ne554
Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
ne554
NE55410GR-T3-AZ
TL12
TL13
TL15
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Untitled
Abstract: No abstract text available
Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
PU10542EJ02V0DS
IR260
WS260
HS350
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ldmos nec
Abstract: No abstract text available
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
ldmos nec
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ldmos nec
Abstract: No abstract text available
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
ldmos nec
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NE55410GR-T3-AZ
Abstract: TL15 NE55410GR NE55410 ldmos nec
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
NE55410GR-T3-AZ
TL15
NE55410
ldmos nec
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NEM090603M-28
Abstract: No abstract text available
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station
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NEM090603M-28
NEM090603M-28
PU10467EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: RF Power Amplifier PA Bias Controller X9470 FEATURES DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP
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24-pin
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X9470
Abstract: X9470V24I
Text: Preliminary Information RF Power Amplifier PA Bias Controller X9470 DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP
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X9470
X9470
X9470V24I
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NEC 09030
Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are
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NEM090303M-28
NEM090303M-28
PU10312EJ01V0DS
NEC 09030
8712 RESISTOR
ldmos nec
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Untitled
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has
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SLD2083CZ
Abstract: No abstract text available
Text: Preliminary Product Description SLD2083CZ The SLD2083CZ is a 10W high performance LDMOS transistor designed for operation from 300MHz to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD2083CZ is typically used in the design of driver stages for
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SLD2083CZ
300MHz
2200MHz.
SLD2083CZ
EDS-103754
RF083
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transistor smd 303
Abstract: smd 303 transistor smd transistor "3w" RF083 SLD1083CZ
Text: Preliminary Product Description SLD1083CZ The SLD1083CZ is a 3W high performance LDMOS transistor designed for operation from 300MHz to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD1083CZ is typically used in the design of driver stages for
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SLD1083CZ
300MHz
2200MHz.
SLD1083CZ
EDS-104013
RF083
transistor smd 303
smd 303 transistor
smd transistor "3w"
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bare Die mosfet
Abstract: SLD1083 MOSFET 20 NE 50 Z
Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for
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SLD-1000
2700MHz.
SLD-1000
AN-039
EDS-104291
bare Die mosfet
SLD1083
MOSFET 20 NE 50 Z
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1000 watt mosfet power amplifier
Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for
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SLD-1000
SLD-1000
2700MHz.
EDS-104291
AN-039
1000 watt mosfet power amplifier
MOSFET 20 NE 50 Z
80021
SLD-1083CZ
1000 watts amplifier schematic diagram with part
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1000 watt mosfet power amplifier
Abstract: amplifier circuit diagram 1000 watt 80021 SLD-1000 SLD-1083CZ AN-039 1000 watts amplifier schematic diagram with part rf amplifier class a fet mosfet bare Die power mosfet
Text: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for
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SLD-1000
SLD-1000
2700MHz.
EDS-104291
AN-039
1000 watt mosfet power amplifier
amplifier circuit diagram 1000 watt
80021
SLD-1083CZ
AN-039
1000 watts amplifier schematic diagram with part
rf amplifier class a fet mosfet
bare Die power mosfet
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video balun schematic
Abstract: LDMOS 60W POWER AMPLIFIER GSM repeater circuit SDM-09060-B1F video balun AN067
Text: SDM-09060-B1F 925-960 MHz Class AB 60W Power Amplifier Module Product Description The SDM-09060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a
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SDM-09060-B1F
SDM-09060-B1F
AN054
EDS-104211
200oC
video balun schematic
LDMOS
60W POWER AMPLIFIER
GSM repeater circuit
video balun
AN067
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Untitled
Abstract: No abstract text available
Text: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage.
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SDM-08060-B1F
SDM-08060-B1F
EDS-104208
AN054,
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08120
Abstract: SDM-08120
Text: SDM-08120 Product Description 869-894 MHz Class AB 120W Power Amplifier Module The SDM-08120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a
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SDM-08120
SDM-08120
AN054,
EDS-103346
08120
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800w rf power amplifier circuit diagram
Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in
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1990s.
2010are
50VRFLDMOSWP
800w rf power amplifier circuit diagram
MRF6VP11KH
1000w power amplifier circuit diagram
200W PUSH-PULL
1000w power AMPLIFIER pcb circuit
amplifier circuit diagram class D 1000w
500w FM power amplifier circuit diagram
MRFE6VP6300H
RF Amplifier 500w 175 mhz
1000w class d circuit diagram schematics
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motherboard repair Chip level
Abstract: CMOS090 CMOS065 gsm based digital notice board using arm processor baseband GSM BTS 3G CHIP GENERATION TELECOM RF gsm transceiver IC qubic4
Text: Philips Semiconductors Our comprehensive portfolio RF ASICs Converters Complete portfolio of ASIC services. Right expertise, processes, tools and manufacturing to tackle 3G challenges. Customer-driven DAC & ADC for high performance and system innovations.
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GSM repeater circuit
Abstract: LDMOS push pull SDM-08060-B1F
Text: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high
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SDM-08060-B1F
SDM-08060-B1FY
SDM-08060-B1F
Bal45
EDS-104208
AN054,
GSM repeater circuit
LDMOS push pull
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LDMOS push pull
Abstract: SDM-09060-B1F RF power amplifier MHz
Text: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power
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SDM-09060-B1F
SDM-09060-B1FY
SDM-09060-B1F
Gnd-45
EDS-104211
AN054,
LDMOS push pull
RF power amplifier MHz
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Untitled
Abstract: No abstract text available
Text: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high
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SDM-08060-B1F
SDM-08060-B1FY
EDS-104208
AN054,
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BLC5G22LS-100
Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for
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