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    LDMOS TECHNOLOGY FOR RF POWER AMPLIFIERS Search Results

    LDMOS TECHNOLOGY FOR RF POWER AMPLIFIERS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    LDMOS TECHNOLOGY FOR RF POWER AMPLIFIERS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LDMOS Technology for RF Power Amplifiers NXP Semiconductors LDMOS technology for RF power amplifiers Original PDF

    LDMOS TECHNOLOGY FOR RF POWER AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD57045

    Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
    Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,


    Original     		PDF AN1224 SD57045, SD57045 CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer

    CAPACITOR 33PF

    Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
    Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,


    Original     		PDF AN1224 SD57045, CAPACITOR 33PF SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils

    Untitled

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has


    Original     		PDF

    08051J5R6BBT

    Abstract: j452 cms 920
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 08051J5R6BBT j452 cms 920

    J293

    Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its


    Original     		PDF MWIC930 MWIC930R1 MWIC930GR1 J293 ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT

    MRF6VP11KH

    Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf
    Text: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,


    Original     		PDF BR1593 MRF6VP11KH MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf

    MWIC930

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its


    Original     		PDF MWIC930 MWIC930R1 MWIC930GR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip


    Original     		PDF MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    3332-G

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 3332-G

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip


    Original     		PDF MW5IC2030 885load* MW5IC2030MBR1 MW5IC2030GMBR1

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage


    Original     		PDF MW4IC915 MW4IC915MB/GMB MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    J344

    Abstract: J530
    Text: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its


    Original     		PDF MWIC930 MWIC930NR1 MWIC930GNR1 MWIC930R1 MWIC930GR1 J344 J530

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    mw4ic915nb

    Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1 mw4ic915nb AN1977 AN1987 MW4IC915GNBR1 A113 AN1955 ic marking z7 GM 950 motorola

    020C

    Abstract: AN1955 AN1987 MWIC930 MWIC930GR1 MWIC930R1 A 2057
    Text: Freescale Semiconductor Technical Data MWIC930 Rev. 2, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its


    Original     		PDF MWIC930 MWIC930 MWIC930R1 MWIC930GR1 020C AN1955 AN1987 MWIC930GR1 A 2057

    J252

    Abstract: A113 AN1955 AN1987 MWIC930 MWIC930GNR1 MWIC930GR1 MWIC930NR1 MWIC930R1
    Text: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its


    Original     		PDF MWIC930 MWIC930 MWIC930NR1 MWIC930GNR1 MWIC930R1 MWIC930GR1 J252 A113 AN1955 AN1987 MWIC930GR1

    1206 cms diode

    Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1

    ATC100A101JW

    Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
    Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology


    Original     		PDF NE5531079A NE5531079A HS350-P3 WS260 IR260 PU10752EJ01V0DS ATC100A101JW ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


    Original     		PDF NE5520279A NE5520279A DCS1800 IR260 VP215 WS260 HS350-P3 PU10123EJ03V0DS

    NE552R479A-T1A

    Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		PDF NE552R479A NE552R479A NE552R479A-T1A VP215 GSM1900 NE552R479A-T1 ldmos nec