AS5C2008
Abstract: QML-38534 WS256K8-100CQ WS256K8-120CQ WS256K8-45CQ WS256K8-55CQ WS256K8-70CQ WS256K8-85CQ 55cq WS256K8-70CQA
Text: REVISIO N S LTR D E S C R IP TIO N DATE YR-mo -da APPRO VED D Table I; C hanged the max limit for lcc for device types 06 throu gh 09 98-06 -22 K.A. C ottongim from 150 m A to 180 mA. C hanged the m ax limit for lCCDR for device _ types 06 throu gh 09 from 6.4 m A to 7.0 mA. -
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0EU86
0UE86
AS5C2008
QML-38534
WS256K8-100CQ
WS256K8-120CQ
WS256K8-45CQ
WS256K8-55CQ
WS256K8-70CQ
WS256K8-85CQ
55cq
WS256K8-70CQA
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LT121SS-105
Abstract: DF9-41P LCD INTERFACE DF9-41P-1V LT121SS samsung lcd tv power supply diagrams SIC130 2SK1059 2SK1399 BHR-03VS-1 DF9-41S-1V
Text: Approval TO : DATE : April. 21, 1999 SSAAMMSSUUNNGGTTFFTT- L - LCCDD M MO ODDEELL NNO O. : LT121SS-105 LT121SS-105 NOTE : The information described in this SPEC is preliminary and can be changed without prior notice. APPROVED BY : PREPARED BY : Application Engineering Group
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LT121SS-105
LT121SS-105
DF9-41P LCD INTERFACE
DF9-41P-1V
LT121SS
samsung lcd tv power supply diagrams
SIC130
2SK1059
2SK1399
BHR-03VS-1
DF9-41S-1V
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Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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56531
Abstract: No abstract text available
Text: DG485 Octal Analog Switch Array Features Benefits Applications • • • • • • • Low Signal Distortion • Devices Can Be Chained for System Expansion • Reduced Board Space • Reduced Switch Errors • Reduced Power Supply Requirements • Simple Interfacing
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DG485
DG485
S-56531--Rev.
29-Dec-97
56531
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Untitled
Abstract: No abstract text available
Text: Pr E2G1050-17-X1 el im y 4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1050-17-X1
304-Word
MD56V62400/H
cycles/64
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CY74FCT162244T
Abstract: CY74FCT16244T CY74FCT162H244T CY74FCT16444T
Text: fax id: 7008 CY74FCT16244T/2244T CY74FCT16444T/2H244T 16 Bit Buffers/Line Drivers Features CY74FCT162H244T Features: • Low pow er, p in -c o m p a tib le re p la cem en t fo r A B T fu n ctio n s • FCT-E sp eed at 3.2 ns • Pow er-off d is ab le o u tp u ts p erm its live insertion
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CY74FCT16244T/2244T
CY74FCT16444T/2H244T
25-mil
of-40Â
CY74FCT16244T
CY74FCT162244T
CY74FCT16444T
CY74FCT162H244T
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2ylo
Abstract: CY74FCT163827 CY74FCT163827A CY74FCT163827C CY74FCT163LD244 CY74FCT163LD827
Text: fax id: 7054 CY74FCT163827 CY74FCT163LD827 20-Bit Buffer Features • Low power, pin-compatible replacem ent for LCX, LPT, LVC, LVCH & LVT families • 5V tolerant inputs and outputs* • 24 mA & 6 mA balanced drive outputs • Power-off disable outputs permits live insertion
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of-40Â
25-mil
CY74FCT163LD244
CY74FCT163827
CY74FCT163LD827
20-Bit
2ylo
CY74FCT163827A
CY74FCT163827C
CY74FCT163LD244
CY74FCT163LD827
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t245A
Abstract: No abstract text available
Text: FAST CM OS NON-INVERTING BUFFER TRANSCEIVER IDT54/74FCT245 IDT54/74FCT245A FEATURES: DESCRIPTION: • T h e ID T54/74FC T245 and ID T54/74FC T245A are 8-bit non inverting, b id ire c tio n a l buffers b u ilt u sing a dva n ce d CEMOS , a dual m etal C M O S te c h n o lo g y . These b id ire c tio n a l buffers have
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IDT54/74FCT245
IDT54/74FCT245A
T54/74FC
T245A
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: w W 16-BIT CM O S ERROR DETECTION AND CO RRECTIO N UNIT IDT39C60A IDT ^ C6/2“ 1 IDT39C60 Inte3 rated Device Technology. Inc. MICROSLICE PRODUCT FEATURES: DESCRIPTION: • The IDT39C60 fam ily are high-speed, low-power, 16-bit Error De tection and Correction Units which generate check bits on a 16-bit
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16-BIT
IDT39C60A
IDT39C60
IDT39C60
16-bit
IDT39C60S
32-blt
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: FAST CMOS OCTAL LATCHED TRANSCEIVER Integrated Device Technology« Inc. IDT54/74FCT543 IDT54/74FCT543A IDT54/74FCT543C FEATURES: DESCRIPTION: • • • • The IDT54/74FCT543/A/C is a non-inverting octal trans ceiver built using advanced CEMOS , a dual metal CMOS
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IDT54/74FCT543
IDT54/74FCT543A
IDT54/74FCT543C
IDT54/74FCT543/A/C
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Untitled
Abstract: No abstract text available
Text: T S ] H ig h - S p e e d 3 .3 V 1 6 - B it B u ffe r /L in e W ith ^ c o n d u c to r,In c . C M O S Q S74LC X2XH 244 D r iv e r B U S H o ld FEATURES/BENEFITS DESCRIPTION • 16-bit function compatible to QS74LCXH244 • 5V tolerant inputs and outputs • Bus Hold feature holds last active state during
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S74LC
16-bit
QS74LCXH244
006in.
