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    LCE20 Search Results

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    LCE20 Price and Stock

    Rochester Electronics LLC PALCE20V8H-10JC/4

    EE PLD, 10NS, PAL-TYPE PQCC28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PALCE20V8H-10JC/4 Bulk 44,149 398
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    • 1000 $0.75
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    Rochester Electronics LLC PALCE20V8H-25E4/BLA

    ELECTRICALLY ERASABLE PAL DEVICE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PALCE20V8H-25E4/BLA Bulk 4,556 26
    • 1 -
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    • 100 $11.69
    • 1000 $11.69
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    Rochester Electronics LLC PALCE20V8H-20E4/BLA

    ELECTRICALLY ERASABLE PAL DEVICE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PALCE20V8H-20E4/BLA Bulk 1,986 19
    • 1 -
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    • 100 $16.16
    • 1000 $16.16
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    Rochester Electronics LLC PALCE20V8H-15E4/B3A

    ELECTRICALLY ERASABLE PAL DEVICE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PALCE20V8H-15E4/B3A Bulk 431 7
    • 1 -
    • 10 $46.05
    • 100 $46.05
    • 1000 $46.05
    • 10000 $46.05
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    Rochester Electronics LLC PALCE20V8H-25E4/B3A

    ELECTRICALLY ERASABLE PAL DEVICE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PALCE20V8H-25E4/B3A Bulk 227 15
    • 1 -
    • 10 -
    • 100 $21.07
    • 1000 $21.07
    • 10000 $21.07
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    LCE20 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LCE20 EIC Semiconductor LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    LCE20 General Semiconductor LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    LCE20 Littelfuse TVS - Diodes, Circuit Protection, TVS DIODE 20VWM 34.02VC DO201 Original PDF
    LCE20 MDE Semiconductor 20.00V 1mA 1500W peak pulse power low capacitance transient voltage suppressor. Ideal for data line applications Original PDF
    LCE20 Sussex Semiconductor Transient Suppressor Devices Original PDF
    LCE20 Microsemi Transient Absorption Zener Scan PDF
    LCE2003S Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LCE2005Q Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LCE2008T Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LCE2009S Philips Semiconductors NPN microwave power transistors Original PDF
    LCE2009S Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LCE2009S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LCE2009S Philips Semiconductors NPN microwave power transistors Scan PDF
    LCE2009SA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LCE2009SA Philips Semiconductors Microwave Linear Power Transistors Scan PDF
    LCE20A EIC Semiconductor LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    LCE20A General Semiconductor LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    LCE20A Littelfuse TVS - Diodes, Circuit Protection, TVS DIODE 20VWM 32.4VC DO201 Original PDF
    LCE20A Littelfuse Silicon Avalanche Diodes - 1500W Axial Leaded Transient Voltage Supressors Original PDF
    LCE20A MDE Semiconductor 20.00V 1mA 1500W peak pulse power low capacitance transient voltage suppressor. Ideal for data line applications Original PDF

    LCE20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;


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    PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15

    IEC61000-4-4

    Abstract: LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A MIL-PRF-19500
    Text: LCE6.5 thru LCE170A, e3 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE CASE 1 WWW . Microsemi .C OM DESCRIPTION This Transient Voltage Suppressor TVS product family includes a rectifier diode element in series and opposite direction to achieve low capacitance


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    PDF LCE170A, IEC61000-4-5 RTCA/DO-160D IEC61000-4-2 IEC61000-4-4. IEC61000-4-4 LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A MIL-PRF-19500

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    LCE20A

    Abstract: No abstract text available
    Text: LCE6.5 thru LCE28A Series Low Capacitance TRANSZORB Transient Voltage Suppressor Peak Pulse Power 1500W Stand-off Voltage 6.5 to 28V Case Style 1.5KE Features 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07)


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    PDF LCE28A 265OC/10 LCE20A

    E136766

    Abstract: LCE20A
    Text: LCE6.5 thru LCE28A Series Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Stand-off Voltage 6.5 to 28V Features Case Style 1.5KE 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) • Plastic package has Underwriters Laboratory


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    PDF LCE28A 265OC/10 E136766 LCE20A

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    24CA/BZ

    Abstract: SMBJ11CA BFM 39a IFR 9540 5KE15C 816 6v8a SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA
    Text: TM Micro Commercial Components TRANSIENT VOLTAGE SUPPRESSORS MCC Part Number Uni-Polar Breakdown Voltage VBR @ IT Volt Bi-Polar Min Max Reverse Standoff Voltage Vwm Maximum Reverse Leakage IR @Vwm Maximum Clamping Voltage Vc @ Ipp mA V A V A %/℃ 10.5


