Untitled
Abstract: No abstract text available
Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V
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SSP5N80A
iti4142
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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Untitled
Abstract: No abstract text available
Text: KM48V514DT CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48V514DT
512Kx8
KM48V514DT)
00357bl
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Untitled
Abstract: No abstract text available
Text: IRLM210A Advanced Power MOSFET FEATURES b v dss = 200 V • Avalanche Rugged Technology 1.5 Î2 ■ Rugged Gate Oxide Technology ^DS on — ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area SO T-223 ■ Lower Leakage Current : 10 |iA (M ax.) @ VDS = 200V
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IRLM210A
T-223
0D311Ã
003b323
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Untitled
Abstract: No abstract text available
Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C
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2N6520
D0250SG
lb414E
002SDS1
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Untitled
Abstract: No abstract text available
Text: IRLS520A Advanced Power MOSFET FEATURES • Logic Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 100V
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IRLS520A
lb414E
7TL4142
GG3T24B
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