • • • • 890nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance up to 12 inches Low profile package 24” wire leads UL1429 , 26 AWG


    Original     		PDF OPB100, OPB100-E, OPB100-S 890nm UL1429) OPB100-E OPB100 OPB100-E) OPB100-S) CC 1215

    OPB200

    Abstract: No abstract text available
    Text: Slotted Optical Switch OPB200 Features: • Housing material Opaque to visible and infrared light • Non–contact switching Product Photo Here • Printed PCBoard mount • 0.200” 5.080 mm slot width, 0.320” (8.128 mm) slot depth Description: OPB200 contains an Infrared LED and a Phototransistor paired in a plastic housing .


    Original     		PDF OPB200 OPB200

    IL216AT

    Abstract: led phototransistor pairs without optocoupler IL215AT IL217AT VDE0884
    Text: IL215AT/IL216AT/IL217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL215AT/IL216AT/IL217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a


    Original     		PDF IL215AT/IL216AT/IL217AT i179002 IL215AT/IL216AT/IL217AT IL215AT/IL216AT/ IL217AT 08-Apr-05 IL216AT led phototransistor pairs without optocoupler IL215AT VDE0884

    Untitled

    Abstract: No abstract text available
    Text: Slotted Optical Switch OPB200 Features: • • • • Housing material Opaque to visible and infrared light Non–contact switching Product Photo Here Printed PCBoard mount 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.


    Original     		PDF OPB200 OPB200

    OPB200

    Abstract: OP140 OP550
    Text: Slotted Optical Switch OPB200 Features: x Housing material Opaque to visible and infrared light x Non–contact switching x Printed PCBoard mount Product Photo Here x 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.


    Original     		PDF OPB200 OPB200 OP140 OP550

    Untitled

    Abstract: No abstract text available
    Text: IL211AT/212AT/213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL211AT/IL212AT/IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon


    Original     		PDF IL211AT/212AT/213AT i179002 IL211AT/IL212AT/IL213AT IL211AT/IL212AT/IL213AT 08-Apr-05

    led phototransistor pairs without optocoupler

    Abstract: VDE0884 IL211AT IL212AT IL213AT
    Text: IL211AT/212AT/213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL211AT/IL212AT/IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon


    Original     		PDF IL211AT/212AT/213AT i179002 IL211AT/IL212AT/IL213AT IL211AT/IL212AT/ IL213AT 08-Apr-05 led phototransistor pairs without optocoupler VDE0884 IL211AT IL212AT

    led phototransistor pair

    Abstract: IR phototransistor
    Text: M0C2000 Advance Information HERMETIC OPTOELECTRONIC COUPLER PHOTOTRANSISTOR/IR LED COUPLED PAIR NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . G a lliu m A rs en id e L E D o p tic a lly c o u p led to a S ilic o n P h o to T r a n ­ sistor designed fo r a p p lic a tio n s re q u irin g e le c tric a l iso la tio n , highc u rre n t tra n s fe r ra tio s , small package size and


    OCR Scan     		PDF M0C2000 led phototransistor pair IR phototransistor

    PHOTOTRANSISTOR 3 LEGS

    Abstract: EE-SX1235-P2 IR sensor and photo diode pair Electric Welding Machine diagram EE-SA401-P welding machine diagram
    Text: omRon Technical Information Technical Information Non-amplified Output Sensing Methods Features Operating principle Sensing method Transmissive A pair of light source element LED and detector element (phototransistor) opposing each other on the same optical axis is housed in a case to


    OCR Scan     		PDF

    all type transistor equivalent

    Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
    Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the


    OCR Scan     		PDF

    OP550

    Abstract: OPS690 OPS691 OPS692 OPS693 QPS690
    Text: OPTEK Product Bulletin OPS690 July 1996 LED and Photosensor Pair Types OPS69Q, OPS691, OPS692, OPS693 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Lateral side-looking clear plastic package • High current transfer ratio • Low cost plastic package


    OCR Scan     		PDF OPS690 QPS690, OPS691, OPS692, OPS693 OPS693 OP550) 895nm OP550 OPS691 OPS692 QPS690