808nm 1W laser diode
Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Text: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical
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O-220
D-93049
de/Semiconductor/products/37/376
B143-H7010-G1-X-7600
TS12975.
808nm 1W laser diode
980nm led
laser diode 905nm
led 940nm high power 1W
laser diodes 808nm 1w
905nm Plastic Pulsed Laser Diode
780nm laser diode module
SPL/780nm laser diode module
CG94
TO220 Semiconductor Packaging
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MNxx
Abstract: AMP 925 276 din 74 SPLLL90 P5243 SPL PL90_3 spl pl90 0 CG94 laser diode 780 nm PL90_3
Text: LEISTUNGSLASER HIGH POWER LASERS LEISTUNGSLASER HIGH-POWER LASERS SAFETY INSTRUCTIONS Products incorporating laser diodes will normally be classified as class 4 laser products according to IEC 60825-1 in a normal operation mode. Direct exposure of the human eye with laser radiation is therefore hazardous and must be strictly avoided.
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DIN912
GWOY6035
MNxx
AMP 925 276
din 74
SPLLL90
P5243
SPL PL90_3
spl pl90 0
CG94
laser diode 780 nm
PL90_3
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Untitled
Abstract: No abstract text available
Text: CLI – CableLine Laser-printed Identification Cable markers and wire markers Product information CLI – CableLine® Laser-printed Identification Introduction Materials Weidmüller tests and test procedures Selection table CableLine® packaging types 4
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5657500000/01/2007/DMMD
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Untitled
Abstract: No abstract text available
Text: Ultrafast Laser Systems 2014 Product Catalog Superior Reliability & Performance Ultrafast Laser Systems Introduction Applications: • Pump and Probe Studies • Time-domain Spectroscopy • Surface Sum Frequency Generation • EUV and X-ray Generation • Attosecond Pulse Generation
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ULM850-L2-PL-S0101U
Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
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850nm
850nm-long-life-sm-vcsel
ULM850-L2-PL-S0101U
ULM850-PM-TN-S46FZP
ULM850-VP-PL-S46XOP
894nm
ULM850-PM-TN-S46XZP
SM 850nm laser vcsel ulm
tdlas
vcsel SMD
MAP 3959
ulm vcsel reference
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LASER based Four ZONE security system
Abstract: Sharp Semiconductor Lasers highpower laser siemens SFH nm silicon carbide LED silicon carbide micromechanical
Text: APPLICATIONS OPTOELECTRONICS Georg Bogner ● Stefan Grötsch ● Markus Wicke Higher outputs, easier assembly: What’s new in high-power laser diodes? High-power laser diodes are used principally as pump light sources for neodymium YAG lasers and for direct
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LASER based Four ZONE security system
Sharp Semiconductor Lasers
highpower laser
siemens SFH nm
silicon carbide LED
silicon carbide
micromechanical
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2 Wavelength Laser Diode
Abstract: spl pl90 0 laser diode driver for free space communication PULSED LASER DIODE DRIVER pulsed laser diode GaAs 905 2Y98 2Y85 laser driver free space communication Laser-Diode 808 1550 laser diode
Text: OSRAM OPTO SEMICONDUCTORS H IGH POWER LASER DIODES OSRAM I N FOCUS: OSRAM OPTO SEMICONDUCTORS HIGH POWER LASER DIODES Useage of high power semiconductor lasers is growing rapidly in the industrial and automotive markets, primarily for pumping solidstate lasers Nd:YAG at
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D-93049
10010E
2 Wavelength Laser Diode
spl pl90 0
laser diode driver for free space communication
PULSED LASER DIODE DRIVER
pulsed laser diode GaAs 905
2Y98
2Y85
laser driver free space communication
Laser-Diode 808
1550 laser diode
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CL67
Abstract: 32MHz quartz RESONATOR 550KQ
Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output
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250mA
500/iA
CL67
32MHz quartz RESONATOR
550KQ
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amd FX PIN LAYOUT
Abstract: G701
Text: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
amd FX PIN LAYOUT
G701
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M6651
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M6651OP/FP LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a sem iconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying
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M6651OP/FP
M66510
120mA
L4403R
M6651
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M 6 6 5 1 O P /F P LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying
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M66510
120mA
b24Tfl2b
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LD-3230
Abstract: iei-1209
Text: VISIBLE LASER DIODE NDL3230SU 30 mW, 685 nm VISIBLE LASER DIODE FOR HIGH DENSITY M AGNETIC OPTICAL DISK APPLICATIONS DESCRIPTION NDL3230 is an A IG alnP visible laser diode and especially developed for high density magnetic optical disk. Higher density than 780 nmLD.
