BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

13001 6D 331

Abstract: 13001 8D 331 13001 s 8d
Contextual Info: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e

diode D214

Abstract: ZX-08
Contextual Info: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e

thyristor YS 160 004

Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

IPM module lg

Abstract: diode gi 9300 irf 5110 ScansUX7 D183 D184 D185 HALF WAVE 45 E 57 20-C1V D187 D188
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

2114 static ram

Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
Contextual Info: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no

transistor d2118

Abstract: D2118 D2118 transistor
Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for

transistor d2118

Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3

V23500-D2113-P411

Abstract: V23500-D2123-P411 V23500-D9001-P411 V23500-D9002-P411 1392012-4
Contextual Info: 2 4 3 5 7 6 g o 11 12 Section A - A A A 24.8 ±0.05 B B N A C C D B E Y* n LJ o ro m S œ o 8 •£ - 17x 1.25 E 21.25 Cross reference tabel To ro i_ n CN¡ F old part number contact assignment 2 3) Card performance thickness level 1393755-2 V23500-D2113-P411

la 78042

Abstract: uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd
Contextual Info: in te r APPLICATION BRIEF AB-41 Septem ber 1988 lntel C o rp o ra tio n m akes no w a rranty for the use o f its p ro d u c ts and assurnes no responsibility fo r any erro rs w hich m ay app ear in th is d o c u m e n t nor d o e s it m a k e a c o m m itm e n t to u p d a te the in fo rm a tio n c o n ta in e d herein

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

1n4007 t7

Abstract: t04 68 3 pin controller 526Ch diode T35 12H E1 PCM encoder t04 68 3 pin diode L3235N STLC3080 STLC5048 TQFP64
Contextual Info: STLC5048 Fully programmable four-channel codec and filter Features • Fully programmable monolithic 4-channel codec/filter ■ Single +3.3 V supply ■ A/m law programmable ■ Linear coding 16 bits option ■ PCM highway format automatically detected:

intel 2114 static ram

Abstract: ac 1501-50 M2114L2 intel 2114 M2114L MD2114 MD2114L2 m2114 MD2114L MD2114L3
Contextual Info: DfflÜ^DIL M 2114L 4 0 9 6 B it 1 0 2 4 x 4 NMOS S ta tic RAM FEATURES DESCRIPTION • • • • • • • The M2114L is a 4096-bit static Random Access Memory organized 1024 words x 4 bits. The storage cells and decode and control circuitry are completely

Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a

Contextual Info: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit HITACHI ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The

Contextual Info: TOSHIBA TC51V8512AF/AFT/ATR-12/15 P R E L IM IN A R Y SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

power supply DVD schematic diagram

Abstract: IC351 ic811 ic604 dvd drive schematic ic806 power supply schematic diagram S2LA20 IC-303 d313
Contextual Info: DVP-C600D RMT-D104A SERVICE MANUAL US Model Canadian Model Mexican Model SPECIFICATIONS CD/DVD PLAYER MICROFILM DVP-C600D TK-48 RF, SERVO 1 SCHEMATIC DIAGRAM – Ref. No.: TK-48 board; 3,000 series – • Waveforms 1 IC006 %¡ – % (DVD play) 4 IC005 !£ (CD play)

TRANSISTOR D206

Abstract: 8512A transistor D209 LA 8512 TC51V8512
Contextual Info: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F

le2m

Abstract: BD251
Contextual Info: LE2M Z LF3347 Ijh v iü l- S IN u u H H ü H A High-Speed Image Filter with Coefficient RAM I hl □ 83 M H z D ata In p u t and C o m p u ta­ tio n Rate □ Four 1 2 x 1 2-bit M ultipliers w ith Individual Data and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks

ci 2114

Abstract: 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM
Contextual Info: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS Static RAM M1KR5H. D E S C R IP T IO N FEA TU R ES • Cycle Time Equal to Access Time • Completely Static • No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

W184

Abstract: W185 W185-5 hjc 0.1uf
Contextual Info: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six 1.25%, 3.75%, or 0% down or center spread outputs

W184

Abstract: W185
Contextual Info: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs

Contextual Info: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs