LB207
Abstract: LB101 International Power Sources lb101 LB203 LB208 lb102 LB205 LB201 International Power Sources LB-203
Text: INTL POWER SOURCES INC b3E D • >4053375 0000230 T5S m INP DC/DC Converters International Power Sources, Inc. LB Series: 25/30 Watt Wide Input Range 200 Butterfield Drive Ashland, Massachusetts 01721 Tel. 508 881-7434 Fax (508) 879-8669 FEATURES • •
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LB101
LB102
LB103
LB104
LB105ING
LB207
International Power Sources lb101
LB203
LB208
LB205
LB201
International Power Sources
LB-203
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LB208
Abstract: LB207 LB108 LB101 LB205 LB204 International Power Sources lb101 LB307 Lb206 LB105
Text: I NT L P O W E R S O U R C E S INC b3 E D • 4 0 5 3 3 7 5 0 0 0 0 2 3 0 T5S ■ INP DC/DC Converters ■ International Power Sources, Inc. '" S '. / 200 Butterfield Drive Ashland, Massachusetts 01721 Tel. 508 881-7434 Fax (508) 879-8669 LB Series: 25/30 Watt
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LB101
LB105
LB107
LB108
LB201
LB202
LB203
LB204
LB205
LB206
LB208
LB207
International Power Sources lb101
LB307
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Untitled
Abstract: No abstract text available
Text: HN62318B Series HN62328B Series 8M 1M x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62318B/HN62328B Series is an 8-M egabit CMOS Mask Program mable Read Only Memory organized as 1,048,576 x 8-bit. The low power consumption of this device makes it ideal tor
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HN62318B
HN62328B
HN62318B/HN62328B
32-pin
32-lead
ns/200
HN62328B)
lb203
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HM6708AJP
Abstract: A14AAC HM6708A-20
Text: TA CH I/ L 0 6 IC/ARRAVS/MEFI 5 1 E II H M I b S D B 0 0 1 7 ^ 3 RÔ T • H I T S - - Preliminary HM6708A Series-65536-Word x 4-Bit High Speed Static RAM ■ FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output
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HM6708A
65536-Word
65536-words
450mW
X1024
A10A11A12
DP-24NC)
HM6708AP-15
HM6708AP-20
HM6708AP-25
HM6708AJP
A14AAC
HM6708A-20
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / LOGIC/ARRAYS/HEM SIE ]> • 44Tb2ü3 0D1774M 42^ ■ H I T 2 HN62438N Series- Preliminary 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62438N Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x
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44Tb2Ã
0D1774M
HN62438N
16-bit)
16-bit
32-bit
42-pin
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hitachi sr 302
Abstract: No abstract text available
Text: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x
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HM514100JP/ZP-7--------------------
304-Word
HM51440QJP
HM514100
20-pin
CP-20DA)
hitachi sr 302
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Untitled
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and
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HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635C
576-word
16-bit.
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LB203 DC
Abstract: No abstract text available
Text: SIE D • MM1bEÜ3 0018701 TEO ■ HIT2 HM514410 Serie HITACHI/ logic/ arrays/ mem _ Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION H M 514410JP Series The Hitachi HM514410 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514410 has realized higher density, higher performance and various func
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HM514410
576-Word
514410JP
20-pin
514410Z
LB203 DC
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Untitled
Abstract: No abstract text available
Text: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669A Z Rev. 1.0 May. 20,1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58S256AI
32768-word
ADE-203-669A
64-byte
ns/200
lb203
HN58S256ATI
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Untitled
Abstract: No abstract text available
Text: HI T A C H I / LOGIC/ARRAVS/riEM a*JE J> 4*Hba03 0Qlt.b57 1 HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES • • HM65256BP Series Single 5V ±10% High Speed Access Time CE Access T i m e . 100/120/150/200ns
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Hba03
HM65256B
32768-word
HM65256BP
100/120/150/200ns
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HB56A19B
Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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HB56A19
576-Word
HM511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
zp 1401
HB56A19B10A
SIMM 30-pin
HB56A19A-12
HB56A19A-12A
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LB203 DC
Abstract: No abstract text available
Text: HITACHI/ LOCIC/ARRAYS/MEM SI E D MM1b5G3 00n315 flfl^ • H I T S HM534251 Series-262,144 x 4-Bit Multiport CMOS Video Random Access Memory ■ DESCRIPTION HM534251JP Series The HM534251 is a 1-Mbit multiport video RAM equipped with a 256k-word x
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00n315
HM534251
Series--------------------262
HM534251JP
256k-word
512-word
787l0
LB203 DC
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Untitled
Abstract: No abstract text available
Text: HB56C18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56C1B is a 1M x 8 static column mode dynamic RAM module, mounted eight 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the
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HB56C18
576-Word
HB56C1B
HM511002JP)
30-pin
HB56C18A,
HB56C18AT)
HB56C18B)
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HB56A18B-8A
Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Text: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single
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HB56A18
576-Word
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
HB56A18B-8A
SIMM 30-pin
HB56A18B
HB56A18AT-6H
"30 pin simm"
30-pin SIMM RAM
30 pin SIMM socket
HB56A18B8A
zp 1401
we221
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Untitled
Abstract: No abstract text available
Text: HB56U232BA/SBA Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-721B Z Rev. 2.0 May. 26,1997 Description The HB56U232BA/SBA is a 2M x 32 dynamic RAM module, mounted 4 pieces o f 16-Mbit DRAM (HM5117805) sealed in SOJ package. The HB56U232BA/SBA offers Extended Data Out (EDO) Page
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HB56U232BA/SBA
152-word
32-bit
ADE-203-721B
16-Mbit
HM5117805)
72-pin
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Untitled
Abstract: No abstract text available
Text: HM62V8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-657B Z Rev. 2.0 Jan. 16, 1997 Description The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (im Hi-CMOS shrink process
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HM62V8128B
072-word
ADE-203-657B
525-mil
460-mil
0341cll
HM62V8128BLT
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LA603V
Abstract: LM035L LB-402D LB-402DA LR-40M LA-603VP SLR-54-MG 020MVT LB-402VK LD404V
Text: t- - i i s — Y / Light Emitting Diodes • + -7 x ^ V ^ > t.M L E D SM L-010 y 'J - X * 3 tfe a±m m f S M L-020 ->'J - X * 3 tttÜ 4 SM L-010JT S » Ä *6 (660nm ) Ä ife iS W * fe (650nm ) Ü fe S iŒ fe - SM L-010U T — G aAsP on GaP SM L-010D T
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L-010
L-020
L-010JT
L-010LT
660nm
650nm
L-010VT
635nm
L-010U
610nm
LA603V
LM035L
LB-402D
LB-402DA
LR-40M
LA-603VP
SLR-54-MG
020MVT
LB-402VK
LD404V
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Untitled
Abstract: No abstract text available
Text: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and
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HM514102B/BL
304-word
514102B
20-pin
20-pin
HM514102BS/BLS-7
HM514102BS/BLS-8
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Untitled
Abstract: No abstract text available
Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM HITACHI Preliminary Rev. 0.0 Nov. 20,1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM® memory products from Hitachi combine the read/write characteristics of semiconductor RAM with
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HM71V832
32768-word
32k-word
HM71V832-15
44Tb203
HM71V832FP
FP-28DA)
HM71V832T
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A03404
Abstract: No abstract text available
Text: HM67S18258 Series 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661A Z Product Preview Rev. 1 Feb. 21 ,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
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HM67S18258
144-words
18-bits
ADE-203-661A
M67S18258BP-7
BP-119)
67S18256BP
A03404
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HM514260DJI-7
Abstract: HM514260DJI-8 HM514260DLJI-7 HM514260DLJI-8 SC-640 Hitachi Scans-001
Text: HM514260DI Serie 262,144-word x 16-bit Dynamic RAM HITACHI ADE-203-710A Z Rev. 1.0 Feb.13, 1997 Description The Hitachi HM514260DI is a CMOS dynamic RAM organized as 262,144 words x 16 bits. The HM514260DI realizes higher density, higher performance, and various functions by employing 0.8 (am
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HM514260DI
144-word
16-bit
ADE-203-710A
400-mil
40-pin
ns/80
HM514260DJI-7
HM514260DJI-8
HM514260DLJI-7
HM514260DLJI-8
SC-640
Hitachi Scans-001
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HM514402B/BL
Abstract: HM514402
Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v ario u s fu n c tio n s by
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HM514402B/BL
576-word
514402B/BL
514402B
20pin
20-pin
HM514402BS/BLS-7
HM514402BS/BLS-8
300-mil
HM514402
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6x6 led matrix
Abstract: 16x16 led matrix green red MU302 6780 segment SLA5600 MLT 22 706 rohm sml 010 LD003 SML-010
Text: Introduction Introduction The LEDs offered by Rohm in this data book are a group of solid state optoelectronic devices for use in third party products. LEDs have become part of the requirements in new equipment that is increasingly all solid-state and which is being consolidated using large scale integrated
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Untitled
Abstract: No abstract text available
Text: HM5118160I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-756A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM 51181601 Series are CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160I
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HM5118160I
1048576-word
16-bit
ADE-203-756A
576-word
16-bit.
HM5118160I
42-pin
ns/70
mW/825
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