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components LCE6.5A THRU LCE28A   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Glass passivated junction Excellent clamping capability Low incremental surge resistance


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    PDF LCE28A 1500Watts DO-201AE

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components LCE6.5A THRU LCE28A    omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features l Glass passivated junction l Excellent clamping capability l Low incremental surge resistance


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    PDF LCE28A 1500Watts DO-201AE DO-201

    Untitled

    Abstract: No abstract text available
    Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 1500 Watt Peak Power ■ Dimension Dim Millimeters Inches Min Max Min Max A 25.4 - 1.000 - B 7.2 9.5 0.285 0.375 C 1.2 1.3 0.048 0.052 D 4.8 5.3 0.188 0.210 DO-201AD ■ Specification


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    PDF DO-201AD LCE120 LCE120A LCE130 LCE130A LCE150 LCE150A LCE160 LCE160A LCE170

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


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    PDF LBE/LCE1004R LBE/LCE1010R E2003S LBE/LCE2009S) E1004R E1010R 1004R 1010R

    LBE2008T

    Abstract: LCE2008T LGE2008T
    Text: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


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    PDF LBE/LCE2009S) LBE2008T LCE2008T LCE2008T LGE2008T

    LBE1004R

    Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
    Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


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    PDF LBE/LCE1004R LBE/LCE2003S LBE/LCE2009S) LBE/LCE1010R LBE1004R LBE1010R LCE1004R LCE1010R IEC134) 1004R amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier Marking LBE

    LBE2003S

    Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n


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    PDF LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA 7110fl2b LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA sfe 5,5 ma 46 MARKING CODE

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


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    PDF LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer


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    PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15

    LBE2005Q

    Abstract: LCE2005Q J31 transistor
    Text: N AMER PHILIPS/DISCRETE ObE D • 1^53=131 □DIM'IS? S ■ M A IN T E N A N C E TYPE LBE2005Q LCE2005Q I for new design use LBE/LCE2003S T-32r05" . MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


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    PDF LBE/LCE2003S) LBE2005Q LCE2005Q LCE2005Q J31 transistor

    409 Marking Code

    Abstract: Data Handbook sc15
    Text: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal


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    PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S OT442A LBE2003S LBE2009S 409 Marking Code Data Handbook sc15

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S


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    PDF btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45

    Untitled

    Abstract: No abstract text available
    Text: J_L N AMER PHILIPS/DISCRETE MAINTENANCE TYPE OLE D b b 5 3 ^ 3 i o o m c]Ec] i L for new design use LBE/LCE2009S LBE2008T LCE2008T T-ZZ-OS MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


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    PDF LBE/LCE2009S) LBE2008T LCE2008T

    htw 323

    Abstract: plji palce programming algorithm
    Text: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25. Q-20/25 MIL: H-15/20/25 LCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Pin, function and fuse-map compatible with all GAL 20V8/AS ■ Electrically erasable CMOS technology pro­


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    PDF H-5/7/10/15/25, Q-10/15/25 H-15/25. Q-20/25 H-15/20/25 PALCE20V8 24-Pin 20V8/AS 24-p8 htw 323 plji palce programming algorithm

    11X1

    Abstract: LCE10 LCE10A LCE11 LCE11A LCE12 LCE12A LCE13 LCE13A LCE170A
    Text: Micro/semi Corp. $ The d io de experts SCOTTSDALE, A l F o r m o r e i n f o r m a ti o n call: 602 941-6300 FEA TU RES This series employs a standard TAZ in series with a rectifier with the same transient capabilities as the TAZ. The rectifier is also used to reduce the effec­


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    PDF LCE170A lce110a lce120 lce120a lce130 lce130a lce150 lce150a lce160 LCE160A 11X1 LCE10 LCE10A LCE11 LCE11A LCE12 LCE12A LCE13 LCE13A

    SURGE ARRESTER

    Abstract: No abstract text available
    Text: T ra ns i e n t Voltage S u p p r e s s i o n { T V S D i o d e s L CE Series C3Y3QM Control over power 01.016 ±0.050 Invisible Protection MAXIMUM RATINGS When no problems exist, Crydom TVS • Peak pulse power Ppk): 1500 watts Diodes are totally invisible to the circuits


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    PDF 1012s SURGE ARRESTER

    Untitled

    Abstract: No abstract text available
    Text: SEPIITRON INDUSTRIES LTP 43E P WM 013700^ □□□Qllfl 2 « S L C B T - \ 1- ^ 3 S E RI E S Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■1.5KW Peak Pulse Power Low Capacitance ■5W Steady State PEAK POWER DERATING CURVE


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    PDF DO-35 DO-41 DO-15 DO-201AD