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    LATERAL MOS Search Results

    LATERAL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    LATERAL MOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A052109 PDF

    mosfet 6 ghz

    Abstract: 2.4 ghz mosfet mosfet ghz
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF183 Advance Information The RF MOSFET Line M otorola Preferred Device RF Power Field Effect Transistors 45 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs


    OCR Scan     		MRF183 MRF183 mosfet 6 ghz 2.4 ghz mosfet mosfet ghz PDF

    capacitor 2200 micro M

    Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
    Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs


    Original     		MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking PDF

    mark G1 SOT-23

    Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		LP1030D LP1030D DSFP-LP1030D NR101512 mark G1 SOT-23 sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		MRF185 31JUL04 31JAN05 PDF

    mosfet n3

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A012409 mosfet n3 PDF

    A1761

    Abstract: a1776 A1733
    Text: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device 45 WATTS, 1.0 GHz, 28 VOLTS LATERAL N–CHANNEL


    Original     		MRF183/D MRF183 MRF183S MRF183/D* A1761 a1776 A1733 PDF

    125OC

    Abstract: LP0701
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A052109 125OC LP0701 PDF

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: L21e
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		LP1030D LP1030D DSFP-LP1030D NR011613 SOT-23 MOSFET P-CHANNEL a1 1- mark L21e PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		MRF185 MRF185 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A030509 PDF

    80 watt hf mosfet

    Abstract: MRF185
    Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET


    Original     		MRF185/D MRF185 80 watt hf mosfet MRF185 PDF

    J133 mosfet transistor

    Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL


    Original     		MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935 PDF

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		MRF185 MRF185 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power MRF182 Field Effect Transistors MRF182S, R1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs


    Original     		MRF182 MRF182S, MRF182S MRF182SR1 MRF182) MRF182S) 31JAN05 PDF

    LP0701LG-G

    Abstract: 125OC LP0701 JEDEC drawing
    Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A052109 LP0701LG-G 125OC LP0701 JEDEC drawing PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


    Original     		LP0701 DSFP-LP0701 A091708 PDF

    mosfet ghz

    Abstract: mrf182
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device


    OCR Scan     		MRF182 MRF182 mosfet ghz PDF

    adc 8951

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 85 W, 1.0 GHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–04, STYLE 1 MRF187 CASE 465A–04, STYLE 1 (MRF187S) MAXIMUM RATINGS


    Original     		MRF187 MRF187S 31JUL04 31JAN05 adc 8951 PDF

    Untitled

    Abstract: No abstract text available
    Text: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating


    OCR Scan     		SD2100 PDF

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		MRF185/D MRF185 DEVICEMRF185/D PDF

    MRF373 PUSH PULL

    Abstract: C25AB rf push pull mosfet power amplifier push pull motorola Nippon capacitors
    Text: M OTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF373* MRF373S VtF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs *MRF373 to be introduced 4Q98. 60 W, 470 - 860 MHz LATERAL N-CHANNEL BROADBAND


    OCR Scan     		MRF373/D MRF373 PUSH PULL C25AB rf push pull mosfet power amplifier push pull motorola Nippon capacitors PDF