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    M36W108AB

    Abstract: M36W108AT
    Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108AT M36W108AB 128Kb 100ns LBGA48 LGA48 M36W108AB M36W108AT

    LGA48

    Abstract: M36W108AB M36W108AT
    Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product DATA BRIEFING • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108AT M36W108AB 128Kb 100ns LBGA48 LGA48 LBGA48: 10x12x1 LGA48: LGA48 M36W108AB M36W108AT

    LGAZ0

    Abstract: M36W108AB M36W108AT
    Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108AT M36W108AB 128Kb 100ns LBGA48 LGA48 LGAZ0 M36W108AB M36W108AT

    AI02511

    Abstract: M36W108 M36W108B M36W108T
    Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108T M36W108B 128Kb 100ns LBGA48 LGA48 AI02511 M36W108 M36W108B M36W108T

    EEPROM 16MB

    Abstract: house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004
    Text: Standard and Advanced Architecture Flash DISCOVER ST NOW Flash memories are the most dynamic new driving force in nonvolatile memories. The flexibility they provide for in-system reprogramming and their low cost meet the needs as an enabling technology for many new applications. Nomadic applications, such


    Original     		PDF FLSTD/1198 286-CJ103 EEPROM 16MB house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004

    SST25VF128

    Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
    Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash


    Original     		PDF

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    M36W108

    Abstract: M36W108B M36W108T
    Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108T M36W108B 128Kb 100ns LBGA48 LGA48 M36W108 M36W108B M36W108T

    LGA48

    Abstract: M36W108AB M36W108AT F0000H
    Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    Original     		PDF M36W108AT M36W108AB 128Kb 100ns LBGA48 LGA48 LGA48 M36W108AB M36W108AT F0000H

    TAG 9109

    Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
    Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in


    Original     		PDF 286-CJ103 TAG 9109 M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle

    LGAZ0

    Abstract: M36W108AB M36W108AT M36W108B M36W108T
    Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB ■ SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,


    Original     		PDF M36W108T M36W108B 128Kb M36W108T M36W108B M36W108AT M36W108AB 100ns LBGA48 LGA48 LGAZ0 M36W108AB

    M36W108B

    Abstract: M36W108T M36W108AB M36W108AT LGA48
    Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • ■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,


    Original     		PDF M36W108T M36W108B 128Kb M36W108T M36W108B M36W108AT M36W108AB 100ns LBGA48 LGA48 M36W108AB LGA48

    10A19

    Abstract: No abstract text available
    Text: M36W108AT M36W108AB 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M36W108AT M36W108AB 128Kb 100ns M36W108AT, LGA48 LGA-Z02 10A19

    Untitled

    Abstract: No abstract text available
    Text: M 36W 108T M 36W 108B 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF 128Kb 100ns LGA48 LGA48