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    LDMOS 90W Search Results

    LDMOS 90W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GA3366-BL Coilcraft Inc SMPS Transformer, 90W, ROHS COMPLIANT Visit Coilcraft Inc
    ISL6726EVAL2Z Renesas Electronics Corporation 24V to 12V 90W Active Clamp Forward DC/DC Converter Evaluation Board Visit Renesas Electronics Corporation
    iW3627-01 Renesas Electronics Corporation Digital Constant-Voltage Offline PWM Controller with Power Factor Correction for Applications up to 90W Visit Renesas Electronics Corporation
    iW3636-31 Renesas Electronics Corporation Low BOM Cost 0-10V Dimmable SSL LED Driver for Commercial Lighting up to 90W Visit Renesas Electronics Corporation
    iW3636-01 Renesas Electronics Corporation Low BOM Cost 0-10V Dimmable SSL LED Driver for Commercial Lighting up to 90W Visit Renesas Electronics Corporation

    LDMOS 90W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800w rf power amplifier circuit diagram

    Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
    Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in


    Original     		PDF 1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics

    5.1 audio power amplifier 400w

    Abstract: MRFA 2604 LDU400C LDU400C-R amplifier 400W MRF377 RF amplifier 400W 300w rf amplifier LDMOS digital GR002
    Text: LDU400C-R 400W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • • • • • •


    Original     		PDF LDU400C-R 27dBc MRF377 115x85x5 GR00254 5.1 audio power amplifier 400w MRFA 2604 LDU400C LDU400C-R amplifier 400W RF amplifier 400W 300w rf amplifier LDMOS digital GR002

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Pallet UHF Power Amplifier

    Abstract: RF GAIN LTD transistor A 928 transistor 928 Single-Stage amplifier
    Text: RFGP-P01-75L 90W Class AB UHF Paging Amplifier Designed for 930 MHz paging base station transmitters, this single-stage, amplifier pallet incorporates microstrip technology and discrete LDMOS transistor with gold metallization to enhance ruggedness and reliability.


    Original     		PDF RFGP-P01-75L 40W267 Pallet UHF Power Amplifier RF GAIN LTD transistor A 928 transistor 928 Single-Stage amplifier

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 1930 — 1990 MHz, 90W, 26V 10/31/03 MAPLST1920-090CF Preliminary Package Style Features Designed for base station applications in the 1930-1990 MHz frequency range. This product can be used for TDMA, CDMA, or EDGE/


    Original     		PDF MAPLST1920-090CF 1990MHz, 900mA:

    1800 ldmos

    Abstract: MAPLST1819-090CF MAPLST1820-090CF
    Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 MAPLST1820-090CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier


    Original     		PDF MAPLST1820-090CF 1805-1880MHz 1930-1990MHz 1880MHz, 900mA: P-240 MAPLST1819-090CF 1800 ldmos MAPLST1819-090CF MAPLST1820-090CF

    MAPLST0810-90CF

    Abstract: MAPLST0810-090CF
    Text: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V 5/14/04 MAPLST0810-090CF Preliminary Features Q Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:


    Original     		PDF MAPLST0810-090CF 960MHz, 26VDC: 900MHz P-238 MAPLST0810-90CF MAPLST0810-90CF MAPLST0810-090CF

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090WF 28VDC, -45dB 096MHz) 2110MHz)

    ATC100B

    Abstract: MAPLST2122-090CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1

    P220E

    Abstract: infineon smd package
    Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF180901E PTF180901F 90-watt P220E infineon smd package

    ATC700a

    Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		PDF BLF2022-90; OT502A AN01001 ATC700a J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier

    marking C8 amplifier

    Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		PDF BLF2022-90; OT502A AN01001 marking C8 amplifier ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

    BGF1801-10

    Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
    Text: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for


    Original     		PDF

    RFMD HEMT GaN SiC

    Abstract: Gan hemt transistor RFMD LDMOS 90W
    Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3933D90 RF3933D 96mmx2 52mmx0 RF3933D DS110520 RFMD HEMT GaN SiC Gan hemt transistor RFMD LDMOS 90W

    Untitled

    Abstract: No abstract text available
    Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance


    Original     		PDF RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520

    EI -40C

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		PDF RF3933 DS120306 EI -40C

    BW030

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power>90W  Advanced Heat-Sink Technology 


    Original     		PDF RFG1M20090 RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS110620 BW030

    ATC100B100JT

    Abstract: ATC100B1R8BT alt110
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>120W Advanced Heat-Sink Technology


    Original     		PDF RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm ATC100B100JT ATC100B1R8BT alt110

    LDMOS 90W

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		PDF RF3933 RF3933 DS120306 LDMOS 90W

    schematic diagram 48v bldc motor speed controller

    Abstract: power supply DVD schematic diagram ic viper 22 A fault finding all type of lcd tv file VIPER53 circuit diagram of smps 400w DESKTOP auto cut off circuity diagram 48v battery charger 3v battery mini motor speed control circuit diagram schematic diagram ac-dc welding inverter CIRCUIT Hdmi to micro usb wiring diagram VIPER22A for DVD out put of 12v and 5v
    Text: www.st.com/express INDUSTRIAL AND MULTISEGMENT PRODUCTS 2. TDE1708DFT Power Switch 3. L6726A & L6727 Buck Controllers 4. practiSPIN 19. STR750 Motor Control Kit 20. USB Developer Kit 21. ST7FLiteUO Design Tool 5. L6562A PFC Controller 22. 1Mbit Serial EEPROM


    Original     		PDF TDE1708DFT L6726A L6727 STR750 L6562A PM6670 STMPE2401 24-bit STHDMI002A ST2G3236 schematic diagram 48v bldc motor speed controller power supply DVD schematic diagram ic viper 22 A fault finding all type of lcd tv file VIPER53 circuit diagram of smps 400w DESKTOP auto cut off circuity diagram 48v battery charger 3v battery mini motor speed control circuit diagram schematic diagram ac-dc welding inverter CIRCUIT Hdmi to micro usb wiring diagram VIPER22A for DVD out put of 12v and 5v