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    LE25FV101T Search Results

    LE25FV101T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LE25FV101T Sanyo Semiconductor 1M (128k words x 8-Bits) Serial Flash EEPROM Original PDF

    LE25FV101T Datasheets Context Search

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    LE25FV101T

    Abstract: No abstract text available
    Text: Preliminary Specifications CMOS LSI LE25FV101T 1M 128k words x 8bits Serial Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption


    Original
    PDF LE25FV101T 10MHz 225mil) LE25FV101T

    M25P08

    Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
    Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010


    Original
    PDF SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 W29EE512 SST39SF010; SST29EE010 AM29F010, M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120