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    LB 127 TRANSISTOR Search Results

    LB 127 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    LB 127 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: i., L/na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC184 BC184B BC184C TO-92 Plastic Package Amplifier Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25°C unless specified otherwise)


    Original     		PDF BC184 BC184B BC184C 200Hz

    transistor m4a

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage: TIP125 : TIP126 : TIP127 Collector-Emitter Voltage


    OCR Scan     		PDF TIP125 TIP126 TIP127 300pis, transistor m4a

    TIP177

    Abstract: LB 122 transistor TIP 126 tip127
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage


    OCR Scan     		PDF TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126

    LB 122 transistor

    Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120


    OCR Scan     		PDF TIP125/126/127 TIP120/121/122 TIP125 TIP126 TIP127 120Si LB 122 transistor LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR

    LB 122 transistor

    Abstract: No abstract text available
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127


    OCR Scan     		PDF TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor

    tip127 darlington

    Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
    Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan     		PDF TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP120, TIP125 TIP121, TIP126 tip127 darlington TIP127 tip122 tip127

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to T IP I 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Symbol Rating Unit V CBO -6 0 -8 0 - 100 V V V VcEO -6 0 -8 0 - 100 V V V V A


    OCR Scan     		PDF TIP125 TIP126 TIP127 TIP125/126/127

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


    OCR Scan     		PDF TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122

    LB 122 transistor

    Abstract: TRANSISTOR tip 126
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP I 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-B ase Voltage: TIP125 : TIP126 : TIP127 C o lle cto r-E m itte r Voltage


    OCR Scan     		PDF TIP120/121/122 TIP125 TIP126 TIP127 LB 122 transistor TRANSISTOR tip 126

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • m t- 2N2907A GENERAL PURPOSE PNP TRANSISTOR 61095 OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Oia. 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed


    OCR Scan     		PDF 2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz 150mA, lc-150mA, 300ns,

    Untitled

    Abstract: No abstract text available
    Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HP122 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Package: TO-220 * Complement to TIP 127 ABSOLUTE MAXIMUM RATINGS at T«ml^25°C C haracteiistk Symbol Rating Uitit


    OCR Scan     		PDF HP122 O-220 300uSJDuty 100mA

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120


    OCR Scan     		PDF TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed


    OCR Scan     		PDF 2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz lc-150mA, 300ns,

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
    Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag


    OCR Scan     		PDF TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120


    OCR Scan     		PDF TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR

    transistor 2n2369

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 15 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High-speed switching • VHF amplification.


    OCR Scan     		PDF 2N2369 transistor 2n2369

    LB 124 transistor

    Abstract: transistor 45 f 123 BU2506DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


    OCR Scan     		PDF BU2506DF LB 124 transistor transistor 45 f 123 BU2506DF

    transistor K 3565

    Abstract: JD127 transistor 45 f 122 2N6040-2N6045 MOTOROLA MJD122 jd122
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* Com plem entary Darlington Power Transistors PNP M JD 127* DPAK For Surface Mount Applications *Motoro<a Pr«ftffd Device Designed for general purpose amplifier and low speed switching applications. SILICON


    OCR Scan     		PDF 2N6040-2N6045 TIP120-TIP122 TIP125-- TIP127 MJD122 MJD127 transistor K 3565 JD127 transistor 45 f 122 MOTOROLA MJD122 jd122

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bTE D bb53^31 0036351 354 H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		PDF BU2508D

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS IS S U E 1 - N O V E M B E R 19 ï C iŒ I I Bi Ci CH I I Et CzLJZ I I C2 Œ I I E2 b2 PA R T M A R K IN G DETAIL - T749 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge C olle ctor-Em itter V o lta ge


    OCR Scan     		PDF 300ns. ZDT749

    Untitled

    Abstract: No abstract text available
    Text: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Built in a Damper Diode at E-C •Darlington T R • Complement to KSD1222 ABSOLUTE MAXIMUM RATINGS Rating Unit


    OCR Scan     		PDF KSB907 KSD1222

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706AX

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


    OCR Scan     		PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    ic Lb 598 d

    Abstract: GS121 ic Lb 598 sgs120
    Text: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic


    OCR Scan     		PDF SGS122 S6S127 SGS120, SGS121 OT-82 SGS125, 300fis, DD174M7 SGSt20 SGSI25 ic Lb 598 d GS121 ic Lb 598 sgs120