TC17xx
Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
Text: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,
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M58BW
M58BW016
M58BW032
FLNORAUT0405
TC17xx
PQFP80
TC17X
M58BW016
M58BW016D
M58BW032
MPC5554
FLNORAUT0405
NOR FLASH
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M58BF008
Abstract: PQFP80 1A000-1BFFF 7N80
Text: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 5V for Program, Erase and Read – VDDQ = 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ CONFIGURABLE OPTIONS
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M58BF008
256Kb
LBGA80
PQFP80
40MHz
M58BF008
PQFP80
1A000-1BFFF
7N80
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MTC20166
Abstract: ST70138T mtc-20174 MTK20170 MTC20174-TQ-C1 TR-048 MTC20174 ST20138 ST70137 ST70138
Text: ST20138 Unicorn II PCI/USB ADSL CHIPSET: ST70138 + MTC20174 FOR ULTRA LOW COST ADSL MODEM DATA BRIEF 1 DESCRIPTION The Unicorn II chipset is designed to simplify the development of low-cost ADSL CPE modems for Windows, Mac and Linux based environments and
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ST20138
ST70138
MTC20174
MTC20166
ST70138T
mtc-20174
MTK20170
MTC20174-TQ-C1
TR-048
MTC20174
ST20138
ST70137
ST70138
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M58BW016xB
Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016xB
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
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la 7913
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
la 7913
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
00005H
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Q002
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
Q002
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
13-May-2003
tbhk
M58BW016DB7
8835h
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M58BF008
Abstract: PQFP80
Text: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 5V for Program, Erase and Read – VDDQ = 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ CONFIGURABLE OPTIONS
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M58BF008
256Kb
LBGA80
PQFP80
40MHz
M58BF008
PQFP80
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M58BW016BB
Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
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M58BW32FB
Abstract: Q002 PQFP80 M58BW16F M58BW16FT M58BW32F M58BW32FT
Text: M58BW16F M58BW32F 16 or 32 Mbit x32, Boot Block, Burst 3.3V supply Flash memories Preliminary Data Features summary • Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance
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M58BW16F
M58BW32F
75MHz
PQFP80
M58BW32F
M58BW16F
M58BW32FB
Q002
PQFP80
M58BW16FT
M58BW32FT
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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Untitled
Abstract: No abstract text available
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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M58BW016
Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
PQFP80
M58BW016
Q002
M58BW016DT
M58BW016FB
PQFP80
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F8800h-F8FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers High performance – Access times: 45 and 55 ns
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M58BW16F
M58BW32F
M58BW32F
F8800h-F8FFFh
M58BW32FB
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
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M58BW32FB
Abstract: M58BW32F Q002 M58BW16FB M58BW16F M58BW16FT M58BW32FT PQFP80
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
PQFP80
M58BW32F
M58BW16F
M58BW32FB
Q002
M58BW16FB
M58BW16FT
M58BW32FT
PQFP80
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M58BF008
Abstract: PQFP80
Text: M58BF008 8 Mbit 256Kb x32, Burst Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage – Optional VPP = 12V for fast Program and Erase ■ CONFIGURABLE OPTIONS BGA – Synchronous or Asynchronous write mode
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M58BF008
256Kb
LBGA80
PQFP80
40MHz
100ns
M58BF008
PQFP80
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M58BW016BB
Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
m58bw016xb
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LBGA80
Abstract: No abstract text available
Text: M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 32 Mbit 1Mb x32, Boot Block, Burst 3.3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O
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M58BW032BT,
M58BW032BB
M58BW032DT,
M58BW032DB
75MHz
128Kbit
512Kbit
PQFP80
LBGA80
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F9800h-F9FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
F9800h-F9FFFh
M58BW32FB
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MTC20174
Abstract: ST70137 chipset ST70138 ST70138B ST70138T TQ144 TQFP144 0-16KB LBGA80
Text: Unicorn II PCI/USB ADSL chipset A solution for ultra low-cost ADSL modems www.st.com/communication Unicorn II - A natural revolution lower E-BOM costs, reduced component count and lower PCB complexity, increasing overall performance. Its proven controller less and SDRAM-less architecture is highly
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ST70138
MTC20174
FLUNICORN/0904
MTC20174
ST70137
chipset
ST70138
ST70138B
ST70138T
TQ144
TQFP144
0-16KB
LBGA80
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M58BW016
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
M58BW016
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M58BW016DB
Abstract: M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
M58BW016DB
M58BW016xB
M58BW016BB
M58BW016BT
M58BW016DT
PQFP80
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