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    Siemens RS 1001 L

    Abstract: SFH2030
    Text: SIEMENS LD274 LD275 GaAs INFRARED EMITTER * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation in Near Infrared Range O p e r a tin g /S to ra g e T e m p e r a tu r e R a n g e T o p , Ts t g * High Efficiency


    OCR Scan     		PDF LD274 LD275 LD274: LD275: SFH484 BP103B, SFH415, SFH485, Siemens RS 1001 L SFH2030

    Untitled

    Abstract: No abstract text available
    Text: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )


    OCR Scan     		PDF LD274 fl235b05 LD274/275

    LD275 led

    Abstract: LD275 LD274 in3050 SFH41S marking LEM SFH2030
    Text: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Chip Portion •024(0«) 01« (0.4) 03t (OB) .016(0.4) J._ 1. .232(5.9) .217(55) .18# (4.81 1 8 S (« ) i 200(5.1) » k* v y y r .071 (\£ l .o/i d.ej .047 f l -2) 047 (1.2) LD274


    OCR Scan     		PDF LD274 LD275 LD274 LD274, LD27S LD274: LD275: SFH484 LD275 led LD275 in3050 SFH41S marking LEM SFH2030