LCE20 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

LBE2008T

Abstract: LCE2008T LGE2008T
Contextual Info: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

LBE1004R

Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Contextual Info: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

LBE2003S

Abstract: LBE2009S LCE2009S SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;

LBE2003S

Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n

Contextual Info: ObE D N AMER PHILIPS/DISCRETE bbSS^l ODlM^a? S • LBE2005Q LCE2005Q MAINTENANCE TYPE for new design use LBE/LCE2003S J T - S i r 05" MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

IC BL 176A

Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

LBE2003S

Abstract: LBE2009S LCE2009S SC15
Contextual Info: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer

LBE2005Q

Abstract: LCE2005Q J31 transistor
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1^53=131 □DIM'IS? S ■ M A IN T E N A N C E TYPE LBE2005Q LCE2005Q I for new design use LBE/LCE2003S T-32r05" . MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

409 Marking Code

Abstract: Data Handbook sc15
Contextual Info: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal

Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S

Contextual Info: J_L N AMER PHILIPS/DISCRETE MAINTENANCE TYPE OLE D b b 5 3 ^ 3 i o o m c]Ec] i L for new design use LBE/LCE2009S LBE2008T LCE2008T T-ZZ-OS MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

IEC61000-4-4

Abstract: LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A MIL-PRF-19500
Contextual Info: LCE6.5 thru LCE170A, e3 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE CASE 1 WWW . Microsemi .C OM DESCRIPTION This Transient Voltage Suppressor TVS product family includes a rectifier diode element in series and opposite direction to achieve low capacitance

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

LCE20A

Contextual Info: LCE6.5 thru LCE28A Series Low Capacitance TRANSZORB Transient Voltage Suppressor Peak Pulse Power 1500W Stand-off Voltage 6.5 to 28V Case Style 1.5KE Features 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07)

E136766

Abstract: LCE20A
Contextual Info: LCE6.5 thru LCE28A Series Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Stand-off Voltage 6.5 to 28V Features Case Style 1.5KE 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) • Plastic package has Underwriters Laboratory

11X1

Abstract: LCE10 LCE10A LCE11 LCE11A LCE12 LCE12A LCE13 LCE13A LCE170A
Contextual Info: Micro/semi Corp. $ The d io de experts SCOTTSDALE, A l F o r m o r e i n f o r m a ti o n call: 602 941-6300 FEA TU RES This series employs a standard TAZ in series with a rectifier with the same transient capabilities as the TAZ. The rectifier is also used to reduce the effec­

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

24CA/BZ

Abstract: SMBJ11CA BFM 39a IFR 9540 5KE15C 816 6v8a SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA
Contextual Info: TM Micro Commercial Components TRANSIENT VOLTAGE SUPPRESSORS MCC Part Number Uni-Polar Breakdown Voltage VBR @ IT Volt Bi-Polar Min Max Reverse Standoff Voltage Vwm Maximum Reverse Leakage IR @Vwm Maximum Clamping Voltage Vc @ Ipp mA V A V A %/℃ 10.5

Contextual Info: MCC TM Micro Commercial Components LCE6.5A THRU LCE28A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Glass passivated junction Excellent clamping capability Low incremental surge resistance

Contextual Info: MCC TM Micro Commercial Components LCE6.5A THRU LCE28A
   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features l Glass passivated junction l Excellent clamping capability l Low incremental surge resistance

SURGE ARRESTER

Contextual Info: T ra ns i e n t Voltage S u p p r e s s i o n { T V S D i o d e s L CE Series C3Y3QM Control over power 01.016 ±0.050 Invisible Protection MAXIMUM RATINGS When no problems exist, Crydom TVS • Peak pulse power Ppk): 1500 watts Diodes are totally invisible to the circuits

Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 1500 Watt Peak Power ■ Dimension Dim Millimeters Inches Min Max Min Max A 25.4 - 1.000 - B 7.2 9.5 0.285 0.375 C 1.2 1.3 0.048 0.052 D 4.8 5.3 0.188 0.210 DO-201AD ■ Specification

Contextual Info: SEPIITRON INDUSTRIES LTP 43E P WM 013700^ □□□Qllfl 2 « S L C B T - \ 1- ^ 3 S E RI E S Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■1.5KW Peak Pulse Power Low Capacitance ■5W Steady State PEAK POWER DERATING CURVE