003in.
DDD3753
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms
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MC008FLSG,
MC016FLSG,
MC024FLSG
MC032FLSG,
MC048FLSG,
MC064FLSG
AP-374
AP-644
AP-646
AP-647
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Untitled
Abstract: No abstract text available
Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology.
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HM62V8512B
512-kword
ADE-203-905C
525-mil
400-mil
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CY74FCT273ATQC
Abstract: CY74FCT273ATSOC FCT273T
Text: fax id: 7025 ; •- L> I 1 i l ì L O O JS / ^ i\ rszgggfpr CY54/74FCT273T rT~lT~l T *o O 8-Bit Register Features Functional Description • Function, pinout, and drive com patible with FCT and F logic • FCT-C speed at 5.8 ns max. Com ’I FCT-A speed at 7.2 ns max. (Com ’I)
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Y54/74FCT273T
FCT273T
CY74FCT273ATQC
CY74FCT273ATSOC
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IHb si
Abstract: No abstract text available
Text: fax id: 7060 CYPRESS PRELIMINARY CY74UBL5911 Universal Bus Logic Products & Features • U niversal Bus Logic™ replaces o ver 100 d iffe ren t part num bers w ith o ne device • Typ ical VOLP g ro un d b o u n ce < 1 ,0V at V Cq = 5V, T a = 25 °C
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CY74UBL5911
IHb si
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active suspension
Abstract: MD56V62800A
Text: Pr E2G1054-18-62 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1054-18-62
152-Word
MD56V62800A
cycles/64
active suspension
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SPWM IC
Abstract: BSM79108 SM79108 SM79108C40 SM79108L25 top2007 chip lcd driver
Text: SyncMOS Technologies International, Inc. SM79108 8-Bits Micro-controller With 8KB flash & 256B RAM embedded Features Product List SM79108L25, 25MHz 8KB internal flash MCU SM79108C40, 40MHz 8KB internal flash MCU Description The SM79108 series product is an 8 - bit single chip
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SM79108
SM79108L25,
25MHz
SM79108C40,
40MHz
SM79108
5000U/X8
VP-890
VP-980
VP-880
SPWM IC
BSM79108
SM79108C40
SM79108L25
top2007
chip lcd driver
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MD56V62160
Abstract: No abstract text available
Text: Pr E2G1052-17-X1 el im y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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E2G1052-17-X1
576-Word
16-Bit
MD56V62160/H
cycles/64
MD56V62160
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IDT74ALVCH162601
Abstract: IDT74ALVCH16601 SO56-2
Text: IDT74ALVCH16601 3.3V CMOS IDT74ALVCH162601 18-BIT UNIVERSAL BUS ADVANCE INFORMATION TRANSCEIVER WITH 3-STATE OUTPUTS Integrated Device Technology, Inc. FEATURES: data flow in transparent, latched and clocked modes. Data flow in each direction is controlled by output-enable
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IDT74ALVCH16601
IDT74ALVCH162601
18-BIT
IDT74ALVCH16601,
O56-3)
IDT74ALVCH162601
IDT74ALVCH16601
SO56-2
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6BH7
Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Text: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8
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\58GJ88A
6BAG46GF]
w84IL
rBAG46G
FG4A68
rBAG46G
6BH7
DCWM
PR78A
91AB
A13A
74g4f
diac 8 v
6b p 94
8a7l
6bfp
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H R C M F 2J
Abstract: diak LM 464 diode B13B e49 3c 85 E24ED
Text: :5/ AC2<9=91BC@5 9=B5@<5491B5 ?>E5@ @5;1F 6JGUVSJT V v:89 DH:E49:?8 42A24:EJ dom dco ehc.oqbko fc.rqn eo_ do ^ dpm ko ehc.oqbfc.rq V v:89 D6?D:E:G:EJm ecc>/ V g<. 5:6=64EC:4 DEC6?8E9 \36EH66? 4@:= [ 4@?E24ED] V +:?8=6 D:56 DE23=6 2?5 =2E49:?8 EJA6D 2G2:=23=6
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5491B5
42A24
\36EH66?
E24ED]
2E65m
52E2D966E
C676C6
E96C6
56E6C>
H R C M F 2J
diak
LM 464 diode
B13B
e49 3c 85
E24ED
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PDF
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HC08
Abstract: HCS08 MC9S08LC36 MC9S08LC60 freescale superflash
Text: MC9S08LC60 MC9S08LC36 Data Sheet: Advance Information This document contains information on a new product under development. Freescale reserves the right to change or discontinue this product without notice. HCS08 Microcontrollers MC9S08LC60 Rev. 2 02/2007
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MC9S08LC60
MC9S08LC36
HCS08
MC9S08LC60
HCS08
40-MHz
HC08
MC9S08LC36
freescale superflash
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Untitled
Abstract: No abstract text available
Text: a P re lim in a ry Am29C985 9-Bit x 4-Port Multiple Bus Exchange with Parity Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Four bidirectional I/O ports - Replaces several bidirectional latched transceivers - Permits multiple bus communication - Allows two independent communication channels
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Am29C985
1996-014A
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MB86860
Abstract: 0x80000410 bit3113 SCSN1 sparclite hypersparc BIT3115 S200 SS200 SAD-100
Text: MB86860 SPARClite SPARClite MB86860 Series Data Sheet Rev.1.2 July 27, 1999 Fujitsu This material is preliminary and is subject to change without notice. SPARC is a registered trademark of SPARC International, Inc. in the United States and is based on technology developed by Sun
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MB86860
32-bit
600us
0x80000410
bit3113
SCSN1
sparclite
hypersparc
BIT3115
S200
SS200
SAD-100
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