C100
Abstract: C101 C102 C103 C104 C105 E5052 LMX2531 LMX2531LQ1146E C102 M 932
Text: LMX2531LQ1146E Evaluation Board Operating Instructions National Semiconductor Corporation Timing Devices Business Group 10333 North Meridian Suite 400 Indianapolis, IN 46290 LMX2531LQ1146EFPEB Rev 3.31.2008 L M X 2 5 3 1 L Q 1 1 4 6 E E V A L U A T I O N B O A R D
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LMX2531LQ1146E
LMX2531LQ1146EFPEB
C100
C101
C102
C103
C104
C105
E5052
LMX2531
LMX2531LQ1146E
C102 M 932
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Untitled
Abstract: No abstract text available
Text: LMX2531LQ1146E Evaluation Board Operating Instructions National Semiconductor Corporation Timing Devices Business Group 10333 North Meridian Suite 400 Indianapolis, IN 46290 LMX2531LQ1146EFPEB Rev 3.31.2008 L M X 2 5 3 1 L Q 1 1 4 6 E E V A L U A T I O N B O A R D
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LMX2531LQ1146E
LMX2531LQ1146EFPEB
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po48
Abstract: QFP64-P-1414-0
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: surfeeleds TM General Information CORPORATE PROFILE TABLE OF CONTENTS Lumex products are designed and produced to assist engi neers with the challenging task to come up with effective and Led R aw Die . 3-5 attractive "user" interface design solutions for their products. All
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SML-LX15
OT-23
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LED 1 PDLARITY PIN 15 PIN 16 CDLDR + YELLDW - LED 2 PDLARITY PIN 18 CDLDR PIN 17
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2002/95/EC
100MHz
100DHMS
lMHz-30MHz
60MHz-80MHz
0845-2D1T-AU
0845-2D1T-AU
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Untitled
Abstract: No abstract text available
Text: tile Rechte vorbehalten/ 411 rights reserred 1 3 2 | 4 5 6 G e s a m l i a n q e im v e r s c h r a u b t e n Z u s t a n d ca . 4 4 . 8 n n n complete length when assembled app. U,8mm L X iSSW15 SW17 S t e c k g e s i c h t n. width across flats 15 width across
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iSSW15
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ hit rights reserrei 2 A 3 X k I 5 6 Ge s a mt l a nq e im v e r s c h r a u b t e n Z us t a nd c a. 41,3mm Complete length when assembled app. 61,3mm 1 11 X OsJ SW17 SW15 width across flats 17 - f 1 1 M o n t a g e h i l f e w i r d l os e b e i g e l e g t
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D-32339
M12-L
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MM5736
Abstract: DS8877 DS8877N National mm5736 mm57 VLN 2003 MM573
Text: Display Controllers/Drivers DS8877 National Semiconductor DS8877 6-Dig it LED Driver General Description Features The DS8877 is a 6 -d ig it L E D d rive r designed as a pinfo r-p in replacem ent fo r th e D S 75492 in a pp licatio n s where d ig it cu rre n t is in the 5 to 50 m A range. Since the
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DS8877
DS8877
DS75492
DS8877N
MM5736
National mm5736
mm57
VLN 2003
MM573
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M1106
Abstract: LH918 M1105
Text: M 1105/6/7/8 • OVERVIEW The M l 106 series is Melody C-MOS LSI for playing musical tune with LEDs blinking function. 3 kinds of remarkable playing modes can be selectable by bonding option with extremely low current consumption after playing by the oscillation stop function and by the shifting function of
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M1105/6/7/8
300Ki2/l
90KQ/1
M1106
LH918
M1105
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0447c
Abstract: sda90136 SDA-90136 24181 9013G
Text: 10 O î $ Cl <> NO. OF C KTS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 PART NUMBERS PLATING TYPE A PLATING TYP E E PLATING T YP E F 90136-1101 -1102 -1103 - 1104 -1105 -1106 - 1107 -1108 -1109 - 11 10 90136-1201 -1202 - 1203 - 1204 - 1205 - 1206 - 1207
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9013G-1232
SDA-90136
0447c
sda90136
24181
9013G
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LEDI P IN 2 7 - LED2 P D LA R IT Y P IN 2 8 + C D LD R GREEN P IN 2 9 + E L E C T R I C A L CHARACTERISTICS
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100kHz
100nVRMS
100MHz
lMHz-30MHz
30MHz-60MHz
60MHz-80MHz
80MHz-100MHz
60MHz
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n 1106 s
Abstract: No abstract text available
Text: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •
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2SK3265
n 1106 s
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2SK3265
Abstract: No abstract text available
Text: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •
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2SK3265
2SK3265
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high
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PHP3N50E
PHX2N60E
OT186A
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Untitled
Abstract: No abstract text available
Text: PART No. 1.14 0.045 -03 3 4 -05 5 -06 6 -07 7 -08 8 -09 9 -10 10 - II II -12 12 -13 13 -14 14 2. FOR PARTS WITH VOIDS SEE SHEET No.2. -15 15 3. PRODUCT SPECIFICATION NUMBER APPLICABLE IS 10-39. -16 16 -17 17 -18 18 < o (5.1) o 0.20 i/i - 1 i— o NOTES :
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SDE-3011--
MG00NEY
10-I3-*
SDE-3011
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LPA-C011301S
Abstract: No abstract text available
Text: surfeeleds MêêM K product family index i Surface Mount 2 x 3m m M o ld e d P ackage S tyle SML-LX23XC-TR .16 SML-LX23XC-TR .17 0402 P ackage S tyle SML-LX0402XC-TR .6 0603 P ackage S tyle SML-LX0603XW-TR SML-LXFM0603XC-TR SML-LXFT0603XC-TR .7
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SML-LX2530XXC-TR
SML-LX2832XC-TR
SML-LX2832XXC-TR
SSL-LX15XC
SSL-LXA1008SC-TR21
SSL-LXA1008XC-TR11
SSL-LXA1008XC-TR41
SSL-LXA228XC-TR11
SSL-LXA228XC-TR21
SSL-LXA228XC-TR31
LPA-C011301S
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ac 187 pin configuration
Abstract: LD 1106 AS
Text: SINGLE PHASE FULL WAVE BRIDGES 70ns-3000ns Recovery • 1-4A - 3.0A ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 2 Working Reverse Voltage Average Rectified Current @TC (to) (Vrwm) Forward Voltage (lr) (Vf) 100°C 25°C 55°C Volts Reverse
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70ns-3000ns
1102F
1106F
1102UF
1106UF
1110UF
1202F
1206F
1202UF
1206UF
ac 187 pin configuration
LD 1106 AS
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Untitled
Abstract: No abstract text available
Text: International fcj« Rectifier " 't ò s s " s s HEXFET Power MOSFET • • • • • • 0D1Sb2ï b7T m PDa621A IRFPG30 i m INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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IRFPG30
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Tip 26C transistor
Abstract: transistor CQ 548 npn CQ 548 Transistor npn motorola MRF427 5 watt resistor arco 469 trimmer capacitor CQ340 TRIMMER capacitor 469 1854 0003 1N4997
Text: 15E MOTOROLA I b3ki7254 M O TO RO LA SC QGà?bM3 □ | XSTRS/R SEM ICO NDUCTOR F T - 33-13 ' MRF427 MRF427A TECHNICAL DATA The RF Line 25 W PE P - 3 0 MHz R F POWER T RAN SISTO R NPN SILICON R F POWER TR AN SISTO R NPN SILICON . . . designed prim arily fo r high-voltage applications as a high-power
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b3ki7254
MRF427
MRF427A
Tip 26C transistor
transistor CQ 548 npn
CQ 548 Transistor npn motorola
5 watt resistor
arco 469 trimmer capacitor
CQ340
TRIMMER capacitor 469
1854 0003
1N4997
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GIJ diode
Abstract: IRFPG30
Text: PD-9.621 A International ê Rectifier IRFPG30 HEXFET® P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ^
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IRFPG30
O-247
T0-220
O-218
lntCIT13tÃ
GIJ diode
IRFPG30
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asea RRME
Abstract: rk 14 1 asea sv RK 271 005 022B 025B RRM17 51T7 RRME rk 03 u 3K136
Text: C a t a lo g u e RK 13-5 E Indlcators type RSP and RRSP T-ypn RRSP Jn p lu g -J n tfB B i-g n March 1970 E d lilo n t f7236<k ASEA ASEA Contents Qaneral Design and mode of operation Versions and mounting Maintenance Technical data and Cat. Nos. Ordering particulars
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RK13-5E
asea RRME
rk 14 1 asea sv
RK 271 005
022B
025B
RRM17
51T7
RRME
rk 03 u
3K136
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header 2X20 pin angle
Abstract: No abstract text available
Text: 10 5 0 CM X A ,_ 0 . IO ) / . 0 0 4 WAFER- (g) Y « Ä + 0.00 . (5 .0 8 - °-* ) .200 ±SS / 57. GLASS FI LL ED POLYESTER TO UL 9 4 V - 0 . COLOUR -• BLACK. -0- 0 ( 0 . 2 5 J / .0 I0 CKT SIZE 2X 1 2X 2 2X 3 2X 4 2X 5 2X 6 2X 7 2X 8 2X 9 2X10 2X1 1 2X12
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53N05
Abstract: STP53N05
Text: • £Z7 7^2^237 GDMbSll T T3 M S f i T H _ S G S -T H O M S O N [ œ ô jO T ô * S STP 53 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP53N05 . . ■ . . . . . V R D S (o n Id < 0.025 Í2 53 A dss 50 V TYPIC A L RDS(on) = 0.022 Q
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STP53N05
7T2T237
004b517
53N05
STP53N05
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MPS-U52
Abstract: MPSU52 MPS-U02 mpsu02
Text: MPS-U52 SILICON PNP silicon annular amplifier transistor designed for general-purpose amplifier and driver applications. Com plement to NPN MPS-U02. MAXIMUM R A T IN G S S T Y L E 1: PIN 1. EM IT T ER 2. BASE 3. C O L LE C T O R Collector connected to tab
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MPS-U52
MPS-U02.
MPS-U52
MPSU52
MPS-U02
mpsu02
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