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NDL3230SU
NDL3230
IEI-1209)
ID-3289
LD-3230)
NDL3230
LD-3230
iei-1209
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66510P/FP LASER-DIODE DRIVER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M66510 is a semiconductor laser diode driver that drives a sem iconductor laser of the type w hose cathode and the anode of monitor photodiode are connected to the stem.
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M66510P/FP
M66510
120mA
L4403R
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L5070
Abstract: LS061 L7s00 dl7550
Text: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module
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L7550P
DL7550P
LS061
L5765P1
L5070
L5071
L5775P1
L7s00
dl7550
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor OL3392L_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 1310nm MQW DFB Laser Diode Uncooled Module with Single Mode Fiber DESCRIPTION The OKI OL3392L is a 1310nm DFB Laser Diode in a PCB m ountable coaxial package w ith single mode
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OL3392L_
1310nm
OL3392L
OL3392L
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catv laser predistortion circuit
Abstract: No abstract text available
Text: ! Advance Data Sheet April 1997 microelectronics group Lucent Technologies Bell Labs Innovations A2300-Type Laser 2000 Analog Isolated DFB Laser Module with Predistortion Features • Superior signal quality and system performance compared to present copper-based analog
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A2300-Type
S95-017LW
catv laser predistortion circuit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX8 SERIES InGaAsP — MQW— FP LASER DIODES ML701 B8R,ML725B8F,ML725C8F ML720J8S.ML720K8S TYPE NAME DESCRIPTION FEATURES M L 7 X X 8 series a re In G a A s P s ta b le , s in g le w a v e le n g th tra n s v e r s e of 1310nm laser diodes which provides a
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ML701
ML725B8F
ML725C8F
ML720J8S
ML720K8S
1310nm
ML701B8R
ML725B8F
ML720J8S
ML725C8F
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5723P ELECTRON DEVICE 1 5 50 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP DC-PBH LASER DIODE M ODULE DESCRIPTION N D L 5 7 2 3 P is a 1 550 nm laser diode D IP m odule w ith singlemode fiber and internal therm o-electric cooler. It is designed fo r a
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NDL5723P
FEDL5720P*
NDL5723P*
NDL5731P
L5723P
NDL5735PA--
NDL5730P
14PIN
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Untitled
Abstract: No abstract text available
Text: * SYNERGY LASER DIODE DRIVER WITH INPUT D FLIP-FLOP PRELIMINARY SY100EL1001 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1,25Gb/s operation 75mA peak drive current Separate modulation control Separate master reset for laser safety The SY100EL1001 is a high speed current source for
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SY100EL1001
25Gb/s
16-pin
SY100EL1001
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Untitled
Abstract: No abstract text available
Text: DATA SHEET VISIBLE LASER DIODE N D L 3 2 1 6 7 0 nm BAR CODE READER, PO IN TER A PP LICA TIO N AIGalnP DOUBLE H E T E R O S T R U C T U R E VISIBLE LASER DIO DE DESC R IPTIO N N D L 3210 is an AIGalnP 670 nm visible laser diode and especially developed for Bar Code Reader, Pointer.
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Untitled
Abstract: No abstract text available
Text: SIE D HL1361 AC • MMIbaOS OGllbE? ÖÖT ■ H I T M -Under Development HITACHI/ OPTOELECTRONICS Laser Diode D escription T—41—05 HL1361AC is a 1.3 /¿m InG aA sP distributedfeedback (DFB) laser diode with X/4 phase shifted.
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HL1361
HL1361AC
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NDL5653P
Abstract: NDL5600 NDL5600D NDL5600D1 NDL5604P NDL5650 NDL5650D1 NEC LASER DIODE PIN DIP 10 gb laser diode 5b4 diode
Text: N E C L.2E T> ELECTRONICS INC NEC b4Z7S2S D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE D ES C R IP TIO N N D L5653P is a 1 550 nm phase-shifted DPB Distributed Feed-Back laser diode B utterfly package module with optical isola
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b427S2S
NDL5653P
NDL5653P
incorporates5650
NDL5600D
ndl5650d
NDL5600D1
NDL5650D1
NDL5604P
NDL5654P
NDL5600
NDL5650
NEC LASER DIODE PIN DIP
10 gb laser diode
5b4 diode
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Untitled
Abstract: No abstract text available
Text: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is
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37SM7
NDL5600
b427S2S
b427525
GQ37SS0
NDL5600
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STC25
Abstract: No abstract text available
Text: bEE » • b427S2S ÜD37Sbb fi7G BNECE Z' N E C ELECTRONICS INC / LASER DIODE N D L 5 6 5 0 1 550 nm OPTICAL FIBER COMM UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DESCRIPTION N D L 5 6 5 0 D is a 1 550 nm D F B {Distributed Feed-back laser dio de e specially designed fo r long distance high cap a city transm is
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bME7525
0D375bfi
NDL5650
STC